27 MHZ POWER AMPLIFIER Search Results

Contextual Info: MOTOROLA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8272 • Specified for 128–Channel Performance • Broadband Power Gain  @ f = 40 – 860 MHz Gp = 27 dB (Typ) 27 dB GAIN 860 MHz 128–CHANNEL CATV AMPLIFIER • Broadband Noise Figure

CTB128

Abstract: MHW8272 XMD128
Contextual Info: MOTOROLA Order this document by MHW8272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Line Extender Amplifier MHW8272 • Specified for 128–Channel Performance • Broadband Power Gain  @ f = 40 – 860 MHz Gp = 27 dB (Typ) 27 dB GAIN

Contextual Info: MOTOROLA Order this document by MHW7272/D SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel 750 MHz CATV Line Extender Amplifier MHW7272 • Specified for 110–Channel Performance • Broadband Power Gain  @ f = 40 – 750 MHz Gp = 27 dB (Typ) 27 dB GAIN

Contextual Info: MOTOROLA MHW6272 • Specified for 60– and 77–Channel Performance • Broadband Power Gain  @ f = 40 – 550 MHz Gp = 27 dB Typ 27 dB GAIN 550 MHz 77–CHANNEL CATV AMPLIFIER • Broadband Noise Figure NF = 6 dB (Typ) @ 550 MHz • Superior Gain, Return Loss and DC Current Stability with Temperature

Contextual Info: SPA-180-27-002-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 23 dBm, 27 dB Gain and SMA SPA-180-27-002-SMA is a broadband GaAs PHEMT MMIC-based coaxial power amplifier, operating in the 0.5 to 18 GHz frequency range. The amplifier offers 23

2.1 channel amplifier ckt

Abstract: 4000 watts power amplifier circuit diagram CGB8001 CGB8001-SC CGB8001-SC-0G00 CGB8001-SC-0G0T PB-CGB8001-SC-00A0
Contextual Info: DC-2.8 GHz InGaP HBT 0.5W Medium Power Amplifier October 2008 - Rev 06-Oct-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier

BGD702

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier

BGD702

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: Ultra-Small Ceramic QCN-27+ QCN-27 Power Splitter/Combiner 2 Way-90° 50Ω 1700 to 2700 MHz Maximum Ratings CASE STYLE: FV1206-1 Model Price QCN-27+ $3.95 QCN-27 $3.95 QCN-27D+ $4.45 QCN-27D $4.45 Features Operating Temperature -55°C to 100°C Storage Temperature

Contextual Info: Ultra-Small Ceramic QCN-27+ QCN-27 Power Splitter/Combiner 2 Way-90° 50Ω 1700 to 2700 MHz Maximum Ratings CASE STYLE: FV1206-1 Model Price QCN-27+ $3.95 QCN-27 $3.95 QCN-27D+ $4.45 QCN-27D $4.45 Features Operating Temperature -55°C to 100°C Storage Temperature

Contextual Info: 1 Watt P1dB, 20 MHz to 3 GHz, Medium Power Amplifier, 27 dB Gain, 39 dBm IP3, SMA TECHNICAL DATA SHEET PE15A4017 PE15A4017 is a broadband multi-octave RF 1W power amplifier, operating in the 20 MHz to 3 GHz frequency range. The amplifier offers 30 dBm of P1dB and 27 dB small signal gain, with the excellent gain flatness of ±1.0 dB max, along with an

PA1153

Contextual Info: PA1153 1800 -2000 MHz. Low Noise Linear Power Amplifier Features typical values Low Noise .1.0 dB. High IP3 . 45 dBm. High Gain . 27 dB.

GP 821

Abstract: UTC 1316 cd 14106 UTC 1316 amplifier
Contextual Info: Q UTO/UTC 561 Series Thin-Film Cascadable Amplifier 10 to 500 MHz avan tek FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Output Power: +27 dBm Typ • Temperature Compensated • IF/RF Amplification • Power Output Stage DESCRIPTION

CGB8001-SC

Abstract: CGB8001-SC-0G00 CGB8001-SC-0G0T PB-CGB8001-SC-00A0
Contextual Info: DC-2.7 GHz InGaP HBT Matched Gain Block Amplifier January 2008 - Rev 18-Jan-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

CGB8001-SC

Contextual Info: DC-2.8 GHz InGaP HBT Matched Gain Block Amplifier July 2008 - Rev 16-Jul-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature

Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ ±10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

ACRIAN

Abstract: acrian inc BAM20 BAM20-2 VAM80 acrian B
Contextual Info: GENERAL BAM20 DESCRIPTION 20 WATTS - 27 VOLTS 100-150 MHz.,-. This device is specifically designed for operation in VHF AM power amplifier applications covering the range 100 to 150 MHz. The device incorporates Nichrome resistor stabilization, and provides superior

Contextual Info: PRELIMINARY DATA SHEET SKY65112-84LF: Linear Power Amplifier Driver, 0.5 W 400–2300 MHz Features ● ● ● ● ● Functional Block Diagram Wideband: 400–2300 MHz High linearity: OIP3 > 39 dBm; P1 dB > 27 dBm @ 940 MHz High gain > 18 dB Single DC supply: 5 V

SKY65112-84LF

Contextual Info: PRELIMINARY DATA SHEET SKY65112-84LF: Linear Power Amplifier Driver, 0.5 W 400–2300 MHz Features ● ● ● ● ● Functional Block Diagram Wideband: 400–2300 MHz High linearity: OIP3 > 39 dBm; P1 dB > 27 dBm @ 940 MHz High gain > 18 dB Single DC supply: 5 V

AWB7228

Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

AWB7228P8

Abstract: K 2545 transistor
Contextual Info: AWB7228 2.545 - 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

ETM1

Abstract: AWB7228
Contextual Info: AWB7228 2.62-2.69 GHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 6 10 MHz, +27 dBm • 27 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: ASX415 250 ~ 4000 MHz MMIC Amplifier 4 Features Description  14 dB Gain at 2000 MHz  27 dBm P1dB at 2000 MHz  42 dBm OIP3 at 2000 MHz  ACLR @ WCDMA 4FA: -51 dBc @ Pout = +13 dBm, +/- 5 MHz offset  MTTF > 100 Years  Single Supply The ASX415, a power amplifier MMIC, has a high