241 TRANSISTOR Search Results

CA3KN31BD

Abstract: LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
Contextual Info: CONTROL GEAR/DIN TERMINALS AC contactors page 239 Time delay control blocks page 240 DIN rail terminals page 248 Thermal overload relays page 239 Auxiliary contact blocks 241 Coil suppressor modules 241 Contact blocks 239-241, 244 Contactors 239-241 Control relays

241A

Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
Contextual Info: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

Contextual Info: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

d405

Abstract: 2SC4574 D406 transistor D406 2SD2170
Contextual Info: Transistors 2SD2170 2SC4574 96-241–D405 (94L-686-D406) 313

Contextual Info: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1

T0-220B

Abstract: pj30 241B BD241 BD241A BD241B 241a
Contextual Info: NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD -241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241, BD 241A AND BD 241B ARE COMPLEMENTARY TO

BO 241 A

Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
Contextual Info: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A

BF241

Abstract: IC 41 BF bf240 TFK 241 bf 241 Kleine transistor bf UCB 10 Scans-0010445
Contextual Info: BF 240 * BF 241 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: BF 240: G eregelte AM- u. FM -Verstärkerstufen in Em itterschaltung BF 241 : AM- u. FM -Verstärkerstufen in Em itterschaltung Applications: BF 240: C ontrolled AM and FM am p lifier stages in com m on em itter configuration

BF241

Abstract: BF240 K241 BF 225 transistors bf CB-76on Transistors 1hz
Contextual Info: N P N S IL IC O N T R A N S IS T O R S , E P IT A X IA L P L A N A R BF 241 T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X BF 240 and BF 241 transistors are intended fo r use in AM-FM if amplifiers o f radio receivers. Les transistors B F 240, B F 241 sont destinés aux am plifica­

2SA1241

Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )

BD242C

Abstract: BD242 BD242A BD242B bd242 TRANSISTOR
Contextual Info: BD242/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 241/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Em itter Voltage : BD242 Rating Unit - 45 V : BD242A - 60

Copper Interconnect on GaAs pHEMT by Evaporation Process

Contextual Info: Copper Interconnect on GaAs pHEMT by Evaporation Process Kezia Cheng Skyworks Solutions Inc. 20 Sylvan Road, Woburn, MA. kezia.cheng@skyworksinc.com 781 241-2821 Keywords: … pHEMT, Copper, Evaporation Abstract Copper (Cu) interconnects have been quite successful

2SA1241

Abstract: 2SC3076
Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
Contextual Info: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243

Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing

Contextual Info: Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing Kezia Cheng Skyworks Solutions Inc., 20 Sylvan Road, Woburn, MA 01801 kezia.cheng@skyworksinc.com 781 241-2821 Keywords: Ohmic Metal, Contact Resistance, Electrochemical, Galvanic, Erosion

PDTC113EU

Abstract: PDTA123EE PDTA144EE PUMB16 PEMH15 PEMD4 PDTC113ZU PDTC114EU PUMH15 PUMH20
Contextual Info: Semiconductors Philips’ Resistor-Equipped Transistor RET portfolio Double Resistor-Equipped Transistors SOT457 (SC-74) SOT363 (SC-88) SOT666 Key features • Extensive range - 241 products already released - ~ 400 products will be available in 2004 • Single or dual RETs with large choice of resistor combinations

transistor a1241

Abstract: A1241 2SA1241 2SC3076 2SA124
Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SW ITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 /us (Typ.)

transistor bf 760

Abstract: transistor bc 241 transistor bf 241 BF241 TRANSISTOR bf241 mosfet bf 66 transistor B 722 transistor bf 237 telefunken ta 400 241 transistor
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C D • öSEGG^b G0DS177 ^ ■ ALGG w * * -—- BF 240 •BF 241 TT id ilFy K lK lK l e le c tro n ic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 240: Controlled AM and FM amplifier stages In common emitter configuration

SMD Transistor 1c

Contextual Info: • fl235b05 GO'ìbbS1! 241 SIEMENS Voltage Regulator TLE 4274 GSV33 Preliminary Data Sheet Features • • • • • Output voltage tolerance < ± 4 % Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics

transistor a1241

Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029
Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)

transistor a1241

Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)

transistor tt 2170

Abstract: TT 2170 660 TG 11823 die 660 tg diode transistor t 2180 High power audio transistor equivalent table 241B MSM9140 19652
Contextual Info: MSSI121/241/241B MOSEL VITELIC INSTANT VOICE ROM Features Single power supply can operate at 2.4V through 6V. Current output can drive 8 ohm speaker with a transistor, Vout can drive buzzer directly. The voice content is stored for 7-12 seconds for SI121 13-24 for SI241/241B including mute

Contextual Info: T O SH IB A 2SA1241 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : V cE (sat) = -0 .5 V (Max.) (IC = - 1 A ) Excellent Switching Time : tstg = 1.0 jl/.s (Typ.)

Electron Radiation as an Indicator of Gold Nodule Defect during E-beam Evaporation

Contextual Info: Electron Radiation as an Indicator of Gold Nodule Defect during E-beam Evaporation Kezia Cheng Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA. kezia.cheng@skyworksinc.com 781 241-2821 Keywords: … Back scattered electron, E-beam evaporation, Gold nodules, Gold spitting