25FEB10 Search Results

Contextual Info: 4 TH IS DRAWING 2 15 UN PU B LIS H E D - COPYRIGHT RELEASED ROR PUBLIC ATION BY TYCO ELECTRONICS CORPORATION. D IS T LOC ALL INTERNATIONAL RIGHTS RESERVED. REVIS IO N S J LTR E1 D E S C R IP T IO N REVISED EC R — 1 0 —0 0 4 0 3 6 DATE DWN APVD 25FEB10

1888655-1

Abstract: 6116317-1
Contextual Info: 107-68094 Packaging Specification 25Feb10 Rev M STACKED MOD JK ASSY, 2X8, 8 POSN 1. PURPOSE 目的 Define the packaging specifiction and packaging method of STACKED MOD JK ASSY, 2X8, 8 POSN product. 订定 STACKED MOD JK ASSY, 2X8, 8 POSN 产品之包装规格及包装方式。

Contextual Info: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT J RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D IS T LOC ALL INTERNATIONAL RIGHTS RESERVED. R E V IS IO N S LTR C2 DESCRIPTION REVISED EC R — 1 0 —0 0 4 0 3 6 DATE DWN APVD 25FEB10 TS KB D D -1 8 + 0 . 5 5.4 + 0 . 512.1+0.2-

Contextual Info: 4 2 THIS DRAWING 15 UNPUBLISHEDCOPYRIGHT RELEASED ROR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL INTERNATIONAL RIGHTS RESERVED. DIST J R E V IS IO N S LTR C1 DESCRIPTION REVISED EC R — 10 —0 0 4 0 3 6 DATE DWN APVD 25FEB10 TS KB D D 36.5 + 0 . 5 -

1116526-1

Abstract: 555780 5558310-1 558342-1 5406491-X CAT-5 406285-X tyco 5557560-1
Contextual Info: 107-68025 Packaging Specification 25Feb10 Rev AB MODULAR TELEPHONE JACK 1. PURPOSE 目的 Define the packaging specification and packaging method of MODULAR TELEPHONE JACK products. 订定 MODULAR TELEPHONE JACK 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

sharp laser diodes

Abstract: TSOP855
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

17024

Abstract: AN609 IRF510S
Contextual Info: IRF510S_RC, SiHF510S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si4178DY

Abstract: 7313 AN609
Contextual Info: Si4178DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

transistor 6822

Abstract: 6822 mosfet 4800 transistors 6822 6822 transistor 731 MOSFET 4800 mosfet AN609 38734
Contextual Info: SiZ710DT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

ASTM B 545

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L REVISIO N S RIGHTS R E S E R VE D . G C O R P O R A T IO N . o: LTR A1 D E S C R IP T IO N REV PER

AN609

Abstract: IRF520 SiHF520
Contextual Info: IRF520_RC, SiHF520_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

TSOP35D25

Abstract: TSAL6200
Contextual Info: TSOP35D25 Vishay Semiconductors IR Receiver Modules for 3D Synchronization Signals FEATURES • Center frequency at 25 kHz to reduce interference with IR remote control signals at 30 kHz to 56 kHz • Package can be used with IR emitters with wavelength 830 nm as well as standard 940 nm

Contextual Info: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

AN609

Abstract: IRF510 IRF510R
Contextual Info: IRF510_RC, SiHF510_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SEM32G

Abstract: sandisk eMMC 4.41 emmc 4.41 spec JESD84-A441 eMMC 4.41 SEM04G emmc pcb layout SEM08G 153 ball eMMC memory sandisk 32GB Nand flash
Contextual Info: e.MMC 4.41 I/F Preliminary Data Sheet 80-36-03433 February 2010 SanDisk Corporation Corporate Headquarters • 601 McCarthy Boulevard • Milpitas, CA 95035 Phone 408 801-1000 • Fax (408) 801-8657 www.sandisk.com 80-36-03433 SanDisk iNAND e.MMC 4.41 I/F - Data Sheet

NC-AA

Abstract: NCEE10
Contextual Info: NC Series Vishay Electro-Films Thin Film Single Value Chip and Wire Capacitors FEATURES Product may not be to scale • Wire bondable • Small size: 0.020 inches square to 0.060 inches square • Substrate: Silicon with gold backing • Dielectric: Silicon dioxide/silicon nitride

AN609

Abstract: IRF520S SiHF520S
Contextual Info: IRF520S_RC, SiHF520S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,