24V 20A MOSFET SWITCH Search Results

SSP7404NA

Abstract: MosFET
Contextual Info: SSP7404NA 35A, 30V, RDS ON 2.8 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.

toshiba c 2238

Abstract: TB7001FL MOSFT
Contextual Info: TB7001FL Preliminary TOSHIBA Multi Chip Module TB7001FL For high current and low voltage applications Synchronous buck converter module This product is a synchronous buck switching converter module. The additional components for DC-DC converter are a PWM control IC, an external inductor, and input and output capacitors.

Contextual Info: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application

Contextual Info: IRFHM8330PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 9.3 6.6 HEXFET Power MOSFET m 9.9 S S S D nC 25 G D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application

2SK3262-01MR

Contextual Info: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

2sk3262

Abstract: 2SK3262-01MR MOSFET 200v 20A n.channel
Contextual Info: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

2SK3262-01MR

Abstract: 2SK3262
Contextual Info: 2SK3262-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: IRFHM8326PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application

a1290

Abstract: K4204 2SK4204 2SK42 2SK4204LS ENA1290
Contextual Info: 2SK4204LS Ordering number : ENA1290 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4204LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: IRFHM8326PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 20 4.7 HEXFET Power MOSFET m 6.7 S S S G D nC 70 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application

Contextual Info: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application

Contextual Info: IRFHM8329PbF VDSS 30 V VGS max RDS on max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications  Charge and Discharge Switch for Notebook PC Battery Application

60T03GP

Abstract: 60t03gs 60T03 AP60T03GP 60T0 60t03g ap60t03 THV100
Contextual Info: AP60T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 12mΩ ID G 45A S Description Advanced Power MOSFETs from APEC provide the

MOSFET Module 24v 1000A

Contextual Info: PRELIMINARY YRH40.241 12-28V, 40A, DUAL REDUNDANCY MODULE Y-Series REDUNDANCY MODULE ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ For N+1 and 1+1 Redundant Systems Suitable for Power Supplies with HiccupPLUS Overload Behavior Dual Input with Single Output Minimal Losses - Mosfets Instead of Diodes

Contextual Info: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

IRF9310

Abstract: IRF9310TRPBF IRF9310PBF JESD47F IRF9310TR IRF p-CHANNEL MOSFET IRF 630 Datasheet ABD 630
Contextual Info: PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6   ' 4.6 mΩ 6   ' 6   ' *   ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits

Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

AN-994

Abstract: IRL3303 IRL3303L IRL3303S
Contextual Info: PD - 95578 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3303S l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3303LPbF IRL3303SPbF l l HEXFET Power MOSFET

Contextual Info: 2SK3218-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3218-01

Abstract: 2SK3219-01MR
Contextual Info: 2SK3219-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: PD - 97437 IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6   ' 4.6 mΩ 6   ' 6   ' *   ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits

irf9310

Contextual Info: PD - 97437A IRF9310PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) ID -30 V 6   ' 4.6 mΩ 6   ' 6   ' *   ' -20 (@TA = 25°C) A SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Resulting Benefits

spartan 3a

Abstract: SPARTAN-3 XC3S400 24v 12v 20A regulator circuit diagram power supply SAMSUNG MONITOR str panasonic 614 battery 10nF 50V X7R samsung 7 pin str for 24v 3 amp to 220 package Circuit diagram of Regulated Power supply 6V 5A EL7566 ISL6401
Contextual Info: HIGH PERFORMANCE ANALOG Power Management Application Guide for Xilinx FPGAs Using Switchers to Power Xilinx FPGAs and DDR Memory Increased gate counts and higher clock speeds in programmable logic ICs have resulted in higher current requirements while smaller device geometries are driving lower core supply voltages. Both