25JUL9 Search Results

Contextual Info: PRODUCT NO 28.0 !j;f - 9054-8-601 26.0 *0.2 ON TIP *0.13 ON BASE 2.0 *0.1 NON ACCUM *0.2 . ON TIP i 2.0 * DATE DESCRIPTION ECR S10288 RLSO BS LOW BY ECR S20202 BS LOW 25JUL92 ECR S20292 BS LOW 280CT92 ECR S20300 BS LOW Q3N0V92 ECR S30073 YB TAN 03MAR93 28AUG91

S7 marking

Abstract: siliconix j175 SST174
Contextual Info: Tem ic J/SST174 Series S e m i c o n d u c t o r s P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 Product Summary P a rt N um ber V GS off (V) n>S(oD) M a x (Q ) Ipfoff) T y p (pA ) to N TVp (ns) J/SST174 5 to 10 85 -1 0 25 J/SST175 3 to 6

TO71 package

Abstract: 2N5565 2n5564 2N5566
Contextual Info: Tem ic 2N5564/5565/5566 S e m i c o n d u c t o r s Matched N-Chanel JFET Pairs Product Summary P a rt N u m b er VGS off (V) V (B R )G S S M in(V ) gis M in (mS) I g TVp (pA) 2N5564 -0.5 to -3 -40 7.5 -3 5 2N5565 -0.5 t o -3 -40 7.5 -3 10 2N5566 -0.5 to -3

Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5

VQ2004J

Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

37654

Abstract: PAD5 PAD Series JPAD50 PAD50 SSTPAD100 diode pico-amp PAD1 sstpad5
Contextual Info: PAD/JPAD/SSTPAD Series Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 JPAD50 SSTPAD5 SSTPAD100 Product Summary Part Number IR Max pA PAD1 –1 PAD5/JPAD5/SSTPAD5 –5 PAD50/JPAD50 –50 SSTPAD100 –100 Features Benefits Applications D Negligible Circuit Leakage Contribution

Contextual Info: 4 3 DRAWING MADE IN THIRD ANGLE PROJECTION TH I S DRAWING IS UNPUBLISHED. £ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 DIST G RIGHTS RESERVED. REVISIONS 14 ZONE LTR B DESCRIPTION REV 8 REDWN DATE PER 0 7 2 0 - 0 0 4 5-94 S 0 7 2 0 -1 2 4 - 9 4

2N5545

Abstract: 2N5546 2N5547
Contextual Info: 2N5545/46/47/JANTX/JANTXV Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5545 –0.5 to –4.5 –50 1.5 –50 5 2N5546 –0.5 to –4.5 –50 1.5 –50 10 2N5547

VQ2004J

Contextual Info: VQ2004J P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

2N5564

Abstract: 2N5565 2N5566 jfet low noise n-chanel 2N5564 equivalent
Contextual Info: 2N5564/5565/5566 Matched N-Chanel JFET Pairs Product Summary jVGS1 – VGS2j Max mV Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) 2N5564 –0.5 to –3 –40 7.5 –3 5 2N5565 –0.5 to –3 –40 7.5 –3 10 2N5566 –0.5 to –3 –40

VP0808B

Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V

VCR2N

Abstract: jfet transistor for VCR Siliconix JFET P channel Junction FET AN105 siliconix VCRN VCR7N
Contextual Info: VCRN/4N/7N JFET Voltage-Controlled Resistors Product Summary Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 For applications information see AN105. Features Benefits Applications

VQ2004J

Contextual Info: VQ2004J P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –60 5 @ VGS = –10 V –2 to –4.5 –0.41 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories,

matched pair JFET

Abstract: TO71 package C 5198 Siliconix JFET Pairs Transistor C 5198 2N5564 2N5565 2N5566
Contextual Info: 2N5564/5565/5566 Matched N-Chanel JFET Pairs Product Summary jVGS1 – VGS2j Max mV Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) 2N5564 –0.5 to –3 –40 7.5 –3 5 2N5565 –0.5 to –3 –40 7.5 –3 10 2N5566 –0.5 to –3 –40

zener diode 15 v

Abstract: ultra low igss pA SD5400CY sst211 sot-143 5401 transistor datasheet SD5000 quad sd5000i SD5000N SD5001N SD5401CY
Contextual Info: SD5000/5400 Series N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary Part Number V BR DS Min (V) VGS(th) Max (V) rDS(on) Max (W) Crss Max (pF) tON Max (ns) SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2 SD5000N 20 1.5 70 @ VGS = 5 V

U421

Abstract: "n-channel jfet" Siliconix JFET Dual Siliconix JFETs Dual Siliconix N-Channel JFETs Dual N-Channel JFET U423 JFET DUALS SST401 U421 jfet
Contextual Info: U421/423 Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) U421 –0.4 to –2 –40 U423 –0.4 to –2 –40 IG Max (pA) jVGS1 – VGS2j Max (mV) 0.3 –0.25 10 0.3 –0.25 25 V(BR)GSS Min (V) gfs Min (mS) Features Benefits Applications

E13288

Contextual Info: 4 DRAWING MADE THIS IN THIRD DRAWING 7 ANGLE IS UNPUBLISHED. COPYRIGHT 3 19 RELEASED BY ANP FOR PUBDICATION INCORPORATED. ALL 2 <3> PROJECTION INTERNATIONAL RIGHTS DI ST LOC ,19 REV I 5 I0N5 14 G RESERVED. P F LTR ZONE DESCRIPTION DATE REV PER 0 G 3 A - 0 1 2 3 - 0 2

t amp

Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS RESERVED. DIST REVISIONS 14 6 P F ZONE LTR DATE DESCRIPTION D ADDED 34107-1 PER PR 94-62

e328

Abstract: LR7189 MIL-T-10727 MIL-T-7928 34114
Contextual Info: 4 3 2 1 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS RESERVED. DIST 14 6 REVISIONS P F ZONE LTR DESCRIPTION c ADDED 3 4 1 1 4 - 1 PER DATE

LR7189

Abstract: MIL-T-10727
Contextual Info: 4 3 DRAWING MADE IN THIRD ANGLE PROJECTION TH I S DRAWING IS UNPUBLISHED. £ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC ,19 DIST 14 G RIGHTS RESERVED. REVISIONS ZONE LTR DESCRIPTION DATE B REV 8 REDWN PER 0 7 2 0-004 5-94 S 0720-0 12 4-94

Contextual Info: 4 DR AW IN G MADE IN THIRD AN GL E PROJ EC TI ON THIS DRAWING IS UNPUBLISHED. C COPY RI GH T 19 3 RELEASED FOR PUBLICATION BY AMP IN C O R P O R A T E D . 1 2 LOC ,19 6 ALL INTERNATIONAL R I GH TS RESERVED. DIST REVISIONS 14 P F ZONE LTR DE SC RI PT IO N

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. $ COPYRIGHT - 3 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. By - D DI M C MOD PLUG MOD PL UG B A Hi PAIR 3 J PAIR 1 A 1471-9 3/ 11 L PAIR PAIR 2 2 1 LOC EH DIST R E V IS IO N S 00 P DESCRIPTION LTR N DATE ECR-12-021378 DWN

2N5196

Abstract: 5546 Siliconix JFET Duals 2N5199 40 v 20 amp, diode c 5198 Dual N-Channel JFET Transistor C 5198 jfet differential transistor 2N5197
Contextual Info: 2N5196/5197/5198/5199 Monolithic N-Channel JFET Duals Product Summary Part Number VGS off (V) IG Max (pA) jVGS1 – VGS2j Max (mV) 2N5196 –0.7 to –4 –50 1 –15 5 2N5197 –0.7 to –4 –50 1 –15 5 2N5198 –0.7 to –4 –50 1 –15 10 2N5199 –0.7 to –4

SST174

Abstract: J174 J175 J176 J177 SST175 j174 EQUIVALENT siliconix j174
Contextual Info: J/SST174 Series P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST174 J/SST175 5 to 10 85 –10 25 3 to 6 125 –10 25 J/SST176 1 to 4 250 –10 25 J/SST177