256K X 4 Search Results

Contextual Info: f 9 I VITELIC ADVANCED V105HJ8/9 256K x 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE Description Features The V105HJ8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 (Write/Bit) DRAMs. The 256K x 9

53C256

Abstract: 53C104 V53C104
Contextual Info: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory

0436A8

Contextual Info: È = = = = - = P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

Contextual Info: I'V VrTEUC V105AJ8/9 256K X 8, 256K x 9 CMOS WRITE-PER-BIT MEMORY MODULE ADVANCED Features Description 262,144 x 8 (or x 9) bit organization • Utilizes 256K x 4 (Write/Bit) and 256K x 1 CMOS DRAMs ■ Fast Page mode operation ■ Write-Per-Bit feature

Contextual Info: È = = = = - = P relim inary IBM0418A81QLAA IBM0418A41 QLAA IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

Contextual Info: IBM0418A81QLAA IBM0418A41QLAA P relim inary IBM0436A81QLAA IBM0436A41QLAA 8M b 256K x36 & 512x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations • Common I/O

Contextual Info: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IBM 0418A8ACLAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

Contextual Info: I = = = = •= P relim inary IBM0418A4ACLAA IBM0436A8ACLAA IB M 0418 A8 AC LAA IBM0436A4ACLAA 8M b 256K x36 & 512K x18 and 4M b (128K x36 & 256K x18) SR A M Features • 256K x 36 or 512K x 18 organizations • Latched Outputs • 128K x 36 or 256K x 18 organizations

104J32

Contextual Info: MOSEL- VITELIC PRELIMINARY V104J32, V104J36 256K x 32, 256K x 36 SIMM Features Description m The V104J32 M em ory Module is organized as 2 62.144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The V104J36 is organized as

Contextual Info: MOSEL-VITELIC MOSEL- VITELIC b2E ì> • ^3533^1 GDDS311 755 « M O V I V104J8/9 256K x 8, 256K x 9 CMOS MEMORY MODULE Features Description ■ 262 ,1 4 4 x 8 (or x 9) bit organization ■ Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast Page mode operation

CY7C1361V25

Abstract: CY7C1363V25 CY7C1365V25
Contextual Info: 329 CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device

S-1317

Contextual Info: 256K 256K x 1-BIT CMOS STATIC RAM PLASTIC SIP MODULE ID T 7 M P 1 5 6 FEATURES: DESCRIPTION • Hlgh-density 256K (256K x 1) CMOS static RAM module The IDT7MP156 is a 256K (256K x 1-bit) high-speed static RAM module constructed on an epoxy laminate surface using four

Contextual Info: MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

MX27C4100DC

Abstract: MX27C4096DC-10 mx27C4100DC-10 MX27C4100DC-12 mx27c4096dc EPROM sop 40 MX27C transistor organ MX27C4096 MX27C4100
Contextual Info: INDEX MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • Operating current: 60mA • Standby current: 100uA • Package type: • 256K x 16 organization MX27C4096, JEDEC pin out • 512K x 8 or 256K x 16 organization(MX27C4100, • •

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

MX27L4096

Abstract: PM0307 27l41-
Contextual Info: Introduction MX27L4100/27L4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27L4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27L4100, ROM pin out compatible) • Wide voltage range, 2.7V to 3.6V • +12.5V programming voltage

30 pin simm memory

Abstract: 30 pin 9-bit simm memory simm 30-pin 9-bit
Contextual Info: AK59256S/AK59256G 262,144 x 9 bit CMOS Dynamic Random Access Memory ACCUTEK MICROCIRCUIT DESCRIPTION The Accutek AK59256 high density memory module is a random access memory organized in 256K x 9 bit words. The assembly consists of two 256K x 4 and one 256K x 1 DRAMs

CY7C1361V25

Abstract: CY7C1363V25 CY7C1365V25
Contextual Info: CY7C1361V25 CY7C1363V25 CY7C1365V25 PRELIMINARY 256K x 36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32 / 512K x 18 common I/O • Fast clock-to-output times — 7.5 ns for 117-MHz device — 8.5 ns (for 100-MHz device)

MX27C4096DC-10

Abstract: MX27C4100 MX27C4096 MX27C4100DC-10 MX27C4096DC-12 MX27C4100DC10 MX27C4100DC EPROM 40PIN 27c4100 MX27C4100DC-12
Contextual Info: Introduction Selection Guide MX27C4100/27C4096 4M-BIT 512K x 8/256K x 16 CMOS EPROM FEATURES • 256K x 16 organization(MX27C4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 100/120/150 ns

Contextual Info: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • H igh-dansity 256K (256K x 1) CMOS static RAM m odule • Inputs and outputs d ire ctly TTL-com patible The IDT7MC156 is a 256K (256K x 1-bit) high-speed static RAM m odule constructed on a co-fired ceram ic substrate using four

27C4100

Abstract: 27c4096 27C4096 eprom ups vh 2000 MX27C4096 MX27C4100 MX27C4096Q
Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

27C4096

Abstract: EPROM sop 40 MX27C4096 MX27C4100 27c4100
Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns