256KBIT Search Results

10-15V

Abstract: X5563 X5563S8 X5563S8I
Contextual Info: Preliminary Information X5563 CPU Supervisor with 256Kbit SPI EEPROM FEATURES DESCRIPTION • Selectable watchdog time — 0.15s, 0.4s, 0.8s off • Low VCC detection and reset assertion —Four standard reset threshold voltages —Re-program low VCC reset threshold voltage

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56A25609 is a 256K x 9 dynamic RAM module, mounted two 1-Mbit DRAM HM514256A sealed in SOJ package and 256Kbit DRAM (HM51256) sealed in PLCC package. An outline of the

FM24C256

Abstract: FM24W256 FM24C256-G
Contextual Info: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1808

Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

TMS44C256

Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
Contextual Info: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore

LE25LB2562

Contextual Info: Ordering number : ENA1435A LE25LB2562M 256Kbit Serial SPI EEPROM SPI Bus Overview The LE25LB2562M is a 256Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is

HMN328D

Contextual Info: HANBit HMN328D Non-Volatile SRAM MODULE 256Kbit 32K x 8-Bit ,28Pin DIP, 5V Part No. HMN328D GENERAL DESCRIPTION The HMN328D nonvolatile SRAM is a 262,144-bit static RAM organized as 32,768 bytes by 8 bits. The HMN328D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write

AK6516CF

Abstract: EEPROM AK6516C power supply 5v X101 X110
Contextual Info: ASAHI KASEI [AK6516C] AK6516C SPI bus 256Kbit Serial CMOS EEPROM Features … Advanced CMOS EEPROM Technology … Single Voltage Supply: 1.6V to 5.5V … 256Kbits; 32768 x 8 organization … SPI Serial Interface Compatible … Low Power Consumption 0.8µA Max. Standby mode

Contextual Info: AT88SC0104C, AT88SC3216C, AT88SC0808C, AT88SC1616C, AT88SC0204C AT88SC0404C, AT88SC6416C AT88SC12816C, AT88SC25616C Atmel CryptoMemory Specification Datasheet Features • • A family of nine devices with user memories from 1Kbit to 256Kbit EEPROM user memory

Contextual Info: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

95256w6

Abstract: 95256W
Contextual Info: M95256 256Kbit Serial SPI Bus EEPROM With High Speed Clock FEATURES SUMMARY • Compatible with SPI Bus Serial Interface Positive Clock SPI Modes ■ Figure 1. Packages Single Supply Voltage: – 4.5 to 5.5V for M95256 – 2.5 to 5.5V for M95256-W – 1.8 to 5.5V for M95256-R

FM18W08

Abstract: FM1808-70-SG FM1808 fm1808-70-pg MS-013 B063 FM180870SG
Contextual Info: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1808-70-SG

Abstract: FM1808-70SG FM1808 FM1808-70-PG MS-013 fm180870pg FM180870SG B063050013G
Contextual Info: FM1808 256Kb Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

THE M48Z

Abstract: AN1012 M48Z35 M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

NTE27C256-70D

Abstract: NTE27C256-15D NTE27C256-12D
Contextual Info: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,

FM1808

Abstract: e1 fram FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S MS-013 water level electrical control circuit diagram
Contextual Info: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules

Contextual Info: CMOS MASK ROM KM23C256 G 256KBit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pfci IMP (Polarity pnQnnNM bli cMp a m U i pin M d output enable pin) • KM23C2S6Q: 32-pin SOP (Polarity programmable cMp enable pin and output enable pin)

Contextual Info: IS25CD025 256Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS25CD025: 32K x 8 256Kbit • Cost Effective Sector/Block Architecture

Contextual Info: Digital Subscriber Line ADSL APPLICATION • ADSL Asymmetrical Digital Subscriber Line Provides POTS and High Speed Data on ONE Existing Line • Does NOT Tie Up a Switched Circuit at Central Office • Data Rates to 8Mbits (Downstream) and to 256kbits (Upstream)

M6378A

Abstract: MSM6388 MSM62* ADPCM 63P74 MSM6376 MSM63* ADPCM
Contextual Info: O K I Semiconductor INTRODUCTION 1. VOICE SYNTHESIS LSI PRODUCTS OKI SPEECH LSI PRODUCTS SYNTHESIZER Internal Mask-ROM -M SM 6375 FAMILY- Internal OTP External ROM M SM 6372 128Kbit M SM 6373 256Kbit M SM 6374 512Kbit M SM 6375 1M bit M SM 63P74 75 Family

SOH28

Abstract: M48Z35AV
Contextual Info: M48Z35AV 5.0V or 3.3V, 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■ Automatic power-fail chip deselect and WRITE

M48Z35

Abstract: M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256Kbit 32Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages: