237 DT 2 Search Results

ETG81-050

Abstract: 1DI400 1DI400D-100 358 ez 802 ETK81-050 1DI300A-120 1DI200Z-100 1D500A-030 ETK85-050 ID200A-020
Contextual Info: - 237 - m±M. -n F — r BO o- _ k' T i =25°C I S f t r t iE ( V ) Ve E ft A V * . be * (A) (A) * * . t,t. ft k ft * m m R.b 0-0 VK (u s ) T (A) (A) (A) CV) I F k (A) (i¿&) M. k 1p V BE di/dt (A) (V) (A/í/s) * k 2.0 2.5 200 4.0 2.0 12 3.0 4.0 -4.0

Contextual Info: 5STF 05T2625 5STF 05T2625 Old part no. TR 907FC-530-26 Medium Frequency Thyristor Properties § Amplifying gate § High operational capability § Optimized turn-on and turn-off parameters § High operating frequency Applications § Power switching applications

Contextual Info: r z 7 S G S -T H O M S O N L ie r a s * ^ 7 #® K S T T B 1 2 0 6 D I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 12A V rrm 600V trr (typ) 50ns V f (max) 1.3V K. FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

PN channel MOSFET 10A

Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
Contextual Info: S G S -T H O M S O N HUSCTIiMOÛS STD20N06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V dss RDS on Id STD20N06 60 V < 0.03 n 20 A (*) . . • . . . . ■ TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

marking rzr

Abstract: 0074B
Contextual Info: SC STH O M SO N STANDARD TRIACS FEATURES = 25A . VDrm = 400V to 800V • High surge current capability ■ It RM S DESCRIPTION T0220 non-insulated (Plastic) The T25xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose switching

BTB04

Abstract: btb04 600 BTA04 T0220AB BT 139 Triac BTB 700
Contextual Info: 7 / BTA04 T/D/S/A BTB04 T/D/S/A SGS-THOMSON H Ü S i[L i S ïï[M iM (g ® SENSITIVE GATE TRIACS FEATURES • VERY LOW Iqt = 10mA max ■ LOW Ih = 15mA max ■ BTA Family: INSULATING VOLTAGE = 2500V(RMS (UL RECOGNIZED: E81734) DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high per­

ri33a

Contextual Info: f Z T S G S - T H O M S O N H H O T *i B T A 2 4 B W /C W SNUBBERLESS TRIACS FEATURES • HIGH COMMUTATION : dl/dt c > 22A/ms without snubber ■ HIGH SURGE CURRENT : Itsm = 240A ■ INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION

Contextual Info: SGS-THOMSON M œ m iiê W K S TGDV 606 -> 612 ALTERNISTORS FEATURES • HIGH COMMUTATION : > 213 A/ms 400Hz a2 - - ■ HERMETIC PACKAGE : TO 65 Metal A1 i G ■ HIGH VOLTAGE CAPABILITY : V Dr m = 1200 V A, w DESCRIPTION ° A2 The TG D V 606 — > 612 use a high performance

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

Contextual Info: / = 7 SGS-THOMSON ^ 7 # ® ILiET^OlDGS S25XXXH SCR FEATURES • It rms = 25A - V drm = 200V to 800V ■ High surge current capability DESCRIPTION The S25xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

Contextual Info: rZZ SG S -TH O M S O N ^7# R ILIlOÎIBOlDSS S0402xH SENSITIVE GATE SCR FEATURES • I t r m s = 4A > V drm = 200V to 800V ■ Low Iq t <200 (xA DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose

Contextual Info: ¿ = 7 SGS-THOMSON BTA26 BW/CW SNUBBERLESS TRIACS FEATURES . HIGH COMMUTATION : dl/dt c>22A/ms without snubber . HIGH SURGE CURRENT : Ijsm = 250A • Vqrm UP TO 800V ■ BTA Family: INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED: E81734) DESCRIPTION The BTA26 BW/CW triac family are high perform­

Contextual Info: fZ 7 S G S -T H O M S O N Ä 7 # R K M i r a ï ï M O t g S S T T A 6 0 0 6 T V 1 12 TURBOSW ITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av) 2*30A V rrm 600V trr (typ) 35ns V f (max) 1.5V K2 A2 K1 A1 STTA6006T(V)1

LQ-500

Abstract: SO-110
Contextual Info: 3DE T> m S C S _ 'T'’7.S'\S 7^5^237 ÜD31bôM - T H O M S O N [M Û [î* L [IÛ ÏÏ[F 3 g * S S 6 - B T B 0 6 A W S- THOMSON SNUBBERLESS TRIACS • Itrms = 6 A a t T c = 1 0 0 °C. ■ V drm : 200 V to 800 V. ■ Igt = 75 mA (Ql-ll-lll). ■ GLASS PASSIVATED CHIP.

BYT 77 DIODE

Contextual Info: C T S G S -T H O M S O N * 7 # . HD»[llUi iiD i BYT 08P-200 -»400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS

BTY230

Abstract: BYT230PI
Contextual Info: E i. BYT230PI V -800 BYT231 PI(V)-800 SC S -TH O M S O N M(g^ [lL[i(gTT^(2M S FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 V rms

BYV54V

Abstract: bbT23 BYV541V BYV541V-200 BYV54V-200 BYV54V200 43B diode
Contextual Info: BYV54V BYV541V SG S-THO M SO N ILI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • . ■ ■ . ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED: Insulating voltage = 2500 V rms

Contextual Info: SGS'THOMSON * 7 # . K lD gllS [ilLI«0H @ i B Y T 3 0 P I-2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME Insulating voltage 2500 V rms ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance 15pF

Contextual Info: r Z J SGS-THOMSON T08 A SENSITIVE GATE TRIACS FEATURES • It RMS = 0.8 A ■ Vdrm = 200 V to 600 V ■ Igt ^ 10 mA ABSOLUTE RATINGS (limiting values) Param eter Sym bol IT(RMS) ITSM Value Unit A RMS on-state current ( 360° conduction angle ) Tl= 55°C

Contextual Info: 5bE D • 7= ^ 5 3 7 DDMlflb^ TOb ■SGTH - f Z 7 s g s-THonsoN T -0 3 -/-5 * S C S - T H O M S O N 5 A T# [L gTO@ KS B Y T 1 6 P -2 0 0 A -» 4 0 0 A FAST RECOVERY RECTIFIER DIODES ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING

317 6 terminal diode

Contextual Info: APTM20DUM05 Dual common source MOSFET Power Module VDSS = 200V RDSon = 5mΩ Ω max @ Tj = 25°C ID = 317A @ Tc = 25°C Application • • • AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • • S D2 Benefits

Contextual Info: Æ 7 SGS'THOMSON “ •7/ E u ig fflM » M SS40 THYRISTOR MODULE FEATURES ■ Vdrm = V rrm UP T 0 1400 V ■ It R M S =55A . HIGH SURGE CAPABILITY . INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MSS40 family are constitued of two general

Contextual Info: ¿ = 7 SCS-THOMSON MÊ @i Li(gre(s M i TPDV 640 — > 1240 ALTERNISTORS FEATURES . HIGH COMMUTATION : > 142 A/ms (400Hz) . INSULATING VOLTAGE = 2500V(rm S) (UL RECOGNIZED : EB81734) . HIGH VOLTAGE CAPABILITY: V Drm = 1200 V DESCRIPTION The TPDV 640 —> 1240 use a high performance

T2514

Contextual Info: SGS-THOMSON T2514XKS T2516xKS mi SNUBBERLESS TRIACS FEATURES • I t RMS = 25A ■ HIGH COMMUTATION : (dl/dt)c;> 12A/msT2514xKS S: 22A/ms T2516xKS . INSULATING VOLTAGE =2500V(rms) (UL RECOGNIZED : E81734) DESCRIPTION The T2514/T2516xKS series of isolated triacs