25KGF Search Results

Contextual Info: 1 取付間隔について コンデンサの取付間隔は放熱や保安装置の動作を考慮して決められてます。 並列使用時の標準取付間隔はケース奥行寸法（b 寸法）毎に次の通りにしてください。 ●ブリキ（黄銅）ケース

Contextual Info: DIODE MODULE F.R.D. FRS200BA F R S 2 0 0 B A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • High Speed t r r ^ 100ns

MBM400JS6AW

Abstract: PC1470 Hitachi DSA0047
Contextual Info: IGBT MODU ODULE MBM400JS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 E2 15 27 48 62 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD .

Contextual Info: 57832-5000 1.0 I/O 120P WIRING TOOL PRODUCT SPECIFICATION ATP-57832-5000E 2005/05/30, Rev.- C Molex Japan Co., Ltd. 1. Description This tool is a manual-wiring tool that is used to arrange the wire of I/O cable into the upper cover as the pre-work of the termination of 1.0 I/O 120P cable assembly of Molex.

mbn1200gs12aw

Abstract: fast recovery diode 600v 1200A
Contextual Info: IGBT MODU ODULE MBN1200GS12AW OUTLINE DRAWING 130 110 2-M4 * High speed and low saturation voltage. G 46.75 * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . Unit in mm E 110 19.5 27.5 FEAT EATURES RES 4-φ6.5 E 130 Silicon N-channel IGBT

Contextual Info: IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES 4-φ6.5 * High speed and low saturation voltage. 3-M6 108 93 18 20 4-Fast-on Terminal #110 20 C2E1 G2 * low noise due to built-in free-wheeling 15 27 48 62 E2 diode - ultra soft fast recovery diode USFD .

Contextual Info: SANSHA ELECTRIC MFG CO 37E D H 7 ^ 1 2 4 3 QQDDD77 5 H S E M J ;. ~Q DIODE MODULE SanRex Power Diode Module D F60B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor

MBM300GS12AW

Abstract: MBM300GS12A 9V DC INPUT and gate ic Hitachi DSA00118 MBM300GS12
Contextual Info: IGBT MODU ODULE MBM300GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . * Isolated head sink (terminal to base).

schematic welding inverters

Abstract: 2RI250E 5000AIL
Contextual Info: 2 R I2 5 0 E 2 x 250A If t —Jls rj-— • g ± s i r7 - :£ ì > 3 . — )\, : Outline Drawings P O W E R D IO D E M O D U L E 20.0 20.0 r 20. 0 20.0 3*6.5 o'" - U I Features 131.0 • Large Capacitance • WOfflb Insulated Type • I 25.0_ |_ Easy Connection

FRFM-501LD104KE1A0

Abstract: FRFN-251LV104KC4A0 DCR2-22A25 FDFDD631U104KDADZ0 RFM2H104KD FFALN251AU355UF0AA RFN2E473K EVN40M205UL FRFM-401LD504KBBA3 RFM2E145KPD
Contextual Info: フィルムコンデンサ CAT.No.1003O 目 次 製品検索 製品一覧表 使用上の注意 品番の表し方 製品ガイド 自動挿入用テーピング仕様 最小梱包単位 温度特性 TACEシリーズ（高周波用） TACDシリーズ（高周波用）

Contextual Info: D IO D E M O D U L E f .R.d . FDF60BA40/60 Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed

Contextual Info: FCA100AA10 ^ V advance MOSFET MODULE FCA100AA10 UL;E76102 M F C A 1 OOAA is a dual power MOSFET module designed for fast switching applications of low voltage and high current. (2 devices are Separated.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink con­

DIODE A93

Abstract: 251C FDF60BA 5210s TI-251
Contextual Info: DIODE M ODULE F.R.D. FDF60BA40/60 UL;E76102(M ) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed

FDF60BA

Abstract: H125 73b diode
Contextual Info: DIODE MODULE FR D. FDF60BA Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed

MBN600GS12AW

Abstract: 180Arms
Contextual Info: IGBT MODU ODULE MBN600GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 110 93 4-φ6.5 FEAT EATURES RES 2-M8 E * High speed and low saturation voltage. C 80 62 40 E * low noise due to built-in free-wheeling G diode - ultra soft fast recovery diode USFD .

B92 02 diode

Abstract: B91 02 diode b92 diode DIODE B91 FRS200AA FRS200AA60 SANSHA FRS200AA40 H150 B91 diode
Contextual Info: 7^12143 0G0G475 412 « S E M J SANSMA ELECTRIC MFG CO SbE D DIODE MODULE f .R . d . FRS200AA40/60 F R S 2 0 0 A A is a high speed isolated diode module designed for high power switching application. F R S 2 0 0 A A is suitable for high frequency application requiring low loss and high speed control.

ETON

Abstract: MBN400GS12AW switching 2000w
Contextual Info: IGBT MODU ODULE MBN400GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode USFD . * Isolated head sink (terminal to base).

Contextual Info: N F S E R IE S RFco•AXIAL CONNECTORS C15 type connectors for satellite broadcasting Overview C 1 5 typ e connectors fo r satellite broadcasting our company's N F series conform w ith the specifications o f Technical Standards R C Z -6 0 1 5 o f the Electronic Industries

Contextual Info: SA N S H A ELECTRIC MFG CO 37E 7TR1E43 D QQ00071 1 i SEN J _T z'i'cn DIODE MODULE SanRex Pow er Diode Module D F 40 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor

Contextual Info: DIODE MODULE f .r .d . FRN300BA F R N 3 0 0 B A is a high speed isolated diode module designed for high power switching application. F R N 3 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • High Speed trrS 100ns

250R16B

Contextual Info: 2 R I 1 5 E 2 x i 5 0 a M J iH 'S i : Outline Drawings P O W E R D IO D E M O D U L E 20.0 20.0 , .20.0 .20 0, 3-^6.5 Ü œ JS2 : Features 31 -0 • :* ;§ # Large Capacitance • Sfefltfli Insulated Type • -53-ffi3!!<7>/=it>i2lfcA’r&#!i • Jl •

Contextual Info: 4R3TI30Y-080 k »i m S ± / < 7 - ;ES>a.-;U u x » a t e g s ? 3 . - ju DIODE and TYRISTOR MODULE : Features —*> 3 / - f G l a s s Passivation Chip • • Easy Connection • Insulated Type • d i/d t flit 0 * * 3 I ' Large d i/d t • d v /d t Large d v /d t

TIL100

Abstract: 4R3TI60Y-080 P460 T151 T810
Contextual Info: 4R3TI60Y-080 g à E ffl ? y = t- K « 1 M : Outline Drawings ' DIODE and TYRISTOR MODULE : Features • I S ? X '< '>*< — '> 3 • ~f Glass Passivation Chip Easy Connection • Insulated Type • d i/d ti- fS # 1 ' ; * ^ v.' • d v /d t Gl. G?, G3, K)a

2RI250E

Abstract: T151 T460 T810 cf 005
Contextual Info: 2 R I2 5 0 E 2 x 250A rj-— • g ± s i r7 - :£ ì> 3 .— )\ , If t —Jls : Outline Drawings POWER DIODE MODULE I Features Large Capacitance • WOfflb Insulated Type • 131.0 I 25.0_|_ 3B.0 . [«¡.0 _31.C 68.5 Easy Connection •#7 —v 3 fl-M8(Hexagon Bnlt and Washer Assemblies)