25JUN12 Search Results
25JUN12 Datasheets Context Search
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2600 MHz 4.7 VDC 2900 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +5.0 +8.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic : |
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10kHz 100kHz CVCO55BE-2600-2900 25-Jun-12 | |
Contextual Info: SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses |
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J-STD-020, DO-220AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration |
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SQ9945BEY AEC-Q101 SQ9945BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si4190ADY
Abstract: si41
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Si4190ADY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si41 | |
Contextual Info: SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses |
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J-STD-020, DO-220AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
62639Contextual Info: SiS472ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiS472ADN AN609, 2962u 4146u 8244m 3748m 3513m 5716m 8642m 25-Jun-12 62639 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2650 MHz 7.5 VDC 2700 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +4.0 +6.0 +8.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic : |
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10kHz 100kHz CVCO55BE-2650-2700 25-Jun-12 | |
Contextual Info: VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current |
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VS-30CTH03PbF, VS-30CTH03-N3 O-220AB JEDEC-JESD47 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: REVISIONS THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES: BODY - ZINC DIE CAST, NICKEL PLATING CONTACT - PHOSPHOR BRONZE, GOLD PLATING .000003 THICK @ CONTACT AREA ONLY, TIN PLATING AT TAIL, NICKEL PLATED OVERALL INSULATOR - POLYPROPYLENE HOUSING - PBT 15% G.F. , WHITE |
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MIN/15 MIL-STD-348 25-Jun-12 | |
Contextual Info: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYR IG H T - R EVIS IO NS - , - A LL RIG HTS R ESER VED . By - DIRRRCGRIC ,000035-,000065 GGGD PR PGR M IR-G-45G 04 GVOR ,000145-,000275 NICKGG PR POR AM S-Q Q -N -290 NXA O-RING 000050- 000100 GGGD PR |
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ASGMA583, ASGM-D-1710 C17300, IG-R-35988, IR-G-45G 25JUN12 FEB2009 12FEB | |
vcnl 3020
Abstract: VCNL3020 VCNL4020 VCNL3020GS08
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VCNL3020 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vcnl 3020 VCNL3020 VCNL4020 VCNL3020GS08 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2495 MHz 4.5 VDC 2625 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm 25 mA Pushing: 1.0 MHz/V |
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10kHz 100kHz CVCO55BE-2495-2625 25-Jun-12 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2186 MHz 4.5 VDC 2250 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +3.0 +5.0 +7.0 dBm 20 35 mA Harmonic Suppression 2 Harmonic : |
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10kHz 100kHz CVCO55CC-2186-2250 25-Jun-12 | |
Contextual Info: VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current |
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VS-30CTH03PbF, VS-30CTH03-N3 O-220AB JEDEC-JESD47 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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30Q10
Abstract: IHLP1616BZ-11 IHLP-1616BZ-11 IHLP-1616BZ
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IHLP-1616BZ-11 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 30Q10 IHLP1616BZ-11 IHLP-1616BZ-11 IHLP-1616BZ | |
week code SILICONIXContextual Info: Part Marking Information www.vishay.com Vishay Siliconix DEVICES: PowerPAK SO-8 PowerPAK SO-8L PowerPAK 1212-8 PowerPAIR® 6 x 3.7 PowerPAK 1212-8S PowerPAIR 6 x 5 PowerPAIR 3 x 3 Single and Dual 7401 LL TYWF 7401 = Example Base Part Number or marking codea |
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1212-8S 25-Jun-12 week code SILICONIX | |
PowerPAK 1212-8
Abstract: 1212-8S
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1212-8S, 1212-8S Specification-PACK-0007-14 25-Jun-12 PowerPAK 1212-8 | |
Contextual Info: VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB |
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VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 O-220AB O-220 E78996 JEDEC-JESD47 VS-20CTH03PbF VS-20CTH03-N3 | |
Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration |
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SQ9945BEY AEC-Q101 SQ9945BEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2550 MHz 4.5 VDC 2570 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +2.0 +4.0 +6.0 dBm 30 mA Pushing: 2.0 MHz/V |
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10kHz 100kHz CVCO55BE-2550-2570 25-Jun-12 | |
Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration |
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SQ9945BEY AEC-Q101 SQ9945BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
AMPHENOL 999-226
Abstract: AMPHENOL BNC 999-226 999-226 amphenol 999-226 AMPHENOL+999-226
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MIN/15 25-Jun-12 31-5539-XXXX AMPHENOL 999-226 AMPHENOL BNC 999-226 999-226 amphenol 999-226 AMPHENOL+999-226 |