24JUL14 Search Results

Contextual Info: F-214 Rev 24JUL14 FTSH–110–01–L–DV FTSH–120–01–F–DV FTSH–125–01–L–DV–EJ (1,27 mm) .050" SMT MICRO HEADER SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?FTSH Insulator Material: Black Liquid Crystal Polymer

AL343

Contextual Info: F-214 Rev 24JUL14 FTSH–120–02–L–D FTSH–120–01–L–D–RA FTSH–125–01–F–D (1,27 mm) .050" FTSH SERIES THROUGH-HOLE MICRO HEADER SPECIFICATIONS Impedance matched for high speed applications (Mated with CLP Series) Mates with: FFSD, FFTP, CLP, FLE

Contextual Info: T55 www.vishay.com Vishay Polytech Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT , Molded Case, High Performance Polymer Type FEATURES • Ultra-low ESR • Molded case available in 5 case codes • Terminations: cases J, P, and A: 100 % tin

Contextual Info: VS-GB600AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 600 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VSMF9700X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability

Contextual Info: VS-GB400AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: VS-40L15CTSPbF, VS-40L15CT-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A TO-263AB D2PAK FEATURES TO-262AA Base common cathode 2 • • • • • • Base common cathode 2 • 2 1 Common 3 Anode cathode Anode 2

Contextual Info: VS-GB400AH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • 10 s short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE on with positive temperature coefficient

Contextual Info: VS-20L15TSPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES • 125 °C TJ operation VR < 5 V Base cathode 2 • Single diode configuration • Optimized for OR-ing applications • Ultralow forward voltage drop

Contextual Info: VS-GB300AH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 s short circuit capability • VCE on with positive temperature coefficient

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 COLOR: BLACK PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS Recommenced Panel Cut-out Thickness = 1,95 ±0,25

VSSAF3N50-M3/6B

Contextual Info: VSSAF3N50 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm TMBS SlimSMATM • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency

Contextual Info: SUN12A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.68Ω (Typ.)  Low gate charge: Qg=38nC (Typ.)  Low reverse transfer capacitance: Crss=14.5pF (Typ.)  Lower EMI noise

Contextual Info: VSSAF5N50 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS SlimSMATM • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency

Contextual Info: SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.55Ω (Typ.)  Low gate charge: Qg=38nC (Typ.)  Low reverse transfer capacitance: Crss=15pF (Typ.)  Lower EMI noise  RoHS compliant device