2621 Search Results

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

44c256

Abstract: 3034C
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output

Video RAM

Abstract: TMS55165
Contextual Info: TMS55165 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS165B-AUGUST1992-flEVISED JANUARY 1993 DGH PACKAGEt TOP VIEW DRAM : 262 144 Words x 16 Bits SAM: 256 Words x 16 Bits Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports

Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A- MARCH 1995 - REVISED JUNE 19BS Military Operating Temperature Range -55 °C to 125°C Performance Ranges: AC CESS AC CESS ACCESS ACCESS TIME TIME TIME TIME ROW COLUM N SER IAL SER IAL ADDRESS EN ABLE

Contextual Info: TMS55160 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS160B-AUGUST1992-REVISED JANUARY 1993 * * * * * DGH PACKAGEt DRAM : 262144 Words x 16 Bits SAM: 256 Words x 16 Bits TOP VIEW Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL8060BC31-09 31 cm 12.1 type , 800 x 600 pixels, 262144 colors, incorporated one lamp/edge-light type backlight DESCRIPTION NL8060BC31-09 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising

W27C020-70

Abstract: W27C020 W27C20-70 IN914 W27C020-12 W27C020-90 W27C020P-12 W27C020P-70 W27C020P-90
Contextual Info: Preliminary W27C020 256K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C020 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 × 8 bits that operates on a single 5 volt power supply. The W27C020

SMJ44C251B

Abstract: 44C251 "Video RAM"
Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A – MARCH 1995 – REVISED JUNE 1995 D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C Performance Ranges: ACCESS TIME ROW ADDRESS MAX ta(R) ’44C251B-10 100 ns ’44C251B-12 120 ns

SGMS056D

Abstract: SMJ55161 "Video RAM" SMJ55161-75
Contextual Info: SMJ55161 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS056D – MAY 1995 – REVISED OCTOBER 1997 D D D D D D D D D D D D D D D Organization: – DRAM: 262 144 by 16 Bits – SAM: 256 by 16 Bits Dual-Port Accessibility – Simultaneous and Asynchronous Access From the DRAM and

SMJ55166

Abstract: SMJ55166-75 SMJ55166-80
Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057C – APRIL 1995 – REVISED JUNE 1997 D D D D D D D D D Organization: – DRAM: 262 144 Words x 16 Bits – SAM: 256 Words × 16 Bits Dual-Port Accessibility – Simultaneous and Asynchronous Access From the DRAM and

Contextual Info: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's

5088A

Abstract: DIP32 LC372100PP SOP32 en-5088
Contextual Info: ¡Ordering number : EN%5088A^ CMOS LSI No. 5088A LC3721OOPP, PM-10/LC3721OOPP, PM-20LV 2 MEG 262144 words x 8 bits Mask ROM internal Clocked Silicon Gate Preliminary Overview The LC372100PP, PM-10 and LC372100PP, PM-20LV are 2097152-bit Mask Programmable Read Only

120T

Abstract: TRF250-120T-B-0.5 RF0014-000
Contextual Info: PRODUCT: TRF250-120T-B-0.5 PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Overcurrent Protection Device Raychem Circuit Protection Products DOCUMENT: SCD 26214 PCN: RF0014-000 REV LETTER: C

Contextual Info: HM6207/HM6207H Series 1-Bit CMOS Static RAM 262144-Word x 1-Bit High Speed CMOS Static RAM The Hitachi HM6207 and HM6207H are high speed 256k static RAMs organized as 256-kword x t-b it. They realize high speed access tim e 25/35/45ns and low power consumption,

Contextual Info: — HM101500 Series Preliminary 262144-Word* x 1-Bit Fully Decoded Random A c ce u Memory • DESCRIPTION HM101500F-15 is ECL 100K compatible, 262144-words by 1-blt, read/write random access memory developed for high speed sys­ tems such as main memories for super computers.

Contextual Info: HM6707A Series 262144-Word x 1-Bit High Speed Static RAM • FEATURES • 262144-words x 1 bit organization • Fully TTL compatible input and output • 1.0/i Hi-BiCMOS process • + 5V single supply • Completely static memory No clock or timing strobe required

HN62444N

Abstract: hn62444
Contextual Info: ADE-203-401A Z HN62444N Series 262144-word x 16-bit/524288-word × 8-bit CMOS Mask Programmable ROM Rev. 1.0 Jun. 20, 1995 The HN62444N is a 4-Mbit CMOS maskprogrammable ROM organized either as 262144 words by 16 bits or as 524288 words by 8 bits. Realizing low power consumption, this memory is

E74889

Abstract: TRF250-120U
Contextual Info: PRODUCT: TRF250-120U PolySwitch PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com DOCUMENT: SCD 26217 REV LETTER: E REV DATE: AUGUST 4, 2010 PAGE NO.: 1 OF 1 Overcurrent Protection Device Raychem Circuit Protection Products

Contextual Info: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

Contextual Info: M ITSU BISHI LSIs MH25636XJ,SXJ-8,-10 FAST PAGE MODE 9437184-BIT 262144-WORD BY 36-BIT DYNAMIC RAM DESCRIPTION MH25636XJ, SXJ is 262144-w ord by 3 6 -b it dynamic RAM module. This consists of two industry standard 256K x 18bit dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package. This

driving point and transfer function

Abstract: TMS55165 TMS55166 "Video RAM" TMS55175 TMS55176 TMS571 X463
Contextual Info: TMS55165, TMS55166, TMS55175, TMS55176 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS463 – DECEMBER 1995 D D D D D D D D D D D Organization: DRAM: 262 144 Words x 16 Bits SAM: 256 Words × 16 Bits Single 5.0-V Power Supply ±10% Dual-Port Accessibility – Simultaneous and

HN27C4096CP

Abstract: HN27C4096CP-12 HN27C4096CP-15 Hitachi DSA00109
Contextual Info: HN27C4096CP Series 262144-word x 16-bit CMOS One Time Programmable ROM The Hitachi HN27C4096CP is a 4-Mbit one time programmable ROM, featuring high speed and low power dissipation. Fabricated on advanced fine process and high speed circuitry technique, the

NL8060AC26-11

Abstract: NL6448AC33-18 DF9-41P-1V DF9-41S-1V ttl 41 pin hirose
Contextual Info: TFT COLOR LCD MODULE NL8060AC26-11 26 cm 10.4 type , 800 x 600 pixels, 262144 colors, incorporated two lamps/edge-light type backlight DESCRIPTION NL8060AC26-11 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising