25V 1A MOSFET Search Results

HIP1030AS

Abstract: igbt driver
Contextual Info: 39 HIP1030 PRELIMINARY Apni 1994 1A High Side Driver with Overload Protection Description Features • Over Operating Temperature Range -40°C to +125°C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range • Over-Voltage Shutdown Protected

HIP1030

Abstract: HIP1030AS
Contextual Info: HIP1030 S E M I C O N D U C T O R 1A High Side Driver with Overload Protection December 1994 Features Description o o • Over Operating Temperature Range -40 C to +125 C - 1V Max VSAT at 1A - 1A Current Switching Capability - 4.5V to 25V Power Supply Range

Contextual Info: S HIP 1030 ADVANCE INFORMATION 1A High Side Driver With Over-Load Protection May !992 Features Description • Over Operating Range: -40°C to +125°C - 1V Max at 1A Saturation Voltage - 1A Current Switching Capability - 4.5V to 25V Power Supply Range The HIP1030 is a Power Integrated Circuit designed as a

Contextual Info: A Product Line of Diodes Incorporated Green FZT789A 25V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -25V IC = -3A high Continuous Current Low saturation voltage VCE sat < -250mV @ -1A

C3225X5R1C476M

Abstract: SMD Transistor 070 R AC adapter 19V liteon smd transistor ea 1P smd transistor transistor smd 12p transistor 12p smd schematic liteon adapter notebook EA Q4 SMD transistor transistor panasonic vertical preset 10k
Contextual Info: ISL85001EVAL1Z: 1A Regulator Standard Buck PWM Application Note December 1, 2008 AN1443.0 Description Recommended Equipment The ISL85001EVAL1Z REV A kit is intended for use by individuals with requirements for Point-of-Load applications sourcing from 4.5V to 25V. The ISL85001EVAL1Z evaluation

ZXTN649FTA

Abstract: zxtn649 T-23 ZXTN649F ZXTP749F
Contextual Info: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ

Contextual Info: A Product Line of Diodes Incorporated ZXTN649F N PN L OW V C E s a t TRANSISTOR IN SO T-23 Mechanical Data Features • • • • • • • • • • • BVCEO > 25V BVCBO > 35V IC(cont) = 3A Continuous Currrent VCE(sat) < 120mV @ 1A RCE(sat) = 77 mΩ

ZXTP749FTA

Abstract: sot-23 Marking 1N8 T-23 ZXTN649F ZXTP749F marking mv sot23 n channel mosfet 1N8 transistor sot23 zxtp749 t-23 p channel mosfet
Contextual Info: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A

transistor T23

Contextual Info: A Product Line of Diodes Incorporated ZXTP749F P N P L O W V C E s a t TRANSISTOR IN SO T-23 Features • • • • • • • • • • • Mechanical Data • • • • • • BVCEO > -25V BVCBO > -35V IC(cont) = -3A Continuous Currrent VCE(sat) < -150mV @ -1A

IR7303

Abstract: electrolytic capacitor 1uF 25v 220uf, 25v electrolytic capacitor 220uf/25V capacitor c1 220uF CDRH127-330 SI9936 resistor 330 Ohm capacitor 1uF 25V 220uF, 25V
Contextual Info: TFT Monitor 10V to 20V INPUT C2 1uF 10V 9 R1 20k 2 D1 CMPSH-3 16 VP 15 VL BST ILIM COMP DH C1 27nF 14 13 12 LX DL VL GND C4 220uF 25V HC 11 C3 0.1uF R3 10 R4 10 OUT 1 POK 10 FB2 B3 C11 220uF 10V MV-AX R5 30.9k C6 4.7nF B2 5V@1A 3 4 FB 127-330 N1 1/2 Si9936

P-channel Dual MOSFET VGS -25V

Abstract: b 1624 transistor P-channel MOSFET VGS -25V
Contextual Info: 0 OPTEK Product Bulletin HCT802 May 1993 Dual Enhancement Mode MOSFET Type HCT802 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

VN0109N5

Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109
Contextual Info: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an

Contextual Info: @.OBIEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package • V ds = 90V • lD o n N-Channel = 1.9A P-Channel = 0.5A • Two devices selected for V ds, switching time, and capacitance

HCT801

Abstract: HCT801TX HCT802 VN0109 VP0109 TRANSISTOR BI 185
Contextual Info: @ . OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source Voltage. 90V

Contextual Info: WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON)

IN4007

Abstract: SD4843P SD4843 IN4007 DC IN4007 5A sd484 222M 1kv SD484X SD484XP67K65 SA431A
Contextual Info: SD484XP67K65 EKSD484XP67K65_01_V1.4 SD484X P67K65 85 265V 15W SD484XP67K65_AN01 EK01_V1.4 7.2W 12W 14W 18W 80 SD484XP67K65 PWM 650V MOSFET SD484XP67K65 MOSFET 16.8 4.8 9.6 6.0 3.6 0.6 A 0.75 A 0.90 A 1.20 A 1.50A 68x35.5×1.5 mm3 EKSD484XP_01_V1.4 SD484XP67K65

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

2N7336

Abstract: IRFG6110
Contextual Info: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)

HCT801TX

Abstract: Dual Enhancement Mode MOSFET
Contextual Info: 0 OPTEK Product Bulletin HCT801 May 1993 Dual Enhancement Mode MOSFET Type HCT801 Features Absolute Maximum Ratings • 6 pad surface mount package Drain-Source

Contextual Info: 2N7336 IRFG6110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N & P CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) BVDSS 0.457 ± 0.102 (0.018 ± 0.004) 2.134 (0.084)

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters

AP2318GEN

Contextual Info: AP2318GEN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive D ▼ Small outline package ▼ RoHS Compliant BVDSS 30V RDS ON 720mΩ ID 1A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to

Contextual Info: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters