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Weidmüller Interface GmbH & Co. KG 2659380000 CB-HTR 140/3,6 BK - Bulk (Alt: 2659380000)
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Burkert Fluid Control Systems 265938 CONTROL HEAD, 8695-00-S2-FA05-E-Y-MP-00-0-0-0-0 , 8695 SERIES*
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Woodhead Molex 130083-0265 (9383-1533) POW-R-MITE IND CABLE REEL; 12/3 SOW; 25 FT; 20A CONNECTOR; 9383-1533
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TE Connectivity 2326593-8 TE Connectivity INSERT HVM HEX LOWER
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Gedore Torque Ltd 2659387 Screw extractor; 64mm; Thread: M8÷M11
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26.5938 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
26.5938 Abstract: 16503 AN609 Contextual Info: SiA778DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia778dj an609 configu091 05-feb-10 +226.5938 16503	PDF
16503 Abstract: AN609 Contextual Info: SiA517DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia517dj an609 configu091 09-apr-09 +116503	PDF
AN609 Contextual Info: SiA511DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sia511dj an609 21-jun-07	PDF
SiA519EDJ Abstract: 16503 AN609 Contextual Info: SiA519EDJ Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia519edj an609 30-jul-09 16503	PDF
AN609 Contextual Info: SiA913DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sia913dj an609 21-jun-07	PDF
74693 Abstract: AN609 Contextual Info: SiA917DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sia917dj an609 09-may-07 74693	PDF
26.5938 Abstract: 16503 AN609 Contextual Info: SiA533EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia533edj an609 29-jan-10 26.5938 +116503	PDF
4164 Abstract: SIA513 16503 AN609 Contextual Info: SiA513EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sia513edj an609 31-mar-09 4164 +2sia513 16503	PDF
transistor c 6073 Abstract: AN609 Contextual Info: SiA914DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sia914dj an609 03-may-07 transistor c 6073	PDF
74692 Abstract: AN609 SiA513DJ Contextual Info: SiA513DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	sia513dj an609 09-may-07 74692	PDF
AN609 Abstract: 20224 Contextual Info: SiA913ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	sia913adj an609 06-feb-09 20224	PDF