25 MARKING Search Results
25 MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54F191/QEA |
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54F191/QEA - Dual marked (5962-9058201EA) |
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25 MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FE301-1 4A (100V / 4.0A ) Outline Drawings FAST RECOVERY DIODE ø6.4±0.2 ø1.4±0.1 7.5±0.2 25 MIN. 25 MIN. Features Large current. High reliability. Marking Color code : White Applications Voitage class FE301-1 High speed switching Audio output rectifier in TV etc |
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FE301-1 | |
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Contextual Info: OMAP3530/25 Applications Processor www.ti.com SPRS507F – FEBRUARY 2008 – REVISED OCTOBER 2009 1 OMAP3530/25 Applications Processor 1.1 Features • • OMAP3530/25 Applications Processor: – OMAP 3 Architecture – MPU Subsystem • Up to 720-MHz ARM Cortex™-A8 Core |
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OMAP3530/25 SPRS507F 720-MHz 520-MHz TMS320C64x+ OMAP3530 | |
2SB1119Contextual Info: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 |
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2SB1119 -500mA -50mA 2SB1119 | |
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Contextual Info: TSDF2020W VISHAY Vishay Semiconductors 25 GHz Silicon NPN Planar RF Transistor Features • • • • • 1 Very low noise figure Very high power gain High transition frequency fT = 25 GHz Low feedback capacitance Emitter pins are thermal leads 4 2 3 16712 |
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TSDF2020W OT-343R D-74025 02-May-02 | |
MARKING SMD PNP TRANSISTOR F8
Abstract: transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8
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BF824W MARKING SMD PNP TRANSISTOR F8 transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8 | |
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Contextual Info: SN54LV541A, SN74LV541A OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS SCLS410I − APRIL 1998 − REVISED APRIL 2005 D <0.8 V at VCC = 3.3 V, TA = 25°C Typical VOHV Output VOH Undershoot >2.3 V at VCC = 3.3 V, TA = 25°C Support Mixed-Mode Voltage Operation on |
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SN54LV541A, SN74LV541A SCLS410I SN54LV541A | |
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Contextual Info: SN54LV541A, SN74LV541A OCTAL BUFFERS/DRIVERS WITH 3ĆSTATE OUTPUTS SCLS410I − APRIL 1998 − REVISED APRIL 2005 D <0.8 V at VCC = 3.3 V, TA = 25°C Typical VOHV Output VOH Undershoot >2.3 V at VCC = 3.3 V, TA = 25°C Support Mixed-Mode Voltage Operation on |
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SN54LV541A, SN74LV541A SCLS410I SN54LV541A | |
transistor c 5586
Abstract: TSC 7211 marking 651 sot26 TS9004 transistor 15478 A 68067 8467 transistor
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TS9004 OT-25 OT-26 TS9004 OT-26 300mA OT-25 transistor c 5586 TSC 7211 marking 651 sot26 transistor 15478 A 68067 8467 transistor | |
ACMD-6125Contextual Info: ACMD-6125 Band 25 Duplexer Data Sheet Description Features The Avago ACMD-6125 is a highly miniaturized duplexer designed for use in Band 25 1850.25 – 1914.75 MHz UL, 1930.25 – 1994.75 MHz DL handsets and mobile data terminals. • Miniature Size - 1.6 x 2.0 mm size |
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ACMD-6125 ACMD-6125 AV02-4214EN | |
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Contextual Info: 74SSTUB32866A www.ti.com SCAS837A – OCTOBER 2006 – REVISED NOVEMBER 2007 25-BIT CONFIGURABLE REGISTERED BUFFER WITH ADDRESS-PARITY TEST FEATURES 1 • Member of the Texas Instruments Widebus+ Family • Pinout Optimizes DDR2 DIMM PCB Layout • Configurable as 25-Bit 1:1 or 14-Bit 1:2 |
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74SSTUB32866A SCAS837A 25-BIT 14-Bit 74SSTUB32866A | |
mgdm 6 AContextual Info: Hi-Rel DC/DC CONVERTER MGDM-25 : 25W POWER Hi-Rel Grade Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation • 28Vdc input compliant with MIL-STD-704 D/E • Nominal power up to 25 W without derating • Wide temperature range : -40°C/+105°C case |
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MGDM-25 28Vdc MIL-STD-704 MGDM-25 250KHz FC98-024 mgdm 6 A | |
Vishay rt 055Contextual Info: RT55 Vishay Sfernice Wirewound Rheostat/Potentiometer FEATURES • 55 W at 25 °C • 40 W at 25 °C • CCTU 05-03B PA3 • Compliant to RoHS directive 2002/95/EC DIMENSIONS in millimeters ADAPTATION BOARD PANEL CUT OUT DETAILS Ø 10.5 2 holes Ø 5 7.6 |
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05-03B 2002/95/EC RT55-PA3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay rt 055 | |
BC807-40Contextual Info: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ |
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BC807-25 BC807-40 OT-23 BC817-25 BC817-40 OT-23 BC807-40 | |
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Contextual Info: SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a, e 0.0086 @ VGS = 10 V 62 0.012 @ VGS = 4.5 V 52 VDS (V) 25 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) 18 5 nC 18.5 |
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SUD50N025-09BP O-252 SUD50N025-09BPâ 08-Apr-05 | |
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HSL2-1808
Abstract: BAY6642
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BAY6642 1N6639 1N6643 HSL2-1808 HSL2-1808 BAY6642 | |
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Contextual Info: Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Diode BAV99W SOT-323 SWITCHING DIODE FEATURES 1. 25¡ À0. 05 mW Tamb=25℃ 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current 150 mA IF: Collector-base voltage 75 V VR: Operating and storage junction temperature range |
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OT-323 BAV99W OT-323 150mA | |
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Contextual Info: TMS320C5x, TMS320LC5x DIGITAL SIGNAL PROCESSORS SPRS030A – APRIL 1995 – REVISED APRIL 1996 D D D D D D D D D D D D D D D Powerful 16-Bit TMS320C5x CPU 20-, 25-, 35-, and 50-ns Single-Cycle Instruction Execution Time for 5-V Operation 25-, 40-, and 50-ns Single-Cycle Instruction |
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TMS320C5x, TMS320LC5x SPRS030A 16-Bit TMS320C5x 50-ns | |
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Contextual Info: SN54LV540A, SN74LV540A OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS SCLS409H − APRIL 1998 − REVISED APRIL 2005 D <0.8 V at VCC = 3.3 V, TA = 25°C Typical VOHV Output VOH Undershoot >2.3 V at VCC = 3.3 V, TA = 25°C 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 |
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SN54LV540A, SN74LV540A SCLS409H SN54LV540A | |
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Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking M P Absolute Maximum Ratings (Ta = 25°C) |
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MT3S150P SC-62 | |
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Contextual Info: P4SMA18A P4SMA18A DO-214AC SMA Color Band Denotes Cathode Device Marking: 18A 400 Watt Unidirectional Transient Voltage Suppressor Absolute Maximum Ratings (Note 1) T Symbol PPPM IPPM IFSM A = 25°C unless otherwise noted Parameter Value Units Peak Pulse Power Dissipation on 10/1000µs waveform |
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P4SMA18A DO-214AC P4SMA18A | |
c 337 25
Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
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Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 c 337 25 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337 | |
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Contextual Info: Oscillator specification: Custom designation: PTVC75669.001 SMD-VCXO 368,64M 4mm Supervision by: Date , Sign. : 14.07.09 U. Schweickert TYP: VCXO with 368,640000 MHz 1. Electrical Parameters Supply / Power: Supply Voltage: Max. Current Consumption @ 25 °C: |
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PTVC75669 12kHz PTVC75669 M003-168-ME01-000 | |
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Contextual Info: ◆Operating Voltage Range Single Cell : 1.2V ~ 10V ◆Input / Output Rail To Rail Operation ◆Gain Bandwidth : 550kHz ◆Slew Rate : 0.5V / S ◆Low Power Consumption : 100μA ◆SOT-25 Ultra Small Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES |
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550kHz OT-25 XC221A1200MR XC221A XC221A1100 XC221A XC221A1200 | |
Low Forward Voltage Diode
Abstract: Diode smd 86 DIODE SMD 88 smd symbols 1PS70SB82 88 diode Marking 85 diode marking 88 smd diode marking smd marking rd
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1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS70SB84 Low Forward Voltage Diode Diode smd 86 DIODE SMD 88 smd symbols 88 diode Marking 85 diode marking 88 smd diode marking smd marking rd | |