DD110 Search Results

DD110F160

Abstract: DD110F DD110F120 DD110F40 DD110F80
Contextual Info: DIODE MODULE DD110F/KD110F UL;E76102 （M） Power Diode Module DD110F series are designed for various rectifier circuits. DD110F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

Contextual Info: SANSHA ELECTRIC J1FG CO 37E J> / 7 ^ 1 2 4 3 OQOOIOD 4 H S E M J m DIODE MODULE SanRex P ow er Diode Module DD110F series are designed for various rectifier circuits. DD 110F has tw o diode chips connected in series in 25 mm 1 inch width package and the

U308-U310

Abstract: U310
Contextual Info: IG E SOLI» STATE Dl DE 13fl75Qfll DD110SÖ 5 | 01E 11058 D U308-U310 N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • H ig h P o w e r G ain Ta = 25°C unless otherwise noted Gate-Drain or Gate-Source V o lt a g e . - 2 5 V

Contextual Info: DD110F80 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current110 @Temp (øC) (Test Condition)88# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.3k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)350 @Temp. (øC) (Test Condition)25õ

Contextual Info: DD110F100 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current110 @Temp (øC) (Test Condition)88# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.3k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)350 @Temp. (øC) (Test Condition)25õ

Contextual Info: DD110F160 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current110 @Temp (øC) (Test Condition)88# V(RRM)(V) Rep.Pk.Rev. Voltage1.6k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.3k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)350 @Temp. (øC) (Test Condition)25õ

DD110F160

Abstract: DD110F-160 DD110F DD110F120 DD110F40 DD110F80
Contextual Info: DIODE MODULE DD110F/KD110F UL;E76102 M Power Diode Module DD110F series are designed for various rectifier circuits. DD110F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

Contextual Info: DD110F140 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current110 @Temp (øC) (Test Condition)88# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.3k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)350 @Temp. (øC) (Test Condition)25õ

Contextual Info: TEMPERATURE COMPENSATING CERAMIC DISC CAPACITORS m u H n tn CLASS I PA R T N U M B ERING SYSTEM _ ! DD110 CAPACITOR TYPE AND _ 950 LEAD CONFIG. See lead style chart N150 TEMPERATURE CHARACTERISTICS AND T.C. TOLERANCES Per standard EIA

SD840

Contextual Info: UNITRODE CORP DD1107S 3 f 92D 9 3 4 7 9 6 3 UNITRODE CORP 11075 POWER SCHOTTKY RECTIFIERS D U SD820 U SD 835 U SD 840 U SD 845 24A Pk, up to 45V DESC R IPT IO N The U S D 8 0 0 series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diod e s In

DD110F80

Abstract: DD110F160 DD110F DD110F120 DD110F40 TC88
Contextual Info: DIODE MODULE DD110F/KD110F UL;E76102 （M） Power Diode Module DD110F series are designed for various rectifier circuits. DD110F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

Contextual Info: DD110F20 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current110 @Temp (øC) (Test Condition)88# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.3k V(FM) Max.(V) Forward Voltage1.45 @I(FM) (A) (Test Condition)350 @Temp. (øC) (Test Condition)25õ

Contextual Info: Features • • • • Serial Peripheral Interface SPI Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) NanoPower Operation Low Voltage and Standard Voltage Operation 5.0 (Vcc = 4.5V to 5.5V) 2.7 (Vcc = 2.7V to 5.5V) 1.8 (Vcc = 18V to 3.6V) • 2.1 MHz Clock Rate

87077P

Contextual Info: August 1992 Edition 2.0A FUJITSU DATA SHEET MB87077 6-bit, 4-channel Electronic Volume Controller The Fujitsu M B 87077 is a 6 -bit, 4-channel electronic volume controller. A digital signal input controls gain every 0.5 dB step from OdB to -3 2 d B . It has been fabricated in

DD-59-20BA

Abstract: DE-60-20BA DD110963-5 015-0338-000 DB-59-20BA DC24660-16 DA-59-20BA DC-60-20BA DB-60-20BA DDBMAM50PS
Contextual Info: D Cannon D-Subminiature Accessories Selection Guide Locking Hardware Backshell Style EMI Shielded Snap-Together Metalized Plastic Straight Exit see page 9 EMI Shielded Snap-Together Metalized Plastic 50º Exit see page 9 Female Screw Lock see page 14 Male Screw Lock

001104 203 02

Abstract: DG110 qml-38535 5962-90622
Contextual Info: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET 35 36 37 38 39 40 41 42 43 44 45 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV REV STATUS OF SHEETS SHEET PREPARED BY PMIC N/A DEFENSE ELECTRONICS SUPPLY CENTER

MSB2521

Abstract: 144-GPY2 sds rsl2 BUX 127 5-bf7 67-SD15 BC011 TGS 815 85A7 WD61C96A
Contextual Info: INTRODUCTION WD61C96A 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION 1.1.3 This document describes a single chip VLSI Peripheral Cache Manager, SCSI bus controller, and Disk Controller device, the WD61C96A, for target mode of operation. The WD61C96A is a highly integrated CMOS VLSI device which

SPI-204

Abstract: P-Channel JFETs "P-Channel JFETs" DD11001
Contextual Info: SIPEX CORP S SE D • fl S ö 3 7 1 1 0Q055Efci 4 T-42-21 S P I204 SIGNAL PROCESSING EXCELLENCE HIGH I/O AN A LO G ARRAY WITH JFETS DESCRIPTION The SPI204 Is a high density, high performance analog array containing 428 lin ear bipolar transistors and 16 P-channel JFET transistors as well

32F8120

Abstract: 090AO
Contextual Info: SSI 32F8120 ¿émsvskms Low-Power Programmable Electronic Filter A TDK G roup/C om pany January 1994 DESCRIPTION FEATURES The SSI 32F8120 is a continuous time, low pass filter with programmable bandwidth and high frequency boost. The low pass filter is a 2 zero / 7 pole 0.05° phase

BU2622S

Contextual Info: Audio ICs PLL frequency synthesizer for tuners BU2622S The BU2622S is a PLL frequency synthesizer 1C designed for use in high-fidelity audio systems, car stereos, and CD radio cassettes. Featuring low power consumption, low superfluous radiation, a frequency measurement counter,

Contextual Info: DIODE MODULE DDH0F/KD110F Power Diode Module D D 1 1 OF series are designed for various rectifier circuits. DD 1 1 OF has two diode chips connected in series in 25 mm linch width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

y5p 102k

Abstract: 222Z 250 ERIE CAPACITORS TYPE K
Contextual Info: MEDIUM TO HIGH K CERAMIC DISC CAPACITORS m u H n tn C LA SS II 8c C LA SS III PART N U M B ER IN G SYSTEM 50-100 VD C DD104 CAPACITOR TYPE AND SIZE 950 LEAD CONFIG. See lead style chart Y 5P TEMPERATURE CHARACTERISTICS Temperature range X 5=-55°C to +85°C

DIODE T25 4 Jo

Abstract: DIODE T25 4 bo DIODE T25-4-bo
Contextual Info: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

DE110963

Abstract: m85049/48-2-1f DC24660-16 DD110963-5 DD24661-13 D SUB connector ITT Cannon DE110963-1 D20419 DE44994 DC51222-1
Contextual Info: D sub:Layout 1 3/24/09 12:37 PM Page 1 Inside front cvr & TOC:Layout 1 3/24/09 11:55 AM Page 1 Cannon, VEAM, BIW A Historical Achievement of Technology Leadership Defining and Championing Innovation Showcasing a portfolio of creativity, ITTʼs “Engineered For Life” execution embraces products which have become ubiquitous in a broad collection of markets including: Military/Aerospace, Civil Aircraft, Industrial Instrumentation, Medical, Oil & Gas, Energy, Transportation, Telecom/Handset, Computer, Consumer, and