23JUL07 Search Results

Contextual Info: Tyco Electronics Product Specification 108-5667 ü f f i& Í S 23JUL07 Rev. D4 0 2 5 /0 9 0 1 I/O CONNECTOR 1. Scope: 1.1 C o n te n ts T h is s p e c ific a tio n c o v e rs th e re q u ire m e n ts f o r p ro d u c t p e rfo rm a n ce , t e s t m e th o d s and q u a lity a s s u ra n c e p ro v is io n s o f

NTCLS100E

Abstract: NTCLE400E3 NTCLE400
Contextual Info: 2381 641 2/3/4. Vishay BCcomponents NTC Thermistors, Special Long Lead Sensors FEATURES • Accurate over wide temperature range • High stability • Excellent price/performance ratio • High adhesive strength between PVC wire and the encapsulating laquer

VISHAY Bar code label

Contextual Info: VLMG21. Vishay Semiconductors Standard Mini SMD LED FEATURES • SMD LEDs with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • IR reflow soldering • Available in 8 mm tape

Si1905BDH

Contextual Info: SPICE Device Model Si1905BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiA419DJ

Contextual Info: SPICE Device Model SiA419DJ Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74888

Contextual Info: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

AN609

Abstract: Si7411DN
Contextual Info: Si7411DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

S-71493

Abstract: Si7848BDP
Contextual Info: SPICE Device Model Si7848BDP Vishay Siliconix Dual N-Channel 40V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4340DY

Contextual Info: SPICE Device Model Si4340DY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

69-206

Abstract: 13005-2 8541 69206 130052 7930 AN609 Si7366DP
Contextual Info: Si7366DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

c 3927

Abstract: MOSFET 7121 AN609 Si7384DP
Contextual Info: Si7384DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

69156

Abstract: A 69156
Contextual Info: SPICE Device Model SUD50NP04-145 Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4308DY

Contextual Info: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device

74164

Abstract: 74164 APPLICATION Si4446DY
Contextual Info: SPICE Device Model Si4446DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4308DY

Abstract: on 398
Contextual Info: SPICE Device Model Si4308DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: FP Vishay Dale Metal Film Resistors, Industrial, Flameproof FEATURES • Small physical size Pb-free • Low cost Available • FP resistors have the ability to withstand overloads up to 100 times rated power without e3 any trace of flame • Exceptional frequency characteristics

C 4977

Abstract: ON 4977 SUP40N25-60
Contextual Info: SPICE Device Model SUP40N25-60 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si7848bdp

Abstract: 4556S
Contextual Info: SPICE Device Model Si7848BDP Vishay Siliconix Dual N-Channel 40V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SPICE Device Model SiA913DJ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

6903

Abstract: AN609 Si7344DP 373386
Contextual Info: Si7344DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model SiA917DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SC75

Abstract: SC-75 SiP4282A
Contextual Info: New Product SiP4282A Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282A is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device