25Q 328 Search Results

2253A

Abstract: 25Q 328
Contextual Info: QSFCT153T, 253T, 2153T, 2253T High Speed CMOS \ M , Dual 4 Input Mulitplexers Q QS54/74FCT253T QS54/74FCT2153T QS54/74FCT2253T r FEATURES/BENEFITS • Pin and function compatible to the 74F153/253 74FCT153/253 and 74FCT153T/253T • CMOS power levels: <7.5 mW static

25Q 328

Contextual Info: r NOTES: 0 MAT ' L : ir.oot F HE N O . BB- CD -20 5 - 0 2 .031 COPPER S TOC K TK N . - y g PLATING : ELECTRO-TIN ( .0 0 0 3 MIN. INSULATION MOLDED PVC (BLUE) STUD S IZ E S :(-.005) 02 - .094 04 = .119 06 = .146 . 08 = .173 10 = .198 14 = .265 vU L LISTING E 32244

11CX11B-D01

Abstract: 12CX 25Q 328
Contextual Info: CATALO G MICRO SWITCH SWITCH - a Honeywell Division FED. MFG. CODE LISTING CONVERSION CHART 11CX 12CX ENCLOSED 0,05 7,29 7,92 8,33 8,5 9,4 9,5 12,7 17,8 18,3 20,3 2 5,4 29,5*1,5 32,0 4 0,0 50,8 60,3 5 80,0 96.0 98.0 101,6 104.0 0 .5 0 Nm 1,13 Kq SERIES CHART 7

Contextual Info: QuickSwitch Products QS386 i High-Speed CMOS 10-Bit Bus Switch With Flow-Thru Pinout QS32861 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • bidirectional switches connect inputs to outputs • Zero propagation delay 3861 , zero ground

smd transistor marking code D13

Contextual Info: BSP 373 I nf ineon technologie» SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated •^GS .h =2-1 •4 0 V Type Vbs b B DS(on) Package Marking BSP 373 100 V 1.7 A 0.3 n SOT-223 BSP 373 Type BSP 373 Ordering Code Q67000-S301

Contextual Info: S e m i c I u c t o r I nc QuickSwitch Products . High-Speed CMOS « o fS « ADVANCE 1 ° - B it BUS S w itG h W it h INFORMATION QS32862 Active High and Low Enables FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc •

178 12T 741

Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Data Sheet 200 Mb/s 64 x 64 Crosspoint Switch VSC864A-2 Features • 200 Mb/s Operation • Power Dissipation: 9.4 Watts Typ. • Duty-cycle Distortion: < 10% • Single Power Supply: -2 V ± 5% • Clocked or Flow-through Operation

Intermediate frequency transformer 455

Abstract: Mullard
Contextual Info: DISC SEA L TR IO D E TD2-400A Application: R.F. oscillator, amplifier or frequency multiplier. Power output: 600VV at f=470M c/s. Frequency: 470Mc/s at fu ll ratings, 900Mc/s at reduced ratings. Construction: Disc seal, ceramic envelope, forced-air cooled.

2253A

Abstract: 253T
Contextual Info: QSFCT153T, 253T, 2153T, 2253T H ig h S p e e d C M O S D ual 4 In p u t Q qs54/74fctis 3t q s 54/74 f c t 253 t M u litp le x e rs QS54/74FCT2153T QS54/74FCT2253T FEATURES/BENEFITS • • • • Pin and function compatible to the 74F153/253 74FCT153/253 and 74FCT153T/253T

Contextual Info: Tg] QuickSwitch Products High-Speed CMOS ßUS Switch With Active High and Low Enables fà Semiconductor, I nc . advance INFORMATION FEATURES/BENEFITS DESCRIPTION • The QS3862 and QS32862 each provide a set of ten high speed CMOS, TTL Compatible bus switches.

Contextual Info: FSL23A4D, FSL23A4R 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, rDS ON = 0.480SJ The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for com mercial and m ilitary space

Contextual Info: Lattice I• • GAL22V10 High Perform ance E2CM O S PLD G eneric A rray Logic J Semiconductor • Corporation FU N C TIO N AL B LO C K DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOG Y — 5 ns Maxim um Propagation Delay — Fmax = 200 MHz — 4 ns Maxim um from Clock Input to Data Output

Contextual Info: FSL23A4D, FSL23A4R Semiconductor 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 250V, ros ON = 0-480S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: APPLICATION NOTE - AWT0908 AWT0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows

Contextual Info: VITESSE VSC864A-2 Data Sheet 200 Mb/s 64 x 64 Crosspoint Switch Features • 200 Mb/s Operation • Power Dissipation: 9.4 Watts Typ. • Duty-cycle Distortion: < 10% • Single Power Supply: -2 V ± 5% • Clocked or Flow-through Operation • Commercial (0° to +70° C) or Industrial

Contextual Info: advanced . interconnections Single - Turret Standoffs 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 - TWX 9102403454 EMCTroduct "STS" Series T G T F Plating: i -14: -T THRU HOLE -4: h- E 1 -17: h D -52: 400p" Tin term inal,

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

25Q 328

Contextual Info: Preliminary Data Sheet September 1996 m i c r o e l e c t r o n i c s gr oup Lucent Technologies Bell Labs Innovations ATTL7551 Low-Power SLIC Features Description • Low active power typical 115 mW during on-hook transmission This electronic subscriber loop interface circuit

Avantek amplifier

Abstract: transistor tt 2206 TT 2206 Avantek, Inc. GPD 35C05 LMM 2057 GPD-201 Avantek rf amplifier GPD-1001 GPD-405 GPD-331
Contextual Info: AVANTEK INC EOE O a v a n tek D • i m i l t t 0QQ7343 Selection G uide 4 GPD Series PRODUCT DESCRIPTION The GPD and G PM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are designed for applications which require the highest performance-to-cost ratio or where size is

AVAGO DATE CODE MARKING

Abstract: transistor EFT 377 B MPS430F1222IPW ADNS-7530 transistor EFT 213
Contextual Info: ADNS-7530 Integrated molded lead-frame DIP Sensor Data Sheet Theory of Operation Features The ADNS-7530 integrated molded lead-frame DIP sensor comprises of sensor and VCSEL in a single package. • Wide operating voltage: 2.7V-3.6V The advanced class of VCSEL was engineered by Avago

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

MIL-T-55155

Abstract: ali 3329 ali m 3329 BA 5979 5740-14 SE181 SE191D01 57b9 MZ-157 EMC 8200 E
Contextual Info: Single - Turret Standoffs ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 •TWX 9102403454 EMC*Product "STS" Series Plating: 400p" Tin terminal, 200|i" Cadm ium Chrom ate base/eyelet

EN25Q128

Contextual Info: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation

EN25Q128

Abstract: cFeon* SPI Flash EN25 C20F Dual Output fast
Contextual Info: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation