25608 Search Results

h25g

Contextual Info: MITSUBISHI LSIs 25608S1N-70, -85, -10, -12,-15 2 0 9 7 1 52-B IT 2 6 2 144-WORD BY 8-BIT CM 0S STATIC RAM DESCRIPTION The M H 25608S 1N PIN CONFIGURATION (TOP VIEW) is a 2 0 9 7 1 5 2 bits C M O S static R A M m o d u le organized as 2 6 2 1 4 4 -w o r d s b y 8 -b its . It consists

M5M5256

Abstract: f MH25 MH25608TNA-12L mitsubishi a1s MH25608TNA-85L 74HC138 MH25608TNA-85H MH*08TNA mark al5 MH25608TNA-I5H
Contextual Info: MITSUBISHI LSIs 25608TNA-85L,-10L,-12L,-15L/ 25608TNA-85H,-10H,-12H,-15H 2 0 9 7 1 5 2 - B IT 2 6 2 1 4 4 -W O R D B Y 8 - B IT CM OS S T A TIC R AM M O DULE DESCRIPTION The M H 25608TN A is a 2097152 bits CMOS static RAM module organized as 262144-words by 8-bits. It consists

Contextual Info: Product Number: 599-11-256-08-007428 Description: BGA Socket 1mm Grid; BGA Socket Surface Mount Accepts .008-.013" Leads Plating Code: 11 Shell Plating: 10 µ" Gold over 100 µ" Nickel Inner Contact Plating: 10 µ" Gold over 50 µ" Nickel 256-08-007 16 X 16

Contextual Info: H A R R HM-92560 IS S E M I C O N D U C T O R 256K Synchronous CMOS RAM Module January 1992 Features Description • Low Standby Current. 500|iA The HM-92560 is a high density 256K bit CMOS RAM module. Six­ teen synchronous HM-6516 2K x 8 CMOS RAMs in Leadless Chip

Contextual Info: Product Number: 587-10-256-08-005437 Description: BGA Header .050 Grid; BGA Header Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel 256-08-005 16 X 16 # Of Pins Mill-Max Part Number 256 587-10-256-08-005437 RoHS Compliant LOOSE PIN:

25608

Abstract: M5M5256 MH25608TNA-10H
Contextual Info: MITSUBISHI LSIs 25608TNA-85L,-10L,-12L,-15L/ 25608TNA-85H,-10H,-12H,-15H 2 0 9 7 1 5 2 -B IT 2 6 2 144-WORD BY 8-BIT CM 0S STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M H 2 5 6 0 8 T N A is a 2 0 9 7 1 5 2 bits CMOS static R A M module organized as 26 2144 -w o rd s by 8-bits. It consists

25608

Contextual Info: MITSUBISHI LSIs 25608AJ-8,-10, -12/ 25608AJA-8, -10, •12 FAST P A G E MODE 262144-W ORD BY 8-BIT DYNAMIC RAM DESC RIPTIO N The 25608AJ, A JA is 262144 word x 8 bit dynamic RAM and consists of two industry standard 256K x 4 dynamic RAMs in SO J. The mounting of SO J on a single in-line package pro­

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Abstract: CLAA141XF01 SONY crt colour tv circuit diagram UB141X01 HDS150PX14-A philips cdi schematics SDM032 LG color tv Circuit Diagram schematics TX38D91 TX38D91VC1FAC
Contextual Info: TM420.book Page I Monday, September 23, 2002 10:27 AM Acer TravelMate 420 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.T19V5.001 PRINTED IN TAIWAN

AM90C256-12

Abstract: Am90C256-08 AM90C256-10
Contextual Info: Am90C256 256K x 1 CM O S Enhanced Page Mode Dynamic RAM PRELIMINARY 9SZ006UJV DISTINCTIVE CHARACTERISTICS • • • • • C ontinuous data rate over 25 MHz Random access within a row Flow-through colum n latch fo r pipelining Low operating current - 70 mA

m5m4256

Abstract: MH25608-15 30N9 MH25608J12 MH25608-12 MH25608J-12 MH25608J-10 MH25608J-85 MH25608JA-10 MH25608JA-85
Contextual Info: MITSUBISHI LSIs 25608J-85,-10,-12,-15/ 25608JA-85,-10,-12,-15 PAGE M ODE 2 6 2 1 4 4 - WORD BY 8 -B IT D Y N A M IC RAM DESCRIPTION The 25608J, JA is 262144 word x 8 bit dynamic RAM and consists of nine industry standard 256K x 1 dynamic RAMs in plastic leaded chip carrier.

NC26S

Abstract: MH25608AJ-8 MH25608AJA-8 MA2560
Contextual Info: M IT S U B IS H I LSIs 25608AJ-8,-10,-12/ 25608AJ A-8, -10,-12 OE MODE 2 6 2 1 4 4 -WORD BY S -B IT DYNAM IC RAM DESCRIPTIO N The M H 2 5 6 0 8 A J , A JA is 2 6 2 1 4 4 w ord x 8 bit dynam ic R A M and consists of tw o industry standard 2 5 6 K x 4 dynam ic RAMs in SOJ.

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Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

MT9P031

Abstract: MT9P031I12STC 2592H MT9P031I12STH aptina 2752c aptina CMOS image sensor mt9p031i1 0xA900 CMOS sensor Aptina
Contextual Info: MT9P031: 1/2.5-Inch 5Mp Digital Image Sensor Features 1/2.5-Inch 5Mp CMOS Digital Image Sensor MT9P031 For the latest data sheet, refer to Aptina’s Web site: www.aptina.com Features • • • • • • • • • • • • • • Table 2: Aptina DigitalClarity imaging technology

74HC00F

Contextual Info: TOSHIBA TC74LVQ00F/FN/FS Quad 2-Input NAND Gate The TC74LVQ00 is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wir­ ing C2MOS technology. Designed for use in 3.3 Vott systems, it achieves high speed operation while maintaining the CMOS low power dis­

Contextual Info: Product Number: 582-11-256-08-005414 Description: BGA Socket .050 Grid; BGA Socket Surface Mount Accepts .015-.022" Leads Plating Code: 11 Shell Plating: 10 " Gold over 100 μ" Nickel Inner Contact Plating: 10 μ" Gold over 50 μ" Nickel 256-08-005

Contextual Info: Product Number: 582-11-256-08-005414 Description: BGA Socket .050 Grid; BGA Socket Surface Mount Accepts .015-.022" Leads Plating Code: 11 Shell Plating: 10 " Gold over 100 μ" Nickel Inner Contact Plating: 10 μ" Gold over 50 μ" Nickel 256-08-005

Contextual Info: Appendix to MKP385 www.vishay.com Vishay BCcomponents Detailed Ratings ELECTRICAL DATA 1 URDC (V) CAP. ( F) 0.011 min. 160 82 max. 0.010 min. 250 62 max. 0.0043 min. 400 27 max. 0.0015 min. 630 15 max. 0.001 min. 850 10 max. 0.00047 min. 1000 6.8 max. 0.00047 min.

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

CY7C1263V18

Abstract: CY7C1261V18 CY7C1265V18 CY7C1276V18
Contextual Info: CY7C1261V18, CY7C1276V18 CY7C1263V18, CY7C1265V18 36-Mbit QDR -II+ SRAM 4-Word Burst Architecture 2.5 Cycle Read Latency Features • Configurations With Read Cycle Latency of 2.5 cycles: Separate independent read and write data ports ❐ Supports concurrent transactions

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

E17294

Abstract: 151-243 ntc RA53 thermistor 151-215 ntc VA3410 thermistor Ra53 RS 151-243 THERMISTOR 4.7 151-237 198-949 ntc
Contextual Info: Issued March 1994 E17294 Thermistors NTC thermistors The RS range of NTC thermistors includes standard tolerance negative temperature coefficient thermistors, a range of small close tolerance R/T curve matched thermistors and a range of DO-35 package devices.

Contextual Info: Product Number: 599-10-256-08-007429 Description: BGA Header 1mm Grid; BGA Header Plating Code: 10 Shell Plating: 10 µ" Gold over 100 µ" Nickel 256-08-007 16 X 16 # Of Pins Mill-Max Part Number 256 599-10-256-08-007429 RoHS Compliant LOOSE PIN: Loose Pin Used: 9929

Contextual Info: M ITSUBISHI LSIs 25608J-85,-10,-12,-15/ 25608JA-85,-10,-12,-15 PAGE M ODE 2 6 2 1 4 4 - W ORD BY 8 -B IT D Y N A M IC RAM DESCRIPTION The M H 2 5 6 0 8 J , JA is 2 6 2 1 4 4 w ord x 8 bit dynam ic R A M and consists o f nine industry standard 2 5 6 K x 1 dynam ic

Contextual Info: MITSUBISHI LSIs 25608S1N-70, -85, -10, -12,-IS 2 0 9 7 152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The 25608S1N is a 2097152 bits CMOS static RAM module organized as 262144-words by 8-bits. It consists of eight industry standard 32K x 8 static RAMs.