00D1S23 Search Results

acrian RF POWER TRANSISTOR

Abstract: F627-8Q1 F627-8-Q1 VTV-150-4 ACRIAN sje transistor VTV075 VTV150 VTV-150 VTV-150-3
Contextual Info: • m r s -é à -^ T S T N c -^ r ^ r io ia a -iiB DDD1S5G a | « m m p w GENERAL m h -v m m m m m «nn*n« w «h » n m m m r m m p h r i m m b m h m □ 7“-> T -7 J AN ■ VTV-150 DESCRIPTION The VTV -1 5 0 is a silicon NPN transistor designed for broadcast

Contextual Info: D IO D E M O D U L E f .R.d . FDF60BA40/60 Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed

DIODE A93

Abstract: 251C FDF60BA 5210s TI-251
Contextual Info: DIODE M ODULE F.R.D. FDF60BA40/60 UL;E76102(M ) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed

Contextual Info: AP E X mCROTECHNOLOGY P i=V“ . CORP b?E J> Qfl7flb3b 0001520 T3T H A U T ._ >u PAI2 • PA12A A P E X M ICROTECH NOLOG Y CORPORATION • APPLICATIONS HOTLINE 8 0 0 5 46-A P EX 80 0-54 6-27 3 9 FEATURES • • • • • • LOW THERMAL RESISTANCE — 1.4 C/W