256X16 SOJ 3.3V Search Results

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

IC1210-m128LQ

Abstract: IC1114 IC1210-f128lq IC1230-M128LQ IC1110-F128LQ IC1210 M128LQ IC1110-M128LQ IC1210 xd card reader IC1230-F128LQ
Contextual Info: ISSI Advanced Memory Solutions PRODUCT SELECTOR GUIDE JUNE 2006 DRAM SRAM EEPROM LOGIC ICSI PRODUCTS Dear Valued Customer, While many memory suppliers are discontinuing SRAM and low to medium density DRAM products, we at ISSI are not. While many memory suppliers are

KM616V1002B

Contextual Info: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History

KM616V1002B

Contextual Info: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History

44-TSOP2-400BF

Contextual Info: PRELIMINARY K6R1016V1B-C/B-L, K6R1016V1B-I/B-P Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History

Contextual Info: M O SEL VITELIC V53C311616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)

Contextual Info: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only

GLT41116-40J4

Abstract: GLT41116-35J4 64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE GLT4 GLT41116 GLT41116-30J4 GLT41116-30TC GLT41116-35TC GLT41116-40TC GLT41116-45J4
Contextual Info: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Feb 2004 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and

Contextual Info: IB M 0 1 1 6 1 6 0 IB M 0 1 1 6 1 6 0 B IB M 0 1 1 6 1 6 0 M IB M 0 1 1 6 1 6 0 P 1 M x 16 12/8 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles

GLT41116-35J4

Abstract: GLT710008
Contextual Info: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and

GLT41316-40J4

Contextual Info: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and

ae5t

Abstract: j4213
Contextual Info: KM6161002B, KM6161002BI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6161002B- 8 : 200mA(Max.) KM6161002B -1 0 : 195mA(Max.)

KM6161002B

Contextual Info: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

KM6161002B

Contextual Info: CMOS SRAM KM6161002B, KM6161002BI Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

Contextual Info: CMOS SRAM K6R1016C1B-C, K6R1016C1B-I Document Title 64Kx16 Bit High Speed Static RAM 5.0V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

K6R4016C1A-I15

Abstract: 44-TSOP
Contextual Info: PRELIMINARY K6R4016C1A-C, K6R4016C1A-E, K6R4016C1A-I CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0

KM6164002A

Contextual Info: PRELIMINARY KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0

KM6164002A

Contextual Info: PRELIMINARY KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

IS23SC55160

Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

tms 5110

Abstract: SDQ11 L1039
Contextual Info: J2L0024-17-Y1 作成：1998年 1月 MSM54V16272 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16272 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

SDQ14

Contextual Info: J2L0026-17-Y1 作成：1998年 1月 MSM54V16282 l 前回作成：1997年 9月 ¡ 電子デバイス MSM54V16282 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー

ax81

Abstract: MSM54V16282 SDQ11
Contextual Info: FJDS54V16282-05 作成：2000年 2月 ¡ 電子デバイス 前回作成：1998年 1月 MSM54V16282 262,144-Wordx16-Bit MULTIPORT DRAM n 概要 ）ポー