256K SYNCHRONOUS DRAM SAMSUNG Search Results

S8S3122X16

Abstract: S8S3122X16-TCR1 S8S3122X16-TCR2
Contextual Info: S8S3122X16 CMOS SDRAM 256K x 16 SDRAM 128K x 16bit x 2 Banks Synchronous DRAM LVTTL Version 0.0 Sep 2001 Samsung Electronics reserves the right to change products or specification without notice. Ver 0.0 Sep. '01 S8S3122X16 CMOS SDRAM Revision History Version 0.0 Sep. 2001

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

MT41LC256K32D4

Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
Contextual Info: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

SRAM sheet samsung

Abstract: K6R4016VIC ISAS512K16LTD 256K Synchronous DRAM samsung
Contextual Info: Data Sheet Part No. ISAS512K16LTD Irvine Sensors Corporation Microelectronics Products Division 8Mbit 512K x 16 SRAM Memory Stack Features: q q Low Profile: same PCB footprint as a

KS84C21

Abstract: MEC 2MHZ SS52M 430-0144
Contextual Info: KS84C21/C22 ¡ H SAM SUNG DYNAMIC RAM CONTROLLERS Preliminary Semiconductor September 1988 FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic RAM DRAM controllers. They simplify

smart modular

Abstract: SM332Q4 SM332Q4A0
Contextual Info: • Telecom & Industrial SRAM Modules • SMART Modular Technologies Custom designs available QUICK REFERENCE GUIDE: 12 CACHE SRAM MODULES CACHE SIZE CACHE TYPE SPEED PART NUMBER DIMENSIONS L x H x TOr. AVAILABILITY INTEL COASt COMPLIANT, L2 CACHE MODULES, 1 6 0 PIN, 6 4 BIT DATA BUS

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

Contextual Info: DYNAMIC RAM CONTROLLERS KS84C21/C22 Preliminary FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic R A M DRAM controllers. They simplify the interface between the microprocessor and the DRAM

Contextual Info: KS84C31/32 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­

M5M418165

Abstract: NEC 2581 CSP-48 AS7C33256PFS18A tc5588 KM6865 FLASH CROSS 256K16 TR-81090 la 4620
Contextual Info: Product Guide SRAM 64K 256K 512K All densities in bits 1M 2M 1.65V-3.6V Low-power Asynchronous IntelliwattT M 32Kx8 5V Fast Asynchronous 4M 8M 16M 512K×8 1M×8 2M×8 256K×16 3.3V Fast Asynchronous 8K×8 32K×8 32K×16 32K×16 128K×8 512K×8 64K×16

68030

Abstract: Motorola 68030 I486 KS84C31 KS84C32 MC68030 MC68040 tr4l Samsung KS84C32 68030 80486 microprocessor circuit diagram
Contextual Info: DYNAMIC RAM CONTROLLERS KS84C31/32 PRODUCT OVERVIEW FEATURES The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the ORAM array, while also significantly reducing the required de­

I486

Abstract: KS84C31 KS84C32 MC68030 MC68040 RSC18 schematic diagram samsung led
Contextual Info: DYNAMIC RAM CONTROLLERS KS84C31/32 PRODUCT OVERVIEW FEATURES The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­

SAMSUNG HT Q9

Abstract: Dynamic RAM Controller samsung led monitor Synchronous DRAM and Samsung schematic diagram samsung led DLSFT samsung monitor circuit diagrams 256KDRAM 84c21
Contextual Info: KS84C21/C22 DYNAMIC RAM CONTROLLERS Preliminary FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs • Page, nibble and static column accesses • Interleaved or non-interleaved accesses to maximize system performance • Programmable or mask-programmed versions

ARRAY MICROSYSTEMS

Abstract: H.261 encoder chip S0020-0 videoflow H.261 codec chip XAD10 QCIF samsung XAD22
Contextual Info: KS Ol 4 4 M E C DSP ELECTRONICS The KS0144 (MEC: Motion Estimation FEATURES Coprocessor) integrated circuit is a 7.2 GOPS • A single KS0144 performs real-time motion parallel processor specifically optimized for the real estimation in compliance with MPEG-1 (ISO /

SRAM 4T cell

Abstract: memory cell 4T 6T
Contextual Info: Introduction to Cypress SRAMs Abstract An SRAM is a memory element that is a key part of the core of many systems. Most high-performance systems have SRAMs in them. SRAM stands for STatic Random Access Memory. SRAMs differ in many repsects rom other kinds of

Contextual Info: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly

Samsung KS84C32 68030

Abstract: 68EC030
Contextual Info: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly

micom p122

Abstract: micom p127 samsung spindle motor dvd rom Samsung dvd player circuit diagram ks1453 dvd efm KS1461 KS1452 vcd player block diagram dvd circuit diagram
Contextual Info: DATA PROCESSOR KS1453 INTRODUCTION The KS1453 is a Data Process IC which acts as a buffer control for outputting the demodulated data by Hand Shake. It also executes error corrections of the Sliced output of the RF signal from the disc EFM signals . It is

68030

Contextual Info: KS84C31/32 FEATURES 40 MHz operation Easy Interface to Motorola and Intel CPUs 68040/68030 burst mode operation i486 burst mode operation Page, static column and nibble mode accesses Interleaved and non-lnterleaved accesses Synchronous and asynchronous operation

5A/12DIOR-DRC

Contextual Info: JAM Ca '! « S A M S U N G K S 8 4 E C 3 0 DYNAMIC RAM CONTROLLER Sen,¡conductor M archi 991 FEATURES PRODUCT OVERVIEW The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the

68EC030

Abstract: on4475 Motorola 68030 68030 KS84C31 KS84C32 MC68040 MC68EC030 oti schematic
Contextual Info: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly

k552

Abstract: K552 motorola aaeo LA 7873 68EC030 architecture of 80486 microprocessor M9M material KS84C31 KS84C32 MC68040
Contextual Info: KS84EC30 SAMSUNG DYNAMIC RAM CONTROLLER Semiconductor M archi 991 PRODUCT OVERVIEW FEATURES The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly

S3C2410A-20

Abstract: S3C2410A26 S3C2410A-26 S3C2410A20 S3C2410A 272-FBGA uart protocol touch screen Internal ROM Booting TOUCH SCREEN MCU ARM920T
Contextual Info: S3C2410A 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION This manual describes SAMSUNG's S3C2410A 16/32-bit RISC microprocessor. This product is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance microcontroller solution in small die size. To reduce total system cost, the S3C2410A includes the following