26MAR2001 Search Results

HCS12

Contextual Info: DOCUMENT NUMBER S12IICV2/D HCS12 Inter-Integrated Circuit IIC Block Guide V02.05 Original Release Date: 08-SEP-1999 Revised: March 7, 2001 Motorola Inc. Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or

serial flash M25P10

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

AI04038

Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (512 Kbit) in 2 s (typical)

bra spec sheet

Contextual Info: TH I S D R A W I NG IS UNPUBL I S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION FOR REV IS IO N S PUBLICATION ALL R IGHTS R E SE R V E D . LTR DESCRIPTION REVISED O DATE EC0-06-007820 06APR2006 DWN sw APVD CR CREW * - 7L O 5 H GREEN

SB220

Abstract: SB230 SB240 SB250 SB260
Contextual Info: LITE-ON SEMICONDUCTOR SB220 thru SB260 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

AN1511

Abstract: M25P05 M25P05-A ST10
Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P05-A in all future designs as described in application note AN1511 .

AN1511

Abstract: M25P10 M25P10-A ST10 serial flash M25P10
Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface NOT FOR NEW DESIGN FEATURES SUMMARY This device is now designated as “Not for New Design”. Please use the M25P10-A in all future designs as described in application note AN1511 .

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Paged Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Paged Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■

SB220

Abstract: SB230 SB240 SB250 SB260
Contextual Info: LITE-ON SEMICONDUCTOR SB220 thru SB260 REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 2.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-15 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

v23612

Contextual Info: 3 THIS C DRAWING IS RELEASED UNPUBLISHED. C O P Y R I G H T 2000 BY TYCO ELECTRONICS FOR C O R P O R A T I O N . AL L PUBLICATION RIGHTS 2000 LOC REV I S I O N S D 1ST QW RESERVED. L TR DESCRIPTION DATE DWN 05APR2001 APVD KM BL 32.5 MMMMMS i_n CX I co o

M25P05

Abstract: ST10
Contextual Info: M25P05 512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (512 Kbit) in 2 s (typical)

serial flash M25P10

Abstract: M25P10 ST10
Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)

Contextual Info: M25P10 1 Mbit, Low Voltage, Serial Paged Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Paged Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)