26NOV08 Search Results

Contextual Info: 107-68500 Packaging Specification 26Nov08 Rev B AMP-DUAC HOUSING 1. PURPOSE 目的 Define the packaging specifiction and packaging method of AMP-DUAC HOUSING. 订定 AMP-DUAC HOUSING 产品之包装规格及包装方式. 2. APPLICABLE PRODUCT 适用范围

CAT5251

Abstract: CAT5251WI-00 CAT5251WI-50 CAT5251WI-50-T1 CAT5251YI-00 CAT5251YI-50 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50kΩ or 100kΩ „ Potentiometer control and memory access via

JEDEC SMT reflow profile

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: GLASS FILED NYLON FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: - 3'' INCH GOLD -> CONTACT AREA

24V DC motor speed control

Abstract: TMC603 schematic pwm AC "motor control" mosfet motor dc 48v pc based dc motor control using chopper AC Motor Speed Controller TMC603EVAL bldc motor for 48v "Common rail" PWM push button switch
Contextual Info: TMC603EVAL – MANUAL Evaluation board for the TMC603 three phase motor driver with BLDC back EMF commutation hallFX TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features The TMC603 evaluation board makes it possible to evaluate the features of the TMC603 three phase

CAT5401

Abstract: CAT5401WI-00-T1 CAT5401WI-10-T1 CAT5401WI-25-T1 MD2012
Contextual Info: CAT5401 Quad Digitally Programmable Potentiometers DPP with 64 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear taper digitally programmable potentiometers „ 64 resistor taps per potentiometer „ End to end resistance 2.5 kΩ, 10 kΩ, 50 kΩ or

Contextual Info: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name

Contextual Info: WTC2303 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement

Contextual Info: WTC2307 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.0 AMPERS DRAIN SOUCE VOLTAGE -16 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable *Simple Drive Requirement

CAT5401

Abstract: CAT5401WI-00-T1 CAT5401WI-10-T1 CAT5401WI-25-T1 JEDEC MO-013
Contextual Info: CAT5401 Quad Digitally Programmable Potentiometers DPP with 64 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear taper digitally programmable potentiometers „ 64 resistor taps per potentiometer „ End to end resistance 2.5 kΩ, 10 kΩ, 50 kΩ or

16CTU04

Abstract: IRFP250
Contextual Info: 16CTU04PbF Vishay High Power Products Ultrafast Rectifier, 16 A FRED PtTM FEATURES • Ultrafast recovery time Base common cathode 2 • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Lead Pb -free (“PbF” suffix)

TRANSISTOR s838

Abstract: ssd2119 cd 6283 cs single output circuit diagram sdc 7500 pwm control s170 TRANSISTOR sdc 7500 sdc 339 PWM S262 C10 ta 9690 gn transistor marking s728
Contextual Info: Crystalfontz America, Incorporated GRAPHIC TFT MODULE SPECIFICATIONS Crystalfontz Model Number CFAF320240F-T Hardware Version Version A, January 2010 Data Sheet Version Revision 1.1, July 2010 Product Pages

SSD2119

Abstract: TRANSISTOR C 6090 EQUIVALENT SM 630 finger print module code marking s47 m 9630 12 pin zif connector 0.5mm FPC MARKING CODE BB1 CFAF320240F-T TRANSISTOR MARKING CODE S85 s551
Contextual Info: Crystalfontz America, Incorporated GRAPHIC TFT MODULE SPECIFICATIONS Crystalfontz Model Number CFAF320240F-T-TS Hardware Version Version A, January 2010 Data Sheet Version Revision 1.0, July 2010 Product Pages

sdc 7500 pwm control

Abstract: SSD2119 sdc 7500 pwm SSD2119 application note ta 9690 gn sdc 7500 SSD2119Z7 s609 transistor transistor marking s728 sdc 339 PWM
Contextual Info: Crystalfontz America, Incorporated GRAPHIC TFT MODULE SPECIFICATIONS Crystalfontz Model Number CFAF320240F-T Hardware Version Version A, January 2010 Data Sheet Version Revision 1.0, July 2010 Product Pages

EIA-481-2

Contextual Info: Packaging and Shipping Vishay Semiconductors Packaging and Shipping DESCRIPTION The following table lists the number of parts per tube. Solid state relays are available in plastic dual-in-line packages DIP , SOP packages, and in a surface-mount, gullwing, lead bend configuration. SSRs purchased in the

PT2008

Abstract: CAT5259WI-00-T1 SOIC-24 CAT5259 CAT5259WI-00 CAT5259WI-50 CAT5259YI-00 CAT5259YI-50 MS-013
Contextual Info: CAT5259 Quad Digitally Programmable Potentiometers DPP with 256 Taps and I²C Interface FEATURES DESCRIPTION „ Four linear taper digitally programmable potentiometers The CAT5259 is four digitally programmable poten– tiometers (DPPs™) integrated with control logic and

Contextual Info: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<31mΩ @VGS=4.5V RDS(ON)<37mΩ @VGS=2.5V RDS(ON)<47mΩ @VGS=1.8V

CAT5251

Abstract: CAT5251WI-00-T1 CAT5251WI50 CAT5251WI-50-T1 CAT5251YI-00-T2 CAT5251YI-50-T2 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50 kΩ or 100 kΩ „ Potentiometer control and memory access via

Contextual Info: WTC2308 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <160 mΩ@V GS =10V *Rugged and Reliable *Simple Drive Requirement

CAT5251

Abstract: CAT5251WI-00-T1 CAT5251WI50 CAT5251WI-50-T1 CAT5251YI-00-T2 CAT5251YI-50-T2 MS-013
Contextual Info: CAT5251 Quad Digitally Programmable Potentiometer DPP with 256 Taps and SPI Interface FEATURES DESCRIPTION „ Four linear-taper digitally programmable potentiometers „ 254 resistor taps per potentiometer „ End to end resistance 50 kΩ or 100 kΩ „ Potentiometer control and memory access via

Contextual Info: 16CTU04PbF Vishay High Power Products Ultrafast Rectifier, 16 A FRED PtTM FEATURES • Ultrafast recovery time Base common cathode 2 • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Lead Pb -free (“PbF” suffix)

SSD2119

Abstract: Resolution ta 9690 gn SSD2119Z7 SSD2119 application note S945 up 6103 s8 equivalent pin diagram of ic 7489 s937 sj 8227
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD2119 Advance Information 320 RGB x 240 TFT LCD Driver Integrated Power Circuit, Source and Gate Driver and RAM This document contains information on a new product. Specifications and information herein are subject to change

SSD2119

Abstract: S629 sdc 7500 pwm control TRANSISTOR s838 sdc 7500 CFAF320240F-T-TS TRANSISTOR S644 sdc 7500 pwm DB17-DB8 s551
Contextual Info: Crystalfontz America, Incorporated GRAPHIC TFT MODULE SPECIFICATIONS Crystalfontz Model Number CFAF320240F-T Hardware Version Version A, January 2010 Data Sheet Version Revision 1.2, August 2010 Product Pages

Contextual Info: WTC2304 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 2.7 AMPERES DRAIN SOUCE VOLTAGE 25 VOLTAGE P b Lead Pb -Free 1 GATE Features: 2 SOURCE 3 * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V * Rugged and Reliable 1 2

Contextual Info: WTC2305A P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 SOURCE 3 Features: 1 2 *Super High Dense Cell Design For Low R DS ON R DS(ON) <60m Ω@V GS =-10V *Rugged and Reliable *Capable of 2.5V Gate Drive