24 TRANSISTOR MAKING Search Results

nec 0882

Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

NEC E170632

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL6448AC33-24 26 cm 10.4 inches , 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle DESCRIPTION NL6448AC33-24 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising

th 20594

Abstract: HA 17723 30976 1982U 22024U
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.

3SK242

Abstract: SK242
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz

NEC k 1995 transistor

Abstract: 3SK176A rf id based home appliances control
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

celeritek LNA

Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz

LM7809 application notes

Abstract: APPLICATION NOTES LM7812 LM7805ACT LM7809CT LM78XX LM7805 5V 24V LM7824 voltage regulator circuit diagram LM7809ct pin out lm7815act lm7805ac
Contextual Info: LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator Features • • • • • General Description Output Current up to 1A Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24 Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating Area Protection

lm7805 12v to 5v 3a

Contextual Info: LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator Features • • • • • General Description Output Current up to 1A Output Voltages of 5, 6,8, 9, 10, 12, 15, 18, 24 Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating Area Protection

TPCP8101

Contextual Info: TPCP8101 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type U-MOS III TPCP8101 Notebook PC Applications Portable Equipment Applications Unit: mm 0.33±0.05 0.05 M A Small footprint due to small and thin package • • Low drain-source ON-resistance: R DS (ON) = 24 mΩ (typ.)

K12J60U

Abstract: TK12J60U k12j60 transistor tc 144 SC-65 K12J
Contextual Info: TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ TK12J60U Switching Regulator Applications Unit: mm VDSS 600 V 5.45 ± 0.2 Gate-source voltage VGSS ±30 V (Note 1) ID 12 Pulse (t = 1 ms) (Note 1) IDP 24 A 1 Drain power dissipation (Tc = 25°C)

2sb1569a

Contextual Info: 2 S B 1 27 5 / 2 S B 1 2 3 6 A / 2 S B 1 5 6 9 A / 2 S B 1 186A Transistors 2 S D 2 2 1 1 / 2S D 1 9 1 8 / 2S D 1 8 5 7 A / 2 S D 24 00A / 2S D 17 63A I Power Transistor — 160V, —1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te maximum ratings ( T a = 2 5 t )

TRANSISTOR A850

Abstract: transistor ti pb3 Kyocera Kinseki LC65104 vinco power modules LC65102A LC65104A 0LA12 POE-400 POe400
Contextual Info: Ordering number: EN3653B CMOS LSI LC65102A, LC65104A 4-bit Single-chip Microprocessors OVERVIEW The LC65102A and LC65104A are 4-bit, single-chip microprocessors that incorporate 2 Kbyte ROM and 128 x 4-bit RAM , and 4 Kbyte ROM and 256 x 4-bit RAM , respectively, making them ideal for timer

transisTOR C124

Abstract: A102 TRANSISTOR F3W-C124 F3W-C164-D F3W-A102-D f3w OMRON PRC03-12A10-4F10 F3W-A062 F3W-C044 F3W-A082-D
Contextual Info: Line Sensor F3W Detects Objects in a Variety of Lines and is Ideal for Picking Instruction Purposes F3W-A: Detects a wide area with a 10-mm optical pitch. F3W-A/F3W-C: Incorporates the industry’s first remote external check function making it possible to check sensor errors.

7B252

Abstract: GSC2127 7B152
Contextual Info: ISSUED DATE :2006/02/24 REVISED DATE : GSC2127 7 5 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GSC2127 series of positive, linear regulators feature low quiescent current 45 A typ. with low dropout voltage, making then ideal for battery applications.

G5U2167

Contextual Info: ISSUED DATE :2006/02/24 REVISED DATE : G5U2167 7 5 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The G5U2167 series of positive, linear regulators feature low quiescent current 45 A typ. with low dropout voltage, making then ideal for battery applications.

pwm hho

Abstract: a21sc TR4943 pwm for hho LC66404A A21S JLC6640X LC66P408 yP31 P41 transistor
Contextual Info: Ordering number : EN 3492 CMOS LSI LC66P408 4-bit Microcontroller with Built-in PROM OVERVIEW The LC66P408 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for prototyp­ ing and software development and testing.

murata cst

Abstract: TR4943 27128 ROM pin configuration
Contextual Info: Ordering number:ENN3492 CMOS IC LC66P408 4-bit Microcontroller with Built-in PROM Overview Package Dimensions The LC66P408 is a 4-bit microcontroller with a built-in 8 Kbyte PROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for prototyping and

a21sc

Abstract: Transistor BFT 42 DC42S A21S Edd 44 p60 hall LC66E408
Contextual Info: Ordering number: EN ¿K3493 CMOS LSI LC66E408 4-bit Microcontroller with Built-in EPROM Preliminary OVERVIEW The LC66E408 is a 4-bit microcontroller with a built-in 8 Kbyte EPROM. It is compatible with the LC6640X series mask ROM devices, making it ideal for program

transistor c 4793

Abstract: GTM 5010 52034 A 68067 transistor c 5586 GQ2143
Contextual Info: ISSUED DATE :2005/01/24 REVISED DATE : GQ2143 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2143 of positive, linear regulators feature low quiescent current 35 A typ. with low dropout voltage, making them ideal for battery applications.

transistor WT4

Abstract: WT4 Transistor S5R5 TR4943 LC66P516 a1w* transistor P-5W 303A capacitor
Contextual Info: O rdering num ber: EN3114A CMOS LSI LC66P516 No. 3114A 4-bit Microcontroller with Built-in PROM /• / OVERVIEW PINOUTS ■/ .*• The LC66P516 is a 4-bit microcontroller with a built-in 16 Kbyte PROM. It is compatible with the LC665XX series mask ROM devices, making it ideal for prototyp­

dental image sensor x-ray

Contextual Info: IMAGE SENSOR CCD area image sensor S8984, S8985-02 Front-illuminated FFT-CCDs for X-ray imaging S8984 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8984 has about 2 mega 1700 x 1200 pixels each of which is 20 × 20 µm. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making

Contextual Info: IMAGE SENSOR CCD area image sensor S8984, S8985 Front-illuminated FFT-CCDs for X-ray imaging S8984 is an FFT-CCD image sensor ideal for intra-oral X-ray imaging in dental diagnosis. S8984 has about 2 mega 1700 x 1200 pixels each of which is 20 µm. The fiber optic plate (FOP) used as an input window is as thin as 1.5 mm but highly resistant to X-ray irradiation, making S8984