250VO Search Results

IRHM7264SE

Contextual Info: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test

Contextual Info: Provisional Data Sheet No. PD-9.1432 International IQ R Rectifier \ dv/dt R A T E D HEXFET* TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRHNA7264SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.1100, (SEE) RAD HARD HEXFET

Diode SOT-23 marking Js

Contextual Info: BAS19/BAS20 BAS21 Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS PG Long Life, High Reliability series Low Impedance Anli-Solvenl Feature Through 250Vonly Long Lile •Extended load life up to 7000hours at +1 05 °C . PG Long Life •Specifications P erfo rm an ce C h a ra cte ristics

250volt power regulator

Abstract: IRHG7214 IRHG8214
Contextual Info: Provisional Data Sheet No. PD- 9.1711 IRHG7214 IRHG8214 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 250Volt, 2.25Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD

DIODE JS

Abstract: diodes ir trr 50ns DIODE JS 4 MarKING JS DIODE JS.4 Diode SOT-23 marking J J marking js 4 Switching diode 4
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS21A/C/S Features • • Power dissipation: 225mW Tamb=25℃ Forward current: 200mA 225mW 250Volt Switching Diode SOT-23 A D BAS21A

Contextual Info: International IOR Rectifier Pro, *. dv/dt R ATED HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRH N A7264SE N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11 on, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

Contextual Info: Provisional D atasheet No. P D -9.1711 International IOR Rectifier R E P E T IT IV E A V A L A N C H E A N D dv/dt R A T E D IRHG7214 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L MEGA RAD HARD 250Volt, 2.25Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y

Contextual Info: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET

Contextual Info: Provisional Data Sheet No. PD - 9.1393C International IO R Rectifier IRHM7264SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11£1, (SEE) RAD HARD HEXFET

pcb 200W audio amplifier

Abstract: IRHNB7264SE
Contextual Info: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No

BAV19WS

Abstract: BAV20WS BAV21WS
Contextual Info: BAV19WS/BAV20WS BAV21WS Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS P b Lead Pb -Free Features: * Fast Switching Speed. * Surface Mount PackageIdeally. * High Conductance. * For General Purpose Switching Applications. Suited for Automatic Insertion.

IRHNA7264SE

Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1432A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology

IRHNA7264SE

Contextual Info: Provisional Data Sheet No. PD-9.1432 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.

Contextual Info: BAS20/BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 200-250VOLTS Features: * We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw

Contextual Info: Provisional Data Sheet No. PD- 9.1711 International I R Rectifier R EPETITIVE AVALANCHE AND dv/dt RATED IRHG721 4 IRHG8214 HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 250Volt,2.25£2, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD H ARD te c h n o lo g y

BAS20

Abstract: BAS19 BAS21
Contextual Info: BAS19/BAS20 BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications 3 Mechanical Data:

250Volts

Abstract: 7272 QIE0220001 QIE0220002
Contextual Info: QIE0220002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Trench Gate Design Six IGBTMODTM 200 Amperes/250Volts Label P N CONNECTION DIAGRAM Page 1 5/2/2007 QIE0220002 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

BAS20

Abstract: sot23 marking JR bas21 js Diode SOT-23 marking J BAS19 BAS21 MARKING JS sot-23
Contextual Info: BAS19/BAS20 BAS21 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications 3 Mechanical Data:

Contextual Info: BAV19WS/BAV20WS BAV21WS Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 120-250VOLTS P b Lead Pb -Free Features: * Fast Switching Speed. * Surface Mount PackageIdeally. * High Conductance. * For General Purpose Switching Applications. Suited for Automatic Insertion.

IRHM7264SE

Contextual Info: Provisional Data Sheet No. PD - 9.1393C IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD

Contextual Info: ^ 5^*^ MMWA-EF METALLIZED POLYESTLR FILM CAPACITORS MMWA-EF^ jr,7sX ♦ # ft/FEATURES • i 5 HI * 5 it <D* I ' =i > x > -9- V t „ • a i r o S ji • Ic S t i f t t U L 9 4 V -0 £t „ [z & -p T I ' f <0 <D t ti r i's t X tK + '> i t £ m L T l' t

F4823

Abstract: F2683
Contextual Info: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type ECWF B D e s ig n e d fo r a p p lic a tio n s w h e re h ig h c u rre n t a n d h ig h fre q u e n c y are re q u ire d • Features • L o w - lo s s • E x c e lle n t fre q u e n c y c h a ra c te ris tic s

taf 3

Abstract: Vgl-45 tungsram ot-400 tungsram
Contextual Info: 25 TUNGSRAM R A D IO Type TAF 3 — Hochfrequenz-Penthode R e g e l- C h a r a k t e r is t ik D ie R öhre TAF 3 ist eine H o c h fre q u e n z -P e n th o d e so a u sg e b ild e t ist, d a ss d a s Z u stan d e kom m e n e in e r mit R e ge l-C h ara kteristik,