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    23YW Price and Stock

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    Microchip Technology Inc MIC4423YWM

    3A Low Side Dual Inv Gate Drvr SOIC-8
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    Master Electronics MIC4423YWM
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    Avnet Americas MIC4423YWM Tube 8 Weeks 235
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    Mouser Electronics MIC4423YWM
    • 1 $2.43
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    • 100 $1.84
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    Newark MIC4423YWM Bulk 250
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    Microchip Technology Inc MIC4423YWM Tube 29 Weeks
    • 1 $2.43
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    • 100 $1.84
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    Microchip Technology Inc MIC4423YWM-TR

    3A Low Side Dual Inv Gate Drvr SOIC-8
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    Master Electronics MIC4423YWM-TR
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    Avnet Americas MIC4423YWM-TR Tape & Reel 8 Weeks 1,000
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    Mouser Electronics MIC4423YWM-TR
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    Newark MIC4423YWM-TR Tape & Reel 1,000
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    Microchip Technology Inc MIC4423YWM-TR Tape & Reel 29 Weeks
    • 1 $2.89
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    Bristol Electronics MIC4423YWM-TR 876 1
    • 1 $2.50
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    Vyrian MIC4423YWM-TR 3,160
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    Panduit Corp NWSLC2-3Y-WH

    WHITE CABLE IDENTIFICATION SLEEVE FOR 3MM SIMPLEX CABLE, 2"" LENGTH, 100 PER PACK - Bulk (Alt: NWSLC2-3Y-WH)
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    Avnet Americas NWSLC2-3Y-WH Bulk 14 Weeks 1,000
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    Sager NWSLC2-3Y-WH 1,000
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    SG Micro Corp SGM5223YWQ10/TR

    Analog Switch Dual SPDT 10-Pin WQFN T/R - Tape and Reel (Alt: SGM5223YWQ10/TR)
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    Avnet Americas SGM5223YWQ10/TR Tape & Reel 12 Weeks 3,000
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    SMC Corporation of America VQZ342-3YW1-02

    VALVE, 3 PORT BODY PORTED SOLENOID, VQZ300 SERIES
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    RS VQZ342-3YW1-02 Bulk 5 Weeks 1
    • 1 $60.69
    • 10 $58.26
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    23YW Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9103, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power


    Original     		gsm9103-30v/-3ot-23-3llane11 PDF

    SPN1423

    Abstract: SPN1423S32RG 23YW
    Contextual Info: SPN1423 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn1423spn1423s32rg23yw PDF

    ENHANCEMENT MOSFET

    Abstract: SPN1423 SPN1423S32RG
    Contextual Info: SPN1423 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		spn1423enhancement mosfetspn1423s32rg PDF