250 L 20 Search Results

2n2m

Abstract: PH 33 G
Contextual Info: UNSHIELDED CHIP INDUCTORS PM0805 SERIES L Test Q Test Freq. Freq. Miller L+20% Q Number nH Min. MHz MHz PM0805-2N2M 2.2 15 250 1500 PM0805-3N3M 3.3 50 250 1500 PM0805-6N8M 6.8 50 250 1000 PM0805-8N2M 8.2 50 250 500 PM0805-12NM 12 50 250 500 PM0805-15NM 15

IEC-68-2-20 solderability

Abstract: 105j 250v 6800 microfarad capacitor 250v 105j capacitor 22000 microfarad capacitor capacitor, 22 microfarad 250v METALLIZED POLYESTER FILM CAPACITOR 105j 1754 15000 microfarad capacitor 2700 microfarad capacitor
Contextual Info: Tecate Group PART NUMBERING SYSTEM PART NUMBER EXAMPLE MORE EXAMPLES If formed to 5mm L/S: 914-250/104K10B1/5. If cut & formed to 5mm L/S: 914-250/104K10B5/5. If cut & formed to 5mm L/S & 3mm L/L: 914-250/104K10B1/5#1. #1 = one deviation from std ex.: L/L

bsx27

Contextual Info: SEMELAB LTD BIBBIA? □□□□□S3 T • S M L B T - ^ 7 . i « A l l . . . . U j. M . J “ 0/ J T- 33-G1 * 'c hF E @ Vce /'C fT Pb 60 200 250 300 200 5 0.5 0.5 0.5 0.5 40min 40-250 40-250 40-250 35-150 2/2 10/30m 10/30m 10/30m 10/30m 70M 50M 50M 50M

Contextual Info: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 02 — 2 March 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

800B

Contextual Info: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Film Capacitors

Abstract: 250v 105j capacitor 105j 250v 105j 250v capacitor 105j 1319
Contextual Info: Tecate Group Film Capacitors PART NUMBERING SYSTEM PART NUMBER EXAMPLE MORE EXAMPLES If formed to 5mm L/S: 914-250/104K10B1/5. If cut & formed to 5mm L/S: 914-250/104K10B5/5. If cut & formed to 5mm L/S & 3mm L/L: 914-250/104K10B1/5#1. #1 = one deviation from std ex.: L/L

B85121-D-B3

Abstract: nf005 B85121-A-B1 B85121AB39 B85I21-A-B7 B85111-A-B30 B85121-A-B15 B85121-A-B9 b85121ab24 B85121-D-B2
Contextual Info: Durchführungskondensatoren Feed-through Capacitors Ausfuhrung mit Anschlußdrähten ym m m m m mmmwM ¡ t i i i i i i i i i i W S B S . V-A/~,S0/60Hz I l l i c i t ! 10 16 25 350/250^ 350/2501' 160/110 80/ 42 250/100 250/ 42 440/250 600/250 440/250 350/250

Contextual Info: Highland Terminals L MTV10-250, MTV14-250, MTV18-250 Male Disconnect, Vinyl Insulated, Butted Seam Data Sheet Product Number Wire Range AWG Mates with Male Tab Width (W' ) x Thickness L Barrel Length Barrel I.D. Maximum Insulation Diameter MTV10-250 12-10

Contextual Info: BLL6G1214L-250; BLL6G1214LS-250 LDMOS L-band radar power transistor Rev. 2 — 24 June 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.

"Power Semiconductor" nxp

Abstract: 800B
Contextual Info: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 3 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1.

LPS255-C

Abstract: P95103843 E132002 astec lps254c
Contextual Info: LPS 250 250 Watts LPS 250 Series Total Power 200 - 250 Watts Input Voltages 85 - 264 VAC 120 - 370 VDC # of Outputs Single S P E C I A L F E AT U R E S E L E C T R I C A L S P E C I F I C AT I O N S • • • • • • • • • • • • • • •

LPQ252

Abstract: LPQ253-C E132002 sk732 LPQ 250 LPQ250
Contextual Info: LPQ 250 250 Watts LPQ 250 Series Total Power 200 - 250 Watts Input Voltages 85 - 264 VAC 120 - 370 VDC # of Outputs Quad S P E C I A L F E AT U R E S E L E C T R I C A L S P E C I F I C AT I O N S • • • • • • • • • • • • • • •

PM0805-6N8M

Contextual Info: UNSHIELDED CHIP INDUCTORS PM0805 SERIES L Test Q Test Miller L±20% Q Freq. Freq. Number nH Min. MHz MHz PM0805-2N2M 2.2 15 250 1500 PM0805-3N3M 3.3 50 250 1500 PM0805-6N8M 6.8 50 250 1000 PM0805-8N2M 8.2 50 250 500 PM0805-12NM 12 50 250 500 PM0805-15NM 15

Contextual Info: Highland Terminals MT10-250, MT14-250, MT18-250 Male Disconnect, Non-Insulated, Butted Seam L Data Sheet Product Number Wire Range AWG Mates with Male Tab Width (W' ) x Thickness L Barrel Length Barrel I.D. MT10-250 12-10 0.250 x 0.032 0.75 0.25 0.150

Contextual Info: data sheet SKY65038-70LF: Low Noise General Purpose Amplifier 250 MHz–6 GHz Applications l l l 4 W  ireless infrastructure: WLAN, WiMAX, broadband, cellular base stations Test instrumentation CATV Features l l l l l l l l l B  roadband: 250 MHz–6 GHz

Contextual Info: Highland Terminals FD14-250, FD18-250 W´ Female Disconnect, Non-Insulated, Butted Seam L Data Sheet Product Number Wire Range AWG Mates with Male Tab Width (W' ) x Thickness L Barrel Length Barrel I.D. FD14-250 16-14 0.250 x 0.032 0.66 0.25 0.080 FD18-250

arcolectric switches

Contextual Info: A RCOLECTRIC 1700 Series Toggle Switches ELECTRICAL RATINGS 20A 16A 1/4HP 1/2HP 16A 16 4 20A 125-250 VAC 85C Single Pole 125-250 VAC Double Pole 125 VAC 1/2HP 250 VAC 3 Pos 125 VAC 1 HP 250 VAC 2 Pos 125-250 VAC 250 VAC 28 VDC UL E45221 UL E45221 U L /C S A

sick wl 33

Abstract: SICK WL 250 sick WS 250 - D430 sick WS250 D430 sick WL 10 sick WL SICK WS 150 D132 sick WL 36 SICK WS 150 SICK wt
Contextual Info: D AT E N B L ATT Lichtschranke Baureihe W 250 WS/WE 250 20 m WL 250 8m WT 250 100 . 300 mm 150 . 500 mm x v w Komplette Lichtschrankenfamilie in robustem, glasfaserverstärktem Kunststoffgehäuse. Sie bietet interessante Reichweiten bei kompakter Baugröße.

BLL1214-250

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Preliminary specification 2002 Jan 10 Philips Semiconductors Preliminary specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES • High power gain

Contextual Info: 5EMIKRDN V drm V rsm V rrm Irms1> Volw = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10 V 280 A 580 A 1200 SKIW 250/12 SKIW 500/12 1400 SKIW 250/14 SKIW 500/14 1600 SKIW 250/16 SKIW 500/16 Symbol Conditions SKIW 250 VoU = 4 l/min, T w = 40 °C, ED =100 % 250 A

TH-440

Abstract: TH-450 TR-482 788-1260
Contextual Info: Specialty Terminals 71F-250-32-NB, 72F-250-32-NB W´ Female Disconnect, Nylon Insulated with Insulation Grip L Data Sheet Product Number Wire Range AWG Mates with Male Tab Width (W') x Thickness 71F-250-32-NB 22-18 72F-250-32-NB 16-14 L Barrel Length Barrel

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A

ATC200B

Abstract: BLL1214-250 MLD861
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES

Sanken rb60

Abstract: rb40 rb60 RECTIFIER CTB34 CTUG3D marking WMM ctu22s CTU-12S CTB-34 fmlg12
Contextual Info: SANKEN y ELECTRIC CO L T D 3 SE ,3> Fast Recovery Diodes Rating/ Characteristics Vrm V (A) Ifsm (A) Tj ("C) 1350 1350 250 450 650 150 250 450 650 250 450 650 250 450 650 150 250 450 650 1300 1300 200 400 600 100 200 400 600 200 400600 200 400 600 100 200