23A33T4 Search Results

3q marking diode

Abstract: BAT54C BAT54A 33T4 BAT54S BAT54S dc BAT-54A
Contextual Info: 23A33T4 00G0722 n s BAT54A; C; S SCHOTTKY BARRIER DIODES BAT54A dual diodes, common anode BAT54C dual diodes, common cathode and BAT54S dual diodes, in series M arking PACKAGE O UTLIN E D ETAILS ALL D IM EN SION S IN mm BAT54A - 42 BAT54C - 43 BAT54S - 44

in750 diode

Abstract: 1N9148 IN750 1s1555 diode izk 1n758 zener 1n750 1S1555 in750 zener diode 1N751 izk 1N4150
Contextual Info: DO-35 4 = NOTÉS: 1. CATHODÉ IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DIM MIN MAX A 25,40 - B 3,03 4,44 C D 0,46 0,56 1,52 2,29 DIODES AMMO PACK DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified Type

CSB856

Contextual Info: CSB856 CSB856 PNP PLASTIC POWER TRANSISTOR Low frequency Power Amplifier. PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L * DIM A B C E F G H J K L M N MIN 14.42 9,S3 3,56 MAX 16.51 10.67 4.83 0.90 1.15 1.40 3,75 3,68 2.29 2,79 2,54 3.43 0,56

Contextual Info: BF457, BF458, BF459 BF457,458,459 NPN PLASTIC POWER TRANSISTORS Video O utput Stages of TV Sets, for A F Output Stages with a High Operating Voltage and as Driver Transistors in Horizontal Deflection Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

2N4248

Abstract: 2N4142 transistor 2N4248 2N4143 CIL157 CIL157B CIL246 CIL258 CIL261 CIL223
Contextual Info: TO-106 EPOXY PACKAGE TRANSISTORS PNP Type vceo (V) Mir V EBO (V) Min CIL261 100 100 5.0 C1L251 80 80 2N42S4A 60 CtL241 V CBO No. (Ta=25°C, U nless Otherwise Specified) Electrical Characteristics Maximum Ratings (V) Min IcBO • m e hFE V CB lc (mA) & V CE

CMBT5400

Contextual Info: HIGH VOLTAGE TRANSISTOR P-N -P transistor M arking CMBT5400 = K? PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

BSR16

Abstract: BSR15
Contextual Info: BSR15 BSR16 CD1L SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors Marking BSR15 = 17 BSR16 = T8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0 .1 4 0.09 0.48 0.38 L 'S 3 Pin configuration 0.70 0.50 1 1.4 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR

Contextual Info: CMBT5401 SILICON P-N -P HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT5401 = 2L PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm _3 .0_ 2.8 0.14 0.48 0.38 3 Pin configuration BASE EMITTER COLLECTOR 2.6 2.4 _1.02 o.sr 0.60 0.40 _2 .00_ ABSOLUTE MAXIMUM RATINGS

Contextual Info: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN

Contextual Info: DO-35 Zener Diodes 500 mW E le c tric a l C h a ra c te ris tic s (A t Ta=25°C, U n le ss O th e rw is e S p e cifie d ) Type No. min V ZT r ZT at lZT at lZT nom max (V) 'zt r ZK 'z k a t !z k max max (Ohm) (mA) (Ohm) (mA) Temp. Coeff. of 1 Zener Voltage

23A33T4

Contextual Info: CSD1563A CSD1563A NPN PLASTIC POWER TRANSISTOR Complementary CSB1086A Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2 .25 TYP. E F 0.49 0 .75 G 4.5 TYP. L 15.7 TYP. M

BZX 850 5V1

Contextual Info: BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES Low power general purpose voltage regulator diodes P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ 2.8 0.14 0.48 038 4* 3 2.6 2.4

MJE340

Abstract: MJE340 b c e MJE350
Contextual Info: CDÎl MJE340 MJE340 NPN PLASTIC POWER TRANSISTOR Complementary MJE350 High Voltage General Purpose Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM "V 7.4 7.8 10.8 B 10.5 C 2A 2.7 0.7 0.9 2 .2 5 TYP. E F 1­ 2­ . 3- MAX. A 0.49 | 0 .7 5

CSA1162

Contextual Info: 23633*14 DOOOab? 23M LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAG E O UTLIN E D ETA ILS ALL D IM EN SIO N S IN m m Marking CSA1162Y-3E CSA1162GR G —3F _3.0_ 3 Pin configuration 1 = BASE 2 = EM ITTER 3 = C O L LE C T O R 0.48

B963

Abstract: CBR745DT
Contextual Info: CBR745DT Single Chip Schottky Barrier Rectifier suited for SMPS and High Frequency DC to DC Converters I-£ h E V “fhr a iL i DIM A B C D E F G H J K L M N MIN 14.42 9,63 3,56 MAX 16.51 10.67 4.63 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0^6 12.70 14.73

Contextual Info: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: GENERAL PURPOSE TRANSISTOR P -N -P transistor M ark in g P A C K A G E O U T L IN E D E T A IL S CM BT4125 = 5D ‘ A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S Collector-base voltage open emitter

2N3550

Abstract: BC177 pnp transistor BCY79-9 2N2906A 2N2907A 2N3120 2N3496 2N3497 2N3505 2N3547
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS PNP M axim um R atin gs Type No. 2N3497 2N3496 2N290SA VCBO (V) Min 120 80 60 VCEO (V) Min V EB0 (V) Min 120 5 60 60 5 5 Electrical Characteristics 'cBO (MA) M ax 0.100 0.100 0.010 VCB (V) hFE 60 60 5 0.010 90 50 50

Contextual Info: SILICON EPITAXIAL m PH 3568 TRANSISTOR MPtt TO-92 C8 E GENERAL PURPOSE SNITCHING TRANSISTORS ABSOLUTE MAXINtIN RATINGS TA = 25 deg 0 RATING SYMBOL VALUE UNIT .Collector Emitter Voltage VCEO 60 V Collector Base Voltage VC80 80 V fritte r Base Voltage VEBO

Contextual Info: CDIIL BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = QASE

BT2907

Contextual Info: CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g CM BT2907 = 2B CM BT2907A = 2F 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR A B SO L U T E M A X IM U M R A T IN G S

Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00