24 TRANSISTOR MAKING Search Results

DICLAD522T

Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and

F1 J37

Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm

nec 0882

Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Contextual Info: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

d1763

Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of

2SD843

Contextual Info: TOSHIBA 2SD843 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD843 INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS 1 2 001 05-24 - TOSHIBA 2SD843 ELECTRICAL CHARACTERISTICS Ta = 25°C 2 2 001 05-24 - COLLECTOR-EMITTER VOLTAGE hpE Vq e

NEC E170632

Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL6448AC33-24 26 cm 10.4 inches , 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle DESCRIPTION NL6448AC33-24 is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) comprising

th 20594

Abstract: HA 17723 30976 1982U 22024U
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . (Unit: mm) FEATURES • P- 1 = 24 dBm TYP.

3SK242

Abstract: SK242
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz

NEC k 1995 transistor

Abstract: 3SK176A rf id based home appliances control
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

k2550

Abstract: 2SK2550
Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.)

celeritek LNA

Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz

TPCF8102

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz

Contextual Info: TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.)

2SK30

Abstract: 2SK3051 K3051
Contextual Info: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)

TPCF8102

Abstract: A2430
Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

k2550

Contextual Info: 2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2550 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.)

TPC8305

Contextual Info: TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.)

2SK3051

Contextual Info: 2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3051 Chopper Regulator DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) l High forward transfer admittance : |Yfs| = 27 S (typ.)

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

TPCF8102

Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)

LM7809 application notes

Abstract: APPLICATION NOTES LM7812 LM7805ACT LM7809CT LM78XX LM7805 5V 24V LM7824 voltage regulator circuit diagram LM7809ct pin out lm7815act lm7805ac
Contextual Info: LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator Features • • • • • General Description Output Current up to 1A Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24 Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating Area Protection

LM78XX

Abstract: LM7810AC TIP42 applications LM7805ACT LM7809CT lm7805ac lm7812 LM7806CT LM7808CT LM7812CT
Contextual Info: LM78XX/LM78XXA 3-Terminal 1A Positive Voltage Regulator Features • • • • • General Description Output Current up to 1A Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24 Thermal Overload Protection Short Circuit Protection Output Transistor Safe Operating Area Protection