250FIA Search Results

MTE1010A

Abstract: MTD6010A
Contextual Info: PHOTO TRANSISTOR MARKTECH INTERNATIONAL läE D ST^bSS QQQGMOÔ 1 MTD6010Ä SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • OPTICAL SWITCH • TAPE, CARD R E A D E R S • V ELO C ITY S E N S O R FEATURES • High sensitivity: I I =250fiA

Contextual Info: LT1351 r j u n e TECH NO LO G Y 250|nA, 3MHz, 200V/p.s O p e ra tio n a l A m p lifier F€OTUR€S DCSCRIPTIOfl • 3MHz Gain Bandwidth ■ 200V/jis Slew Rate ■ 250fiA Supply Current ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable

Contextual Info: PRELIMINARY CMOS EEPROM KM93C56V/KM93C66V 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3.0V~5.5V • Low power consumption — Active: 3 mA TTL — Standby: 250fiA (TTL) • Memory organization:

LM348J

Contextual Info: LM146 LM246 - LM346 SGS-THOMSON PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS • PROGRAMMABLE ELECTRICAL CHARAC­ TERISTICS ■ BATTERY POWERED OPERATION ■ LOW SUPPLY CURRENT 250fiA/amplifier ■ GAIN-BANDWIDTH PRODUCT : 1MHz ■ LARGE DC VOLTAGE GAIN : 120dB

IRFPC50

Contextual Info: PD-9.656A International SS Rectifier IRFPC50 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 6 0 0 V ^D S on - 0 . 6 0 Q

Contextual Info: AD VA N C E D PO WE R T E C H N O L O G Y blE D • Qg5 7 W QDDQfl3S 747 H A V P WWaa d v a n c ed POW ER Te c h n o l o g y QD 2N7227 400 Volt JX2N7227* JV2N7227* O S POWER MOS IV 0.315Q 'QUALIFIED TO MIL-S-19500/592 31/7/92 JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

IRC630

Contextual Info: International S Rectifier PD -9.565B IRC630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 200V R DS on = 0 . 4 0 0 lD = 9 .0 A

irfz22

Abstract: IRFZ20/FI
Contextual Info: ZETEX SEMICONDUCTORS TSD D ^70370 0005S41 ZETBj T 1 95D 05541 D T*- 7 9 -H N-channel enhancement mode vertical D M O S FET IRFZ20 IRFZ22 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

smd DA RN

Contextual Info: SG2000 SERIES 5IUC0N HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require

transistor w1d

Abstract: 03N06C transistor w1d 90 TO-251AA W1D TRANSISTOR
Contextual Info: inteikil RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE D a tn S hee t J u l y 19 99 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N‘Channel Power MOSFETs These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener

2D 1002 diode

Abstract: SMD MARKING CODE 9b 2b smd diode marking LM smd 2d 1002 -reel S57C3 sot-23 Marking 3D Switching Diode SOT23 Marking 3D smd 2d 1002 S1902 diode Marking Code lm
Contextual Info: PD 9.1508A International IGR Rectifier IR L M S 1503 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Voss = 30V R ü s (o n ) = 0 . 1 o n Description Fifth Generation HEXFETs from International Rectifier

TTL 74-series IC

Abstract: IC 7493n FJJ14 TTL 7490 7401 ic configuration ic 7490n 7400N 7401N 7402N 7403AN
Contextual Info: INTEGRATED CIRCUITS LIST OF COMPARABLE TYPES T T L RANGE COMMERCIAL VERSIONS Type No. 7400N 7401N 7401 AN 7402N 7403N 7403AN 7404N 7405N 7405AN 741 ON 7420N 7430N 7440N 7441 AN 7442N 7450N 7451N 7453N Mullard types Type No. Mullard types FJH131 FJH231 FJH311

IRFG1Z0

Abstract: CHN 617 irfg1ZO irfg 40 71713 IRFG1Z3 eg-1w
Contextual Info: HE 0 I MÖS54S2 GOOTbMQ Q | Data Sheet No. PD-9.395C INTERNATIONAL R E C T I F I E R I« R IN T E R N A T IO N A L R E C T IF IE R T -V 3 -2 S HEXFET TRANSISTORS 4 N-CHANMEL POWER MOSFETs 14LEAD DUAL-IN-LINE QUAD ,— s?0 11 o-4 1 ^ 'is CERAMIC SIDE BRAZED PACKAGE

smd diode S4 64a

Contextual Info: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis­ tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.

RF830

Contextual Info: International gäg Rectifier 1 HEXFET Power M O S F E T INTERNATIONAL RECTIFIER 4Ö55452 D01476B G3Ö _ Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements PD-9.311K INR IRF830 bSE I> ^ dss - 500V

d773

Abstract: diode sy 710 sy 710 diode
Contextual Info: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

Contextual Info: im iFFI im SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 0.25 3.5 3.0 V Dss 60V I. *D(cont) 45A W -» i ^DS(on) 0.027Q A CD FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE TT • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: y U IM IT R O D E UCC1921 UCC2921 UCC3921 Latchable Negative Floating Hot Swap Power Manager • Precision Fault Threshold • Programmable: Average Power Limiting, Linear Current Control, Overcurrent Limit and Fault Time • Fault Output Indication Signal

WO2M

Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
Contextual Info: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

Figure12

Abstract: IRLU014 AN-994 IRLR014
Contextual Info: International S Rectifier PD-9.624A IRLR014 IRLU014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Surface Mount IRLR014 Straight Lead (IRLU014) Available in Tape & Reel Logic-Level Gate Drive RDS(on) Specified at Vgs =4V & 5V Fast Switching

IRFP260

Contextual Info: PD-9.755 International frëRj Rectifier IRFP260 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V oss - 200V

SSS7N60

Abstract: 250M SSS7N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS7N60/55 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: 1 .II 1 1 1 .¡In 1 1 mu CE P4050A/C EB4050A March 1998 N-Channel Enhancement Mode Field Transistor FEATURES • 55V , 15A, RDS ON =85mQ D @Vgs=10V • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability.

cep4060al

Contextual Info: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.