256K 8BIT Search Results

Contextual Info: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS floating gate process. Its 256K bits of

Contextual Info: HT24LC256 CMOS 256K 2-Wire Serial EEPROM Features Description • Operating voltage: 2.2V~5.5V for Ta=-40˚C to +85˚C The HT24LC256 device is a 256K-bit 2-wire serial read/write non-volatile memory device manufactured using a CMOS loating gate process. Its 256K bits of

kje w6

Contextual Info: KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM GENERAL DESCRIPTION FEATURES The Samsung KM428C257 is a CMOS 256K x 8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic random access memory RAM port and 512 x 8 static serial access memory (SAM) port.

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 % 4 1 H E D01bb52 SSI KM428C256, KM428V256 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION ■ Dual port Architecture 256K x 8 bits RAM port 512x8 bits SAM port • Performance range : The Samsung KM428C/V256 is a CMOS 256K x 8 bit Dual

Contextual Info: CMOS DUAL-PORT RAM MODULE 128K 16K x 8-BIT & 256K (32K x 8-BIT) advance INF0^ ?36 IDT7M137 FEATURES: DESCRIPTION • High-density 128K/256K-bit C M O S dual-port R A M module The IDT7M136/137 are 128K/256K-bit high-speed C M O S dual-port static R AM modules constructed on a multi-layered

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • Vlhima G01b7Db 22T H S M G K PRELIMINARY KM428C258 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port A rchitecture 256K x 8 b its RAM port 512 x 8 bits SAM port ■ Performance range : The Samsung KM428C258 is a CMOS 256K x 8 bit Dual

MN102H730FGT

Abstract: MN102H73G MN102H73K MN102HF73G
Contextual Info: MN102H730FGT, MN102H73G, MN102H73K MN102H730FGT Type Internal ROM type ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73G External MN102H73K MN102HF73G Mask ROM 128K  10K TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K

GENERAL ELECTRIC OCR 125 KW

Contextual Info: MN102H73 Series MN102H730FGT Type MN102H73G External Internal ROM type ROM byte 128K  10K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN102H73K MN102HF73G Mask ROM TQFP128-P-1414B MN102HF73K FLASH 256K 128K 256K 12K 10K 12K TQFP128-P-1414A

MN101EF16K

Abstract: MN101E16G QFP100-P-1818B
Contextual Info: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type 256K MN101EF16N FLASH 384K 256K 512K 6K 12K 20K 16K 30K QFP100-P-1818B LQFP100-P-1414,

Contextual Info: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet June 11, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type 256K MN101EF16N FLASH 384K 256K 512K 6K 12K 20K 16K 30K QFP100-P-1818B LQFP100-P-1414,

IBM025161LG5D60

Abstract: vram dual port IBM025161 IBM025170 "Video RAM" BM025 ibm025170lg5 IBM025161LG5D-6H IBM025171256 IBM025160256
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

IBM025161

Abstract: IBM025161LG5D-6 BM025 IBM025161LG5D-6H IBM025170 ibm025161lg5d-60 ibm025171 IBM025161LG5D60 IBM025170LG5D-60 IBM025171NG5D-60
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

Contextual Info: Standard Products UT8R256_16 256K x 16 SRAM Advanced Data Sheet August 21, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: MN101E16 Series MN101E16K Type MN101E16M 256K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16Y MN101EF16K Mask ROM Internal ROM type MN101EF16Z FLASH 384K 256K 512K 12K 20K 16K 30K LQFP100-P-1414, QFP100-P-1818B LQFP100-P-1414,

MN103SFE4K

Contextual Info: MN103SE4 Series MN103SE4D Type MN103SE4G 64K ROM byte MN103SE4K MN103SFE4G Mask ROM Internal ROM type 128K 256K 128K 256K 8K 4K 8K 4K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN103SFE4K FLASH LQFP080-P-1414A LQFP080-P-1414A (Under development)

Contextual Info: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet November 9, 2001 Rev G FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: MN102H60G, MN102H60K MN102H60G Type MN102H60K MN102HF60G Mask ROM Internal ROM type MN102HF60K FLASH ROM byte 128K 256K 128K 256K RAM (byte) 4K LQFP100-P-1414, MLGA100-L-1010 10K 4K LQFP100-P-1414, MLGA100-L-1010 10K Package (Lead-free) Minimum Instruction

Contextual Info: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet September 4, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT8R256K16 256K x 16 SRAM Advanced Data Sheet March 25, 2002 FEATURES q 10ns maximum access time q Asynchronous operation, functionally compatible with industry-standard 256K x 16 SRAMs q CMOS compatible inputs and output levels, three-state

Contextual Info: MN102H60 Series MN102H60G Type MN102H60K MN102HF60G Mask ROM Internal ROM type MN102HF60K FLASH ROM byte 128K 256K 128K 256K RAM (byte) 4K LQFP100-P-1414, MLGA100-L-1010 10K 4K LQFP100-P-1414, MLGA100-L-1010 10K Package (Lead-free) Minimum Instruction Execution Time

MN101E16M

Abstract: MN101EF16N
Contextual Info: MN101E16 Series MN101E16G Type MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type MN101EF16N FLASH ROM byte 128K 256K 384K 256K 512K RAM (byte) 4K 12K 20K 30K QFP100-P-1818B (Under planning) QFP100-P-1818B (Under development) QFP100-P-1818B 16K QFP100-P-1818B

Contextual Info: MN102H60 Series MN102H60G Type MN102H60K MN102HF60G Mask ROM Internal ROM type MN102HF60K FLASH ROM byte 128K 256K 128K 256K RAM (byte) 4K LQFP100-P-1414, MLGA100-L-1010 10K 4K LQFP100-P-1414, MLGA100-L-1010 10K Package (Lead-free) Minimum Instruction Execution Time

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K