25NOV04 Search Results

Contextual Info: APS00B MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS MAGNETIC FLUX ROTATION -q SUPPLY VOLTAGE +q #12V POWER DISSIPATION 200mW TEMPERATURE -55 TO 150C CHARACTERISTICS @ 25C & 5V UNLESS OTHERWISE STATED 0.193 0.189 0.050 0,0 MIN SUPPLY VOLTAGE TEMPERATURE 0.016

M48T59Y-70PC1D

Contextual Info: M48T59 M48T59Y, M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, AND BATTERY FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION

BF964

Abstract: BF964SA BF964S BF964SB TO50 package
Contextual Info: BF964S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance

BF966SA

Abstract: BF966S BF966 BF966SB TO50 package MA1300
Contextual Info: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance

BF961

Abstract: TO50 package BF961A BF961B
Contextual Info: BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance

evi 330

Contextual Info: MOUNTING DIMENSIONS ABSOLUTE MAXIMUM RATINGS SUPPLY P OWE R VOLTAGE db 1 2 V DISSIPATION 2 0 OmW TEMPERATURE -55 TO 1500 CHARACTERISTICS * 25C & 5V UNLESS OTHERWISE STATED M 1N SUPPLY VOLTAGE MAX 5 TEMPERATURE BRIDGE TYP 50. 0 C .6 K OHMS 0. 9 .25 MA X O U T P U T A M P L I T U D E

BF988A

Abstract: BF988 BF988B TO50 package
Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance

M48T59

Abstract: M48T59V M48T59Y M4T28-BR12SH M4T32-BR12SH SOH28
Contextual Info: M48T59 M48T59Y, M48T59V* 5.0 or 3.3V, 64 Kbit 8 Kbit x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, AND BATTERY FREQUENCY TEST OUTPUT FOR REAL TIME CLOCK SOFTWARE CALIBRATION