23JAN97 Search Results

BF966S

Abstract: BF966SA BF966SB
Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance

BF966

Abstract: BF966S BF966SA BF966SB
Contextual Info: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance

Schaffer

Abstract: MS24 BAR63-03W 100PF 70MM harmonica
Contextual Info: A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 3 3 D u a l - B a n d T r an s m i t - R ec e i v e S w i t c h R F & P r o t e c ti o n D e v i c e s Edition 2006-10-11 Published by Infineon Technologies AG,

BF966S

Contextual Info: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes

proj96

Abstract: AN033 70MM BAR63-03W BAR64-03W BAR64-05 BAR80 V-66 harmonica infineon gsm
Contextual Info: Application Note No. 033 Discrete & RF Semiconductors Dual-Band Transmit-Receive Switch This application note covers transmit-receive switch solutions for dualband/mode systems and applies specifically to systems where an octave separates the two bands. A GSM and PCN mobile telephone handset example

Contextual Info: 4 T H IS DRAW ING IS U N PU BLISH ED . C CO PYRIG HT 2 3 | RELEASED FOR P U B LIC A TIO N BY AW > INCO RPO RATED. 10 1 uoc . 10 DR klG H T S RESER VED. REVISIONS 01 PERFORMANCE SPECIFICATIONS (V d d = + 5 V ± 5 % (TYPICAL VALUES @VDD=+5V, TA2 3 ± 3 °C )