25R1 Search Results

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F12-25R12KT4G   IGBT,逆变器/IGBT,Inverter

F12-25R12K

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F12-25R12KT4G   IGBT,Wechselrichter/IGBT,Inverter

F4-25R12NS4

Contextual Info: Technische Information / technical information F4-25R12NS4 IGBT-Module IGBT-modules EconoPACK 1 mit schnellem IGBT2 für hochfrequentes Schalten als H-Brückenkonfiguration EconoPACK™1 module with fast IGBT2 for high switching frequency as H-bridge configuration

F12-25R12KT4G

Abstract: F12-25R12K
Contextual Info: Technische Information / technical information F12-25R12KT4G IGBT-Module IGBT-modules EconoPACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK™3 module with trench/fieldstop IGBT4 and Emitter Controlled4 Diode IGBT-Wechselrichter / IGBT-inverter

DSI-25R1

Abstract: 1MPE
Contextual Info: 25mm Square Isolator CAT-236 Model No. DSI-25R1.500G • Spec i f ico t ions Frequency 1478 Band Wi d t h Ful I I n s e r t i on L o s s 0.4 I s o l o t i on 20 V.S.W.R 1.20 Hand I i ng P o we r 50 W max Refrection 10 W max O p e r o t i ng P o we r Temp.

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F12-25R12KT4G  

Contextual Info: TPC8228-H MOSFET シリコンNチャネルMOS形 U-MOS-H TPC8228-H 1. 用途 • DC-DCコンバータ用 • CCFLインバータ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。 (3) ゲート入力電荷量が小さい。: QSW = 2.6 nC (標準)

Contextual Info: TP89R103NL MOSFET シリコンNチャネルMOS形 U-MOS-H TP89R103NL 1. 用途 • スイッチングレギュレータ用 • DC-DCコンバータ用 2. 特長 (1) スイッチングスピードが速い。 (2) ゲート入力電荷量が小さい。: QSW = 2.5 nC (標準)

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

Contextual Info: Precision Thin Film Precision Surface Nichrome Chip Resistors Mount Resistors PCF Series Series thin film technology •PCF Precision · Precision Extended ohmic 1R - 3M metal range film technology · Extended Precision toohmic ±0.01% and 5ppm/°C range 1R - 3M

Contextual Info: TPC8065-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8065-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.)

TPC8125

Abstract: mpf245
Contextual Info: TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅥ TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.)

TPC8061

Abstract: TPC8061-H 25R1A
Contextual Info: TPC8061-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅥ-H TPC8061-H ○ 高効率 DC-DC コンバータ用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 小型, 薄型で実装面積が小さい。 • スイッチングスピードが速い。

Contextual Info: TPC8066-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8066-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.2 nC (typ.)

Contextual Info: TPC8129 MOSFETs Silicon P-Channel MOS U-MOS TPC8129 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V)

Contextual Info: TPC8228-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8228-H 1. Applications • DC-DC Converters • CCFL Inverters 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 2.6 nC (typ.) (4) (5) (6) Low drain-source on-resistance: RDS(ON) = 38 mΩ (typ.)

Contextual Info: TPC8133 MOSFETs Silicon P-Channel MOS U-MOS TPC8133 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = -10 V)

Contextual Info: TPC8067-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8067-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.)

Contextual Info: TPC8407 MOSFETs Silicon P-/N-Channel MOS U-MOS/U-MOS-H TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance

Contextual Info: TPC8065-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8065-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.)

TPC82

Contextual Info: TPC8229-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8229-H 1. Applications • DC-DC Converters • CCFL Inverters 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)

a2633

Abstract: TPC8067-H SOP 812
Contextual Info: TPC8067-H MOSFET シリコンNチャネルMOS形 U-MOS-H TPC8067-H 1. 用途 • 高効率DC-DCコンバータ用 • ノートブックPC用 • 携帯電子機器用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。

TPC8066-H

Contextual Info: TPC8066-H MOSFET シリコンNチャネルMOS形 U-MOS-H TPC8066-H 1. 用途 • 高効率DC-DCコンバータ用 • ノートブックPC用 • 携帯電子機器用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。

TPC8067-H

Abstract: a2633
Contextual Info: TPC8067-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8067-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 1.9 nC (typ.)