261 OPTO Search Results

66a hall sensor

Abstract: unipolar stepper motor 12 vdc 7,5 deg equivalent relay to hm 810 PLC based PROJECTS S 261 Hall SMC-26 DCB-261 nema 34 stepper motor amp rj45 chart 1 3362 3
Contextual Info: DCB-261 USERS GUIDE Table of Contents DCB-261 USERS GUIDE Revision date: 03/02/2010 Ad va nc e d M ic r o S ys te ms , I nc . | www. s t e p c o n tr o l. c o m i DCB-261 USERS GUIDE Table of Contents Table of Contents 1 Introduction . 1-1

design opto interrupter

Abstract: MW131 261 opto 0T526
Contextual Info: • bfiD22MS 00D0170 2 * 0 T I OPTO TECHNOLOGY INC 42E » OPTO TECHNOLOGY OPTICAL SWITCH T Y P E OTS 261 Features ■ .035 aperture ■ Photodarlington ■ Low cost ii3 Description H I - 125 Non-contact switching is pro­ vided by Opto Technology’s OTS 261 Interrupter. This unit

Contextual Info: MME D SIEMENS CMPNTS-, OPTO • Û23b32b QQOSlOfl b M S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit 'zm Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and

LD261-4

Abstract: LD261-5 LD269 lfl-10
Contextual Info: SIEMENS CMPNTS-i OPTO 25E D • âS3b3Sb 0G04E3S LD 261 SERIES S IE M E N S IN F R A R E D EMITTER SINGLE AND ARRAYS -40 to +80 Storage Temperature Soldering Temperature Distance from soldering joint FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and

44e 003

Contextual Info: MME D SIEMENS CMPNTSi OPTO • Û23b32b QQOSlQfl b B S I E X SIEM ENS LD 261 SERIES INFRARED EMITTER SINGLE AND ARRAYS T - m -u Package Dimensions in Inches mm Single Unit ^ ]¿ t¿ s Maximum Ratings FEATURES • Low Cost • Miniature Size • Available As Single Unit, LD 261 and

26-48-1026

Contextual Info: 261-2012:QuarkCatalogTempNew 8/27/12 2:27 PM Page 261 2 KK Series PC Board Connectors Breakaway Headers, Right-Angle with Friction Lock, Tin Crimp Terminal Housings, Receptacles with Locking Ramp Only RoHS 3B Mates with 2A, 2B and 2C. Fig. 3B 2B Mates with 1A, 1B and 1C.

FDN86246

Abstract: marking 246
Contextual Info: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description „ Max rDS on = 261 m: at VGS = 10 V, ID = 1.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

LT 7232

Abstract: GHM3045X7R222K-GC FDS6680A 336V 4329 LT1681 LTC1698 MMBT3906LT1 MURS120T3 31264R
Contextual Info: = !48V !"#$%&' *+, ! 261 Kurk Mathews !"48V !"#$%&'()*+,!"#$%&'()*+,- ./01* !"#$%&' ()*+,-"./0 !"#$%&'()*+,-./0123 LT 1681 / LTC®1698 !"#$%&'( !"#$%&'()*+,-.$/012 !"#$%&'()*+,-./0123 !"#$ LT1681 !"#$%&'( )*+, !"#$%LTC1698 !"#$%&'( !"LT1681 !"#$250kHz !

HE8807SG

Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

CIO-MINI37

Abstract: RADIO SHACK PARTS CROSS REF amd9513 GORDOS SOLID STATE RELAY laptop cq 42 MOTHERBOARD VOLTAGE diagram S0833 AD7748 DAS-1600 winbook toshiba ICs cross reference catalog
Contextual Info: ATA ACQUISITION & CONTROL W4 :i' / na/og Volume 6 :f¡ A N EW A G E DAWNS’ ISA to PCM CIA 125 High Street Mansfield, MA 02048 508 261-1123 FAX (508)261-1094 ^ * u j -u a ô u o /a u 0 0 -D A S 0 8 P G H & L C IO -D A SO 8 C IO -D A S 48 » c n a n n e i ZUJS.HZ A / D m > g O ain & 2 C hannels o t 12 B it D /A

Contextual Info: Through Hole Lamp Product Data Sheet LTL-30EHJH96 Spec No.: DS20-2001-261 Effective Date: 10/02/2013 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

eer3016

Abstract: EER3016 transformer ntc 5D-9 2KBP06M2N257 IN4007 diode static resistance FSFM300N ZENER 4148 DATASHEET FSFM260N IN4007 SMD DATA SHEET CHARACTERISTICS DIODE IN4007
Contextual Info: FSFM260N / FSFM261N / FSFM300N Green-Mode Fairchild Power Switch FPS Features Description ! Internal Avalanche-Rugged SenseFET The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power

GHM3045X7R222K-GC

Abstract: planar transformer layout FDS6680A 31264R VJ1825Y155MXB optocoupler Iso1 LT1681 LTC1698 MMBT3906LT1
Contextual Info: advertisement Chip Set Offers Low Cost Alternative to 48V Telecom Modules Design Note 261 Kurk Mathews The demand for high performance 48V input telecom modules has never been higher. The latest generation modules offer high current, high efficiency alternatives to

BPX osram

Abstract: GEOY6021 OHLY0598 OHRD1938 Q65110A3337
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81

OHRD1938

Abstract: BPX osram GEOY6021 Q62703-Q395 Q62703-Q67 LD261-1
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode

Contextual Info: FDN86246 N-Channel PowerTrench MOSFET 150 V, 1.6 A, 261 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.

TOP256

Abstract: top*254 en top258 top253 top261 TOP257 TOP261YN TOP259-261YN TOP256YN TOP254PN
Contextual Info: TOP252-261 TOPSwitch-HX Family ® Enhanced EcoSmart , Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range Product Highlights Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads

2KBP06M2N257

Abstract: FSFM260
Contextual Info: FSFM260N / FSFM261N / FSFM300N Green-Mode Fairchild Power Switch FPS™ Features Description  Internal Avalanche-Rugged SenseFET The FSFM260/261/300 is an integrated Pulse Width Modulator (PWM) and SenseFET specifically designed for high-performance offline Switch Mode Power

GEO06021

Abstract: OHRD1938 Q62703-Q395 Q62703-Q67
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale • GaAs-IR-Lumineszenzdiode • Hohe Zuverlässigkeit • Gruppiert lieferbar • Gehäusegleich mit BPX 81 • Miniatur-Gehäuse Features • GaAs infrared emitting diode • High reliability

BPX osram

Abstract: GEOY6021 OHRD1938 Q62703-Q395 Q62703-Q67
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81 Miniatur-Gehäuse GaAs infrared emitting diode

GEOY6021

Abstract: OHLY0598 OHRD1938 Q65110A3337
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant LD 261 Wesentliche Merkmale Features • • • • • • • • • • GaAs-IR-Lumineszenzdiode Hohe Zuverlässigkeit Gruppiert lieferbar Gehäusegleich mit BPX 81

R-261

Abstract: r260 DIODE
Contextual Info: R-260/261 Series CLAROSTAT Reflective Optical Switches S B B C fiS AND CONTROLS GROUP Features Absolute Maximum Ratings TA = 25°C unless otherwise stated. • • • • • Storage and Operating to +65°C

SFOR3G42

Abstract: SFOR3B42 SFOR3D42 SFOR3J42 I-RTAX 02261 SF0R3J42 SF0R3 TOSHIBA THYRISTOR sfor3g
Contextual Info: 9097250 TOSHIBA - ¿ t w n n Goossbi a | SF0R3J42 600V O T - SS"- &=> 39C 02 261 DISCRETE/OPTO PHASE CONTROL THYRISTOR Unit in mm 0.3A (65.1MAX. MAXIMUM RATINGS C H A R A C T ER IST IC SYM BOL 100 R epetitive Peak O ff-State Voltage SFOR3D42 and Repetitive