252MW Search Results

Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti­ lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar­

Contextual Info: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 4 0 4 B ,H Y 5 1 V 1 6 4 0 4 B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: HY51V16100B Series -HYUNDAI 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques

MN41X17400CTT-10

Abstract: TSOP026-P-0300B
Contextual Info: Panasonic 16M 4M-word x 4bit Dynamic RAM 2.4V ~ 3.6V 2048 Refresh / 32ms Fast Page Mode P /N : M N 4 1 X 1 7 4 0 0 C T T -1 0 The technical information described herein provides the typical characteristics and the application circuit o f a respective product, not intended to guarantee or permit a

MSP430

Abstract: TPS79718 TPS79718DCKR TPS79718DCKRG4 TPS79718DCKT TPS79730 TPS79733
Contextual Info: TPS797xx www.ti.com SLVS332G – MARCH 2001 – REVISED NOVEMBER 2009 Ultra-Low IQ, 50mA LDO Linear Regulators with Power Good Output in SC70 Package FEATURES DESCRIPTION • • • • • • The TPS797xx family of low-dropout LDO voltage regulators offers the benefits of low-dropout voltage

TPS797xx

Contextual Info: TPS797xx www.ti.com SLVS332G – MARCH 2001 – REVISED NOVEMBER 2009 Ultra-Low IQ, 50mA LDO Linear Regulators with Power Good Output in SC70 Package FEATURES DESCRIPTION • • • • • • The TPS797xx family of low-dropout LDO voltage regulators offers the benefits of low-dropout voltage

Contextual Info: TPS797xx www.ti.com SLVS332I – MARCH 2001 – REVISED OCTOBER 2013 Ultralow IQ, 50mA LDO Linear Regulators with Power Good Output in SC70 Package Check for Samples: TPS797xx FEATURES DESCRIPTION • • • • • • The TPS797xx family of low-dropout LDO voltage

MTBF recom

Abstract: 217F RI-0505 RI-xx12S
Contextual Info: , Features Unregulated Converters ● ● ● ● ● ● ● ECONOLINE Custom Solutions Available 1kVDC Isolation No External Components Required Optional Continuous Short Circuit Protected UL94V-0 Package Material No Heatsink Required Efficiency to 87% DC/DC-Converter

Contextual Info: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains

SSOP-90

Contextual Info: New products MBM29PDL1280F 128M-bit x16/×32 Dual-Operation Flash Memory with Page Mode MBM29PDL1280F This flash memory can simultaneously read/program/erase data with a single 3V power supply. It possesses fast access performance with an initial access time of 70ns/80ns and a page access time of 25ns/30ns under low voltage.

Contextual Info: H Y 5 1 V 16 4 1 O A S e r ie s “HYUNDAI 4M X 4-bit CMOS DRAM with WPB PRELIMINARY DESCRIPTION The HY51V16410A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: TPS797xx www.ti.com SLVS332G – MARCH 2001 – REVISED NOVEMBER 2009 Ultra-Low IQ, 50mA LDO Linear Regulators with Power Good Output in SC70 Package FEATURES DESCRIPTION • • • • • • The TPS797xx family of low-dropout LDO voltage regulators offers the benefits of low-dropout voltage

HY51V16160BJC

Contextual Info: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: PEDD51V18160F-01 1Semiconductor MSM51V18160F This version: May. 2000 Previous version :  Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate

Contextual Info: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

GM71V16403C

Abstract: 16403
Contextual Info: GM71V16403C GM71VS16403CL 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Description Features The GM71V S 16403C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)16403C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS

Contextual Info: LMR10530 www.ti.com SNVS814A – JUNE 2012 – REVISED APRIL 2013 LMR10530 SIMPLE SWITCHER 5.5Vin, 3.0A Step-Down Voltage Regulator in WSON-10 Check for Samples: LMR10530 FEATURES DESCRIPTION • • • The LMR10530 regulator is a monolithic, high frequency, PWM step-down DC/DC converter

Contextual Info: TPS79718 TPS79730 TPS79733 Actual Size 2,15 mm x 2,3 mm SLVS332B – MARCH 2001 – REVISED JUNE 2001 ULTRALOW-POWER SC70/SOT-323 PACKAGED 10 mA LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT element. Because the PMOS pass element behaves as a low-value resistor, the dropout voltage is very low,

TPS79718

Abstract: TPS79718DCKR TPS79718DCKT TPS79730 TPS79730DCKR TPS79730DCKT TPS79733
Contextual Info: TPS79718 TPS79730 TPS79733 Actual Size 2,15 mm x 2,3 mm SLVS332B – MARCH 2001 – REVISED JUNE 2001 ULTRALOW-POWER SC70/SOT-323 PACKAGED 10 mA LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT element. Because the PMOS pass element behaves as a low-value resistor, the dropout voltage is very low,

P132-P134

Abstract: p331 TRANSISTOR P452
Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor

aw7 TRANSISTOR

Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor

HY51V17404C

Contextual Info: HY51V17404C,HY51V16404C 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

a9ra

Contextual Info: J2G0126-17-61 作成：1998年 3月 ¡ 電子デバイス MSM51V16800D/DSL l 暫定 MSM51V16800D/DSL 2,097,152-Wordx8-Bit DYNAMIC RAM：高速ページモード n 概要 MSM51V16800D/DSLはCMOSプロセス技術を用いた2,097,152ワ−ド×8ビット構成のダイナミックラ