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IXYS Corporation IXYP24N100A4 IGBTs TO263 1KV 24A XPT
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TTI	IXYP24N100A4	Tube			300	1 - 10 - 100 - 1000 $6.66 10000 $6.66	Buy Now
IXYS Corporation IXTX24N100 MOSFETs 24 Amps 1000V
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TTI	IXTX24N100	Tube			300	1 - 10 - 100 - 1000 $24.45 10000 $24.45	Buy Now
IXYS Corporation IXFR24N100Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A
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TTI	IXFR24N100Q3	Tube			300	1 - 10 - 100 - 1000 $23.12 10000 $23.12	Buy Now
IXYS Corporation IXFN24N100 MOSFET Modules 1KV 24A
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TTI	IXFN24N100	Tube			10	1 - 10 $40.25 100 $40.25 1000 $40.25 10000 $40.25	Buy Now
IXYS Corporation IXFK24N100Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A
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TTI	IXFK24N100Q3	Tube			300	1 - 10 - 100 - 1000 $20.55 10000 $20.55	Buy Now

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24N100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
24N100 Abstract: 23N10 125OC Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC	PDF
transistor da 307 Abstract: 24N10 Contextual Info: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet RDSon = 390 mW in High Voltage ISOPLUS I4-PACTM 1 5 Features MOSFETs Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C	Original	24N100 24N100 transistor da 307 24N10	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 24N100 IXFX 24N100 VDSS ID25 RDS on Single MOSFET Die Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000	Original	24N100 24N100 247TM O-264	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF
Contextual Info: Advanced Technical Information IXFN 24N100 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 1000 V = 24 A = 0.39 W trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000	Original	24N100 OT-227 E153432	PDF
Contextual Info: IXFF 24N100 HiPerFETTM Power MOSFET in High Voltage ISOPLUS i4-PACTM ID25 = 22 A VDSS = 1000 V Ω RDSon = 390 mΩ 5 1 1 5 2 Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C IF25 IF90 diode TC = 25°C	Original	24N100	PDF
z 607 ma Contextual Info: IXFK 24N100 IXFX 24N100 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000	Original	24N100 24N100 247TM O-264 z 607 ma	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF
24N100 Abstract: 24N10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C	Original	24N100 ISOPLUS247TM 24N10	PDF
24N10 Contextual Info: AdvancedTechnical Information 24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C	OCR Scan	IXFK24N100 24N100 to150 24N10	PDF
24N100 Abstract: "SOT-227 B" dimensions 125OC Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC	PDF
24N100 Abstract: 23N100 Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 227TM	PDF
Contextual Info: Advanced Technical Information HiPerFETTM IXFF 24N100 ID25 = 22 A VDSS = 1000 V Power Mosfet Ω RDSon = 390 mΩ in High Voltage ISOPLUS i4-PACTM 1 5 MOSFETs Features Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C	Original	24N100 24N100	PDF
24n100f Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS on = 0.39 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr	Original	24N100F 247TM 728B1	PDF

Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs IXFR 24N100 V¥ ISOPLUS247™ ^D25 = 1000 V 22 A = _ 0.39 ß DS on “ “ dss P (Electrically Isolated Back Surface) trr <250 ns Single MOSFET Die Symbol Test Conditions v Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 M£2	OCR Scan	24N100 ISOPLUS247TM Cto150 00A/tis, 247TM	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF
24N100F Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs IXFN 24N100F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	24N100F OT-227 E153432 728B1 24N100F	PDF
Contextual Info: □ I X Y Advanced Technical Information S IXFK 24N100 IXFX 24N100 HiPerFET Power MOSFETs V,DSS Single MOSFET Die ttS Maximum Ratings Test Conditions V DSS v DGR Tj = 25°C to 150°C Tj = 25°C to 150°C; RGS = 1 Mß VGS V GSM Continuous Transient ^D25	OCR Scan	24N100 PLUS247â	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ID25 = 22 A ISOPLUS247TM Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	24N100 ISOPLUS247TM 247TM	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 1000 V ID25 = 22 A RDS on = 0.39 Ω ≤ 250 ns trr IXFR 24N100 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 24N100 247TM	PDF
Contextual Info: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM (IXTX) 1000 1000 V V ±20 ±30 V V G	Original	24N100 247TM IXFK24N100/IXFX24N100 405B2	PDF
ixfk24n100 Contextual Info: IXTX 24N100 Power MOSFET VDSS ID25 Single MOSFET Die = 1000 V = 24 A = 0.40 Ω RDS on trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR PLUS 247TM	Original	24N100 247TM IXFK24N100/IXFX24N100 405B2 ixfk24n100	PDF
24N100 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM ID25 = 22 A Electrically Isolated Back Surface RDS(on) = 0.39 W Single MOSFET Die trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	24N100 ISOPLUS247TM 247TM	PDF
1522s Abstract: D 819 mss1000 Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR 24N100 V,DSS = 1000 V = 22 A ISOPLUS247™ ^D25 Electrically Isolated Back Surface ^ D S (o n )= 0.39 Q trr < 250 ns Single MOSFET Die ÛB: Maximum Ratings Symbol Test Conditions V Tj = 25°C to 150°C	OCR Scan	24N100 ISOPLUS247â T0-247AD 1522s D 819 mss1000	PDF

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24N100 Price and Stock

IXYS Corporation IXYP24N100A4

IXYS Corporation IXTX24N100

IXYS Corporation IXFR24N100Q3

IXYS Corporation IXFN24N100

IXYS Corporation IXFK24N100Q3

24N100 Datasheets Context Search

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