25789 Search Results

Contextual Info: DASH NO. M CODE REVISIONS MADE FROM IS S U E CHANGES ER 20122 GMF 0 2 /2 0 /8 0 1 CN SD 25789 C 0 2 /2 3 /8 4 2 CN CT 27136 C 0 4 /1 3 /8 5 3 CN 33162 E REDRAWN JCA 06/21/91 4 CN 36716 C KH 12/06 /9 5 5 CN 37888 B GEH 0 9 /02 /9 9 6 CN 38561 E TML 0 5 /2 8 /0 2

25789

Contextual Info: DASH NO. M CODE REVISIONS MADE FROM O ER GMF 20122 02/20/80 CO I CN SD 25789 C 02/23/84 r-o CN CT 27136 C 04/13/85 I co CN 33162 E REDRAWN JCA 06/21/91 □o oo CN 36716 C KH 12/06/95 CN 37888 B GEH 09/02/99 CN 38561 E TML 05/28/02 4:1 sc a le NOTES: 1. INTERFACE PER MIL-STD-348, FIG. 3 0 1 -2 AS APPLICABLE .

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

XIOC-12DO-R

Abstract: XIOC-32DI XIOC-16DX XIOC xioc-16di XIOC-TERM32 XIOC-2CNT-100KHZ XIOC-1CNT-100KHZ XIOC-16DO-S XIOC-32DO
Contextual Info: 3/65 XIOC XIOC digitale and analog input/output modules XIOC technology and networking modules XIOC the compact I/O and much more XIOC are local expansion modules for direct connection to all XControl controllers. Up to 15 modules, selected from a wide range of digital, analog and

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

TL494 car charger schematic diagram

Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
Contextual Info: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _

Contextual Info: 12 11 10 £ 8 SOME OR A L L M A T E R I A L S A V E R S F I L L E D IN H ^ 1 & > 99Vd 6=^ i H d “ i 3 a SY M B O L D E F I N I T I O N A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL O DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING.

CML FX407A

Abstract: 4071 pin diagram 2403Hz 3 pins trimmer capacitor pin configuration FX5070A 355K 5070A FX4071A FX5071 Scans-00553
Contextual Info: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION Obsolete Product - For Information Only FUNCTIONAL SCHEMATIC PUBLICATION D/4071/2/280 FX4070A FX 5070A FX4071A FX5071A HYBRID INTEGRATED 5 TONE ENCODER/ DECODERS FEATURES • FU LLY FUNCTIONAL 5-TONE SELECTIVE CALLING SYSTEM

M2261001

Abstract: b1615 Packard 12052635 M2261011 AM B8 202 BKD 48 M2261029 iStick mac 97 ab M2261008
Contextual Info: lb 15 14 13 12 11 a 10 MISSING SYMBOLS SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. M TOTAL NO OF INSPECTIONS REQUIRED 22 LAST NO. USED 14 ÜL MIN

actron ab

Abstract: 11a18 CHN 949 VF800
Contextual Info: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention

CHN 602

Abstract: CHN 847
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020

SST39VF200-70-4C-EK

Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
Contextual Info: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

CHN 847

Abstract: chn 734
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption

Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

chn 347

Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 512 Kbit /1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • • • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 Superior Reliability Uniform 4 KByte sectors Fast Read Access Time:

Contextual Info: MOD U LA R D E V I C E S INC 4S E D b274205 DDÜOebS b IP1DI 4 W att H yb r id:x-, DC-DC CONVERTERS SERIES 2578 SINGLE OUTPUT CONVERTERS Output voltage CONDITION — Output current V „- 16 to 50 VDC Efficiency PB. max rated load PARAMETER Line regulation