24JUN9 Search Results

Contextual Info: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. 19 RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. , 4 5 6 3 2 19 LOC ALL RIGHTS RESERVED. AF D I ST REVISIONS 50 DE SC RI PT IO N RELEASED P0IN7 OF MEASUREMENT, -1 LOCATED TO PRODUCTI ON RG 24JUN97 APPROXIMATELY

Contextual Info: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization

ES3001

Contextual Info: Tem ic BAQ333.BAQ335 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current

Contextual Info: Tem ic BYG21 S e m i c o n d u c t o r s Fast Silicon Mesa SMD Rectifier Features • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time • Good switching behaviour • Wave and reflow solderable

Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current

1N4148 Micro MELF

Abstract: 1n4148 melf package
Contextual Info: Tem ic MCL4148.MCL4448 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the devices 1N4148 and 1N4448 respectively •

Ip200mA

Abstract: 600L100
Contextual Info: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1

Contextual Info: Tem ic SÌ9717CY S e m i c o n d u c t o r s Battery Disconnect Switch Features • 6- to 18-V O p e ra tio n • S e p a ra te L o g ic V o ltag e In p u t • U n d e rv o ita g e L o c k o u t LTVL @ V l = 3 V • S h u td o w n C o n tro l C a p a b ility

Contextual Info: Tem ic TZMC. S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization

Telefunken tdr power ic

Contextual Info: Tem ic M44C092/M44C892 S e m i c o n d u c t o r s 5 5.1 Electrical Characteristics Absolute Maximum Ratings Voltages are given relative to V js '. .PWwswtera.: Supply voltage Input voltage on any pin Output short circuit duration Operating temperature range

Contextual Info: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C

Telefunken u 439

Contextual Info: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2%

DO 213

Contextual Info: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter

1N5400-1N5408

Abstract: APPLICATION DIODE 1N5406 LITEON 1N5406 1n5406 liteon 1N54001 diode 1n5406 1n5408 BL 1n54001n5408 1N5401 Vishay DIODE 1N5402 3a
Contextual Info: 1N5400–1N5408 Vishay Lite–On Power Semiconductor 3.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 200A peak D Low reverse leakage current D Plastic material – UL Recognition

UG1001

Abstract: UG1002 UG1003 UG1004 UG1005
Contextual Info: UG1001–UG1005 Vishay Lite–On Power Semiconductor 1.0A Ultra–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Ultra–fast switching for high efficiency High current capability and low forward voltage

BYT86

Contextual Info: BYT86 Vishay Telefunken Ultra Fast Recovery Silicon Power Rectifier Features D D D D D Multiple diffusion High voltage High current Ultra fast forward recovery time Ultra fast reverse recovery time 14282 Applications Fast rectifiers in S.M.P.S, freewheeling and snubber

BY448

Abstract: BY458
Contextual Info: BY448.BY458 Vishay Telefunken Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package Applications 94 9539 High voltage rectifier Efficiency diode in horizontal deflection circuits Absolute Maximum Ratings Tj = 25_C Parameters

SF4001

Abstract: SF4002 SF4003 SF4004 SF4005 SF4006 SF4007
Contextual Info: SF4001.SF4007 Super Fast Soft Recovery Rectifier Features D D D D Glass passivated Hermetically sealed axial leaded glass envelope Low reverse current High reverse voltage Applications Switched mode power supplies High–frequency inverter circuits 94 9539

1N4154

Abstract: LS4154
Contextual Info: LS4154 Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4154 D Quadro Melf package Applications 96 12009 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage

TELEFUNKEN diode

Abstract: 1N4154 LL4154
Contextual Info: LL4154 Silicon Epitaxial Planar Diodes Features D Electrical data identical with the device 1N4154 Applications Extreme fast switchess 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current

1N4148

Abstract: 1N4448 LL4148 LL4448
Contextual Info: LL4148.LL4448 Silicon Epitaxial Planar Diodes Features D Electrical data identical with the devices 1N4148 and 1N4448 respectively Applications Extreme fast switches 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage

1N4154

Abstract: MCL4154
Contextual Info: MCL4154 Silicon Epitaxial Planar Diode Features D Electrical data identical with the device 1N4154 D Micro Melf package Applications Extreme fast switches 96 12315 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage

Contextual Info: UG3001-UG3005 Vishay Lite-On Power Semiconductor 3.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • U ltra -fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

AMP Spec 109-21-5

Contextual Info: 108-1372 Product Specification 16Aug04 Rev A EC 0R00-0054-04 2 mm AMP-LATCH* Ribbon Cable Receptacle Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for AMP-LATCH* 2 mm ribbon cable receptacle connector. Insulation displacement contacts terminated to 1 mm centerline ribbon