25A IGBT Search Results

Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

SSC1000-25

Abstract: SSC800-25
Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

SSC1000-25

Abstract: SSC800-25
Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

SSC800-25

Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mArms]

bridge rectifier 25a

Abstract: 9883
Contextual Info: GBI 25A . GBI 25M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 25A . GBI 25M Publish Data Features

smps 5kw

Abstract: LIN opto isolator VCVS 1 phase inverter using igbt 50V 5A SCHEMATIC servo dc IGBTS SCHEMATIC POWER SUPPLY WITH IGBTS F240 transistor SCHEMATIC servo IGBTS IR2213 schematic diagram ac-dc inverter
Contextual Info: PIIPM25P12B008 Advance Data PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient

SCHEMATIC servo dc IGBTS

Abstract: power amplifier absolute AD 2400 SCHEMATIC SCHEMATIC servo IGBTS PIIPM25P12B008 opto isolator rs422 smps 5kw 100C TMS320LF2406A VTH100C SCHEMATIC 12V 5A smps
Contextual Info: Bulletin I27147 06/03 PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient

igbt 25A toshiba

Abstract: TOSHIBA IGBT 25A
Contextual Info: MG25J1BS11 TOSHIBA TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance tf —1.0 "S Max. (Iq = 25A) High Speed Low Saturation Voltage : V 0 E(sat) = 2.7V (Max.) (Ic = 25A)

100C

Abstract: EMP25P12B shunt resistor current motor
Contextual Info: Bulletin I27149 01/03 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

IGBT Transistor 1200V, 25A

Abstract: schematic e.m.p 100C EMP25P12B
Contextual Info: EMP25P12B Advance Data EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

Contextual Info: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V

SCHEMATIC servo IGBTS

Abstract: SCHEMATIC servo dc IGBTS smps 5kw schematic diagram ac-dc inverter 1 phase inverter using igbt 50V 5A datasheet IR2213 power amplifier absolute AD 3600 SCHEMATIC 3 phase inverter schematic diagram SCHEMATIC POWER SUPPLY WITH IGBTS 1000 BASE Isolation Modules 5kV
Contextual Info: Bulletin I27147 02 - Oct PIIPM25P12B008 Programmable Isolated IPM PI-IPM Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient

100C

Abstract: EMP25P12B ECONOPACK
Contextual Info: Bulletin I27149 08/07 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

MG25J1BS11

Contextual Info: TOSHIBA MG25J1BS11 TOSHIBA GTR MODULE SILICON N - CHANNEL IGBT MG25J1BS11 U nit in HIGH POWER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0,us M ax. (lQ = 25A) Low Saturation Voltage : VcE(sat) = 2-7V (Max.) (Ic = 25A)

Contextual Info: FGA25N120FTD tm 1200V, 25A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 25A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V

RGT50TS65D

Contextual Info: RGT50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.65V PD 174W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

Contextual Info: RGT50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.65V PD 174W lFeatures TO-247N (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

RGTH50TS65D

Contextual Info: RGTH50TS65D Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W lFeatures TO-247 (1)(2)(3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching

Contextual Info: RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247N (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching

MG25J1BS11

Abstract: tcp 8005
Contextual Info: MG25J1BS11 TOSHIBA MG25J1BS11 TOSHIBA GTR MODULE SILICON N -C H A N N EL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATION. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= 1.0/^s Max. (I0 = 25A) Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 25A)

Contextual Info: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT3 Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop IGBT3 Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Q3 11 • Solar converter

Contextual Info: APTGV25H120T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 1200V ; IC = 25A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 1200V ; IC = 25A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter

RGTH50TS65

Contextual Info: RGTH50TS65 Data Sheet 650V 25A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 25A VCE(sat) (Typ.) 1.6V PD 174W TO-247 (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) High Speed Switching