Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    25JUN12 Search Results

    25JUN12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2600 MHz 4.7 VDC 2900 MHz Tuning Voltage: 0.3 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +5.0 +8.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic :


    Original
    10kHz 100kHz CVCO55BE-2600-2900 25-Jun-12 PDF

    Contextual Info: SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses


    Original
    J-STD-020, DO-220AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration


    Original
    SQ9945BEY AEC-Q101 SQ9945BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4190ADY

    Abstract: si41
    Contextual Info: SPICE Device Model Si4190ADY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si4190ADY 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si41 PDF

    Contextual Info: SS1P3, SS1P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses


    Original
    J-STD-020, DO-220AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    62639

    Contextual Info: SiS472ADN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SiS472ADN AN609, 2962u 4146u 8244m 3748m 3513m 5716m 8642m 25-Jun-12 62639 PDF

    Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2650 MHz 7.5 VDC 2700 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +4.0 +6.0 +8.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic :


    Original
    10kHz 100kHz CVCO55BE-2650-2700 25-Jun-12 PDF

    Contextual Info: VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current


    Original
    VS-30CTH03PbF, VS-30CTH03-N3 O-220AB JEDEC-JESD47 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: REVISIONS THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES: BODY - ZINC DIE CAST, NICKEL PLATING CONTACT - PHOSPHOR BRONZE, GOLD PLATING .000003 THICK @ CONTACT AREA ONLY, TIN PLATING AT TAIL, NICKEL PLATED OVERALL INSULATOR - POLYPROPYLENE HOUSING - PBT 15% G.F. , WHITE


    Original
    MIN/15 MIL-STD-348 25-Jun-12 PDF

    Contextual Info: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYR IG H T - R EVIS IO NS - , - A LL RIG HTS R ESER VED . By - DIRRRCGRIC ,000035-,000065 GGGD PR PGR M IR-G-45G 04 GVOR ,000145-,000275 NICKGG PR POR AM S-Q Q -N -290 NXA O-RING 000050- 000100 GGGD PR


    OCR Scan
    ASGMA583, ASGM-D-1710 C17300, IG-R-35988, IR-G-45G 25JUN12 FEB2009 12FEB PDF

    vcnl 3020

    Abstract: VCNL3020 VCNL4020 VCNL3020GS08
    Contextual Info: VCNL3020 www.vishay.com Vishay Semiconductors Fully Integrated Proximity Sensor with Infrared Emitter, I2C Interface, and Interrupt Function FEATURES • Package type: surface mount • Dimensions L x W x H in mm : 4.90 x 2.40 x 0.83 • Integrated infrared emitter, proximity sensor,


    Original
    VCNL3020 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vcnl 3020 VCNL3020 VCNL4020 VCNL3020GS08 PDF

    Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2495 MHz 4.5 VDC 2625 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm 25 mA Pushing: 1.0 MHz/V


    Original
    10kHz 100kHz CVCO55BE-2495-2625 25-Jun-12 PDF

    Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2186 MHz 4.5 VDC 2250 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +3.0 +5.0 +7.0 dBm 20 35 mA Harmonic Suppression 2 Harmonic :


    Original
    10kHz 100kHz CVCO55CC-2186-2250 25-Jun-12 PDF

    Contextual Info: VS-30CTH03PbF, VS-30CTH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common cathode 2 • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current


    Original
    VS-30CTH03PbF, VS-30CTH03-N3 O-220AB JEDEC-JESD47 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    30Q10

    Abstract: IHLP1616BZ-11 IHLP-1616BZ-11 IHLP-1616BZ
    Contextual Info: IHLP-1616BZ-11 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Frequency range up to 1.0 MHz • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation


    Original
    IHLP-1616BZ-11 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 30Q10 IHLP1616BZ-11 IHLP-1616BZ-11 IHLP-1616BZ PDF

    week code SILICONIX

    Contextual Info: Part Marking Information www.vishay.com Vishay Siliconix DEVICES: PowerPAK SO-8 PowerPAK SO-8L PowerPAK 1212-8 PowerPAIR® 6 x 3.7 PowerPAK 1212-8S PowerPAIR 6 x 5 PowerPAIR 3 x 3 Single and Dual 7401 LL TYWF 7401 = Example Base Part Number or marking codea


    Original
    1212-8S 25-Jun-12 week code SILICONIX PDF

    PowerPAK 1212-8

    Abstract: 1212-8S
    Contextual Info: Device Orientation www.vishay.com Vishay Siliconix Device Orientation PowerPAK 1212-8, PowerPAK 1212-8S, and PowerPAK SO-8 DEVICE ORIENTATION PACKAGE METHOD PowerPAK 1212-8 T1 PowerPAK SO-8 T1 PowerPAK 1212-8S T1 User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification-PACK-0007-14


    Original
    1212-8S, 1212-8S Specification-PACK-0007-14 25-Jun-12 PowerPAK 1212-8 PDF

    Contextual Info: VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-220AB


    Original
    VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 O-220AB O-220 E78996 JEDEC-JESD47 VS-20CTH03PbF VS-20CTH03-N3 PDF

    Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration


    Original
    SQ9945BEY AEC-Q101 SQ9945BEY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2550 MHz 4.5 VDC 2570 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +2.0 +4.0 +6.0 dBm 30 mA Pushing: 2.0 MHz/V


    Original
    10kHz 100kHz CVCO55BE-2550-2570 25-Jun-12 PDF

    Contextual Info: SQ9945BEY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.064 RDS(on) () at VGS = 4.5 V 0.082 ID (A) per leg 6 Configuration


    Original
    SQ9945BEY AEC-Q101 SQ9945BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AMPHENOL 999-226

    Abstract: AMPHENOL BNC 999-226 999-226 amphenol 999-226 AMPHENOL+999-226
    Contextual Info: NOTES: 1. MATERIALS AND FINISHES: BODY - ZINC DIE CAST, NICKEL PLATING CONTACT - PHOSPHOR BRONZE, GOLD PLATING .000003 THICK @ CONTACT AREA ONLY, TIN PLATING AT TAIL, NICKEL PLATED OVERALL INSULATOR - POLYPROPYLENE HOUSING - PBT 15% G.F. , BLACK FORK PIN - BRASS, TIN PLATING


    Original
    MIN/15 25-Jun-12 31-5539-XXXX AMPHENOL 999-226 AMPHENOL BNC 999-226 999-226 amphenol 999-226 AMPHENOL+999-226 PDF