255FL Search Results

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55465P/J-20, TC55465P/J-25 TC55465P/J-35 ¡d e s c r ip t io n ] The TC55465P/J is a 262,144 b i t s high speed s t a t i c random ac c e ss memory organ ized as 65,536 words by 4 b i t s using CMOS tech n o lo g y , and operated from a s in g le 5 -v o lt supply.

8M856

Abstract: IDT7M864
Contextual Info: I NT EG R A T E » 4 8 2 5 7 7 1 IN TEG RA TED Inte3 rated DevlceTèchn 0l03 y. Inc. DEVICE T? Ì>Ì| 4025771 GaoSTat. 7 J ~ D EV IC E 97D 02726 256K 32K x 8-BIT C M O S STATIC RAM M O DULE (Low-Power Version) D IDT8M856L FE A T U R ES : D ESCRIPTIO N :

Contextual Info: L7C162 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES | DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ H igh Speed — to 12 ns m axim um □ Low Pow er O peration

P4C198

Abstract: P4C198A
Contextual Info: PE R F O R M A N C E SEMICONDUCTOR SÜE D • TDbSS'i? Ü Ü D 1 Û S Ô AID « P S C P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS 7^ v 6 ^ 3 - t FEATURES I Data Retention, 10 pA Typical Current from 2.0V P4C198L/198AL (Military)

Contextual Info: DIE PRODUCTS DAC80KD-V DAC80KD-I DAC80MD-V DAC80MD-I DIE B U R R -B R O W N 12-BIT DIGITAL-TO-ANALOG CONVERTER DIE V o u t (V o u t = DAC80KD-V, = DAC80MD-V, = DAC80KD-I = DAC80MD-I) lo u r I0Ut FEATURES • LOW POWER DISSIPATION: 345mW • FULL ±10V SWING WITH V c c = ±1ZV0C

H018

Abstract: TC55B88P TC55B88
Contextual Info: 8,192 W ORD x 8 BIT BiCMOS STATIC RAM DESCRIPTION The TC55B88P/J is a 65,536 bits high speed static random access m em o r y organized as 8,192 words by 8 bits using BiCMOS technology, and operated from a single 5-volt supply. Toshiba’s BiCMOS technology and advanced circuit form provides high speed feature.

Contextual Info: H igh P e r fo r m a n c e •■ AS7C4096 AS7C34096 A 512KX8 H CM O S SRAM 5 I 2 K X 8 C M O S SR A M Features • O rgan ization : 5 2 4 ,2 8 8 w o rd s x 8 bits • 3 6 -p in JEDEC stan dard pack ages • H igh speed - 4 0 0 m il T SO P II - 5 / S / 6 / 7 n s o u tp u t enable access tim e

AI523

Contextual Info: = ^ CY7C197 ¿m CYPRESS —. • — 262,144 x 1 Static R /W RAM SEMICONDUCTOR Features Functional Description • A u to m a tic pow er-dow n w hen d esele cted T h e CY7C197 is a high-perform ance C M O S static R A M organized as 262,144 words by 1 bit. Easy m em ory expansion is

Contextual Info: 1 In te3w ted DeviceTechnolc>3y. Inc 256K 16K x 16-BIT & 128K (8K X 16-BIT) CM O S STATIC RAM PLASTIC SIP M ODULES IDT8 M P 656S IDT8 M P 628 S FEATURES: DESCRIPTION: • H ig h -d en sity 2 56 K /12 8K C M O S static R A M m o d u les T h e ID T 8 M P 6 5 6 S /ID T 8 M P 6 2 8 S a re 2 5 6 K /1 2 8 K -b lt h ig h -speed

HD01

Contextual Info: CYM1610 CYPRESS SEMICONDUCTOR 16K x 16 Static RAM Module Features Functional Description • High-density 256K-bit SRAM module T h e CYM 1610 is a high-perform ance 256-kbit static R A M m odule organized as 16K words by 16 bits. This m odule is constructed from four 16K. x 4 SRA M s

am256

Contextual Info: _CYM1641 SEMICONDUCTOR 256K x 16 Static R A M M odule Features Functional Description • High-density 4-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns T h e CYM1641 is a high-perform ance 4-m egabit static R A M m odule organized