TPC82 Search Results

Contextual Info: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)

Contextual Info: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance

Contextual Info: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Unit: mm Small footprint due to small and thin package z Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)

TPC8207

Abstract: A1930
Contextual Info: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

TPC8214-H

Abstract: TPC8214
Contextual Info: TPC8214-H 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSIII TPC8214-H ○ 高効率 DC／DC コンバータ用 ○ CCFL インバータ用 • 小型薄型で実装面積が小さい。 • スイッチングスピードが速い。

tpc8213

Abstract: TPC8213-H TPC82
Contextual Info: TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8213-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications • Small footprint due to small and thin package

Contextual Info: TPC8228-H MOSFET シリコンNチャネルMOS形 U-MOS-H TPC8228-H 1. 用途 • DC-DCコンバータ用 • CCFLインバータ用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2) スイッチングスピードが速い。 (3) ゲート入力電荷量が小さい。: QSW = 2.6 nC (標準)

Contextual Info: TOSHIBA TPC8204 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8204 LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8, 8 5 n n n n Low Drain-Source ON Resistance

Contextual Info: TO SHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR t p t SILICON N CHANNEL MOS TYPE tt-MOSVI f t ? n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : R ü g (ON) —41m n (Typ.)

TPC8212-H

Abstract: TPC8212
Contextual Info: TPC8212-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8212-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package

A1930

Abstract: TPC8207
Contextual Info: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

TPC8201

Abstract: cha marking code
Contextual Info: TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π •MOSVI TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) l High forward transfer admittance

Contextual Info: TPC8228-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8228-H 1. Applications • DC-DC Converters • CCFL Inverters 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 2.6 nC (typ.) (4) (5) (6) Low drain-source on-resistance: RDS(ON) = 38 mΩ (typ.)

TPC82

Contextual Info: TPC8229-H MOSFETs Silicon N-Channel MOS U-MOS-H TPC8229-H 1. Applications • DC-DC Converters • CCFL Inverters 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)

Contextual Info: TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC8206 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)

Contextual Info: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Small footprint due to small thin package. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)

Contextual Info: TPC8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain−source ON resistance : RDS (ON) = 37 mΩ (typ.) High forward transfer admittance

TPC8203

Contextual Info: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance

Contextual Info: TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII TPC8206 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)

TPC8208

Contextual Info: TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8208 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)

Contextual Info: TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain−source ON resistance

TPC8210

Contextual Info: TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS III TPC8210 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.) l High forward transfer admittance: |Yfs| = 13 S (typ.)

TPC8209

Contextual Info: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)

TPC150A

Contextual Info: 7 1 C d J TTETSB? GOGMflTb T W'iJ'-fl-iS G S-^THOMSON THOMSON SEMICONDUCTORS _ trisil XP telephone protection •r m Type* P = 15 W / TPC62A TPC62B TPC68A TPC 68B TPC75A TPC75B TPC82A TPC82B TPC 91A TPC 91B TPC100A TPC100B TPC110A TPC HOB