235E Search Results

HRU0302A

Abstract: hru0302 Hitachi DSA00125
Contextual Info: HRU0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-235E Z Rev 5 June 1996 Features • • Low forward voltage drop and suitable for high effifiency forward current. Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed

u0302a

Abstract: RU03
Contextual Info: HRU0302A Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-235E Z Rev 5 June 1996 Features • Low forward voltage drop and suitable for high effifiency forward current. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- ALL RIGHTS RESERVED. D .310 .100 TO FLAT .340 .130 .1 60 A i 130 — -Tr / .380 \J C .020 30 DP.X .040 W KEYWAY .100 40 .030 TYP. .100 .200 0.043 OOTYP.

Contextual Info: '1 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION - - LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS DIST H S E C T IO N A-A DESCRIPTION DWN DATE APVD G EHC0-019 5- 04 12 - 0 5 - 0 4 D vdB H EH1 0 - 0 6 8 0 - 0 5

TMS320C5* multiplication matrix mx

Abstract: HC- 543 functions of ic 4028 simple and sample ascii level language programs TMS320C2XX C Language Tools SPRU014 TMS320 rts50 SPRU072
Contextual Info: TMS320C2x/C2xx/C5x Optimizing C Compiler User’s Guide Literature Number: SPRU024E August 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%555522&5'$E#$E55 $F ED(5 (* 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA.F(.5$F(ED(5)(*55

LTC1962EMS8-2.5

Abstract: LM136-2.5
Contextual Info: 1 1232456773849AB732 4CDE457FC7A45C74334D2F37F4FCB3 5 12 5 4 4 4 5 5 4 5 9AB7324CDE457FC7A41147F4 7A4 4 4 459A#$E%525525&33'5 $E#$E55 $F ED)5*)+ 5 5 5 5 5 5 5 4 567897A94BC76DACEF4 4 15 547864 15 :EFA/F)/5$F)ED)5*)+5-E5*FD";0FED5

C2600R-H

Contextual Info: 23 24 22 21 20 19 18 17 16 15 14 13 12 11 10 _ 9_ \/ 7 8 6 CD M 5 SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON AN INDIVIDUAL COMPONENT DRAWING. DIM LABEL DIMENSION

Contextual Info: r 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR PO RA TE D. ALL FOR PUBLICATION R IG H T S , 19 R ES ER V ED . D PRE-5TAGED CONDITION C A 3 - D I HENS I O N A L NTS AMP • 23-5EP-99 4805 REV 27JUN96 11:40:03 ampi 9538

1110400

Contextual Info: I 8 T H I S DRAWING IS UNPIJRI 1SHPD. _ _ _ •- ' VFRTRAiiLJXHF4n NVpRfTFFFTTTTllCHTF 7F ICHNUNG COPYRIGHT 1994 RE L E A S E D FOR P U B L I C A T I O N FREI FUER VEROEFFENTLI CHUNG BY AMP INCORPORATED. ,19-, ï 6 MATED WITH: PASSEND ZU:

IF9120

Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Contextual Info: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model

IF9120

Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field

sst39vf3201c

Abstract: SST39VF3202C-70-4I-B3KE 3202-c
Contextual Info: 32 Mbit x16 Multi-Purpose Flash Plus SST39VF3201C / SST39VF3202C A Microchip Technology Company Preliminary Specifications The SST39VF3201C and SST39VF3202C devices are 2M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST's proprietary, high performance

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. XpA COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 4 2 3 - LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S CM 52 P LTR N1 RECOMMEND DESCRIPTION DWN APVD BSV DB 27JAN 06 E C O —0 5 —0 1 3 1 0 4 1.57 DIA HOLES EOR SOLDERTAIL TABS.

S-20-97

Contextual Info: 7 THIS JÊL DRAWI NG COPYRIGHT 15 U N P U B L I S H E D . RELEASED 19 BY AMP I N C OR P O R A T E D . ALL FOR P U B L I C A T I O N RIGHTS , 6 5 3 4 2 19 LOC RESERVED. CM DI ST REVISIONS 53 DESCRIPTION B REV DIMENSIONS PER IN EC 0G1B-0094-99 BRACKETS ARE KW

Contextual Info: 7 TH 5 DRAWI NG COPYRIGHT IS UNPUBLISHED. 19 RELEASED BY A MP INCORPORATED. ALL FOR RIC PUBLICATION HTS 6 5 3 4 2 c ,19 LOC RESERVED. DI ST REVISIONS 53 DESCRIPTION C REV DIMENSIONS PER IN EC 0G1B-0094-99 BRACKETS ARE IN KW 2 3-SEP-99 KC INCHES D D \ C

Contextual Info: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S , 6 4 5 3 2 19 L OC R ES ER V ED . DI ST CM REVISIONS 53 DESCRIPTION B 1. REV DIMENSIONS PER IN EC 0G1B-0094-99 BRACKETS A RE

Contextual Info: 6 7 T H I S DRAWING JÊL C OPYRIGHT 15 U N PU B L IS H E D . 19 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. , 4 5 2 3 19 LOC ALL R IG H T S R ES E R V E D . CM D I ST REVISIONS 53 DESCRIPTION B REV PER EC 0 G1 B - 0 0 9 4 - 9 9 DIMENSIONS

Contextual Info: 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. ALL FOR PUBLICATION R IG H T S , 6 5 3 4 2 19 LOC R ES ER V ED . CM DI ST REVISIONS 53 DESCRIPTION B REV DIMENSIONS PER IN EC 0G1B-0094-99 BRACKETS A RE KW

NTC 4,7 Siemens

Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
Contextual Info: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions

Potentiometers

Abstract: Potentiometer Potentiometers GP63
Contextual Info: Potentiometers Ø10.3mm THT Trimming Potentiometers  GP63 Series P.C.B. LAYOUT GP63A1. Right Angle Type Pitch 2.5 mm P.C.B. LAYOUT GP63A2. Right Angle Type Pitch 5 mm P.C.B. LAYOUT GP63H. Straight Type All specifications are restricted to QA test criteria.

Contextual Info: iltritNS A K T I E N 6 E S E L L S C H A F M7E D flB35b05 D G 3 7 5 G 7 E ISIEG % T - fc - ll- C f? SIEMENS % Semicustom ICs SCxE6: »Sea-of-Gates« Gate-Arrays Siem ens announces a sub-m icron generation of channelless gate-arrays based on the proven M egalogic process

RLS135

Abstract: 719d GE185 smd DA RN A223D DA228K
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products • h i h i m s M ■Standard Products, Semi-standard Products, •Please note the following when placing an order. To m ake it easier for customers to select the most suitable product for

CSBLA614KJ58

Abstract: NX3225da CSTLA4M00G55-B0 CSTCV12M0T54J-R0 CSTCV11M0T54J-R0 CSBLA400KJ5E-B0
Contextual Info: SECTION INDEX CERAMIC RESONATORS Boxed, 2 Pin . . . . . . . . . . . . . . . . . . . . . . . . . 229 Dipped, 2 Pin . . . . . . . . . . . . . . . . . . . . . . . . 230 Surface Mount, 2 Terminal . . . . . . . . . . . . . 231-232 Dipped, 3 Pin . . . . . . . . . . . . . . . . . . . . . . . . 233