23456789ABC Search Results

0F21

Abstract: 88DE
Contextual Info: 1 23456789ABCDE5FE58C85CE9E 123454678945A6BC E48 1 83369 1 8534369 !354C5E"4 83369C1   1 23456457 1C#694894 C$8538 C%8453EC#&E5E485343 'C#6998465C84E3 C694397    ' 1 83369C1   89AB6CBD6E BA+C

U2401

Abstract: 73e42 D1432 4932 74C22
Contextual Info: 1232456773489A4B1CDEF4 23456789ABCDE1 1 F2F1171CF411A3231212F1A141 311C324 4 4 E !"1 C! * &14 +!#1 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 14 4 174439445 !49"74#7$74 2374#74%744394&D4'474$62(7%4

63A36

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 23456789ABCCCDEFEECD C CCCCCCCCCCC C CCCCCCCC C C EC EFC3C !C5""# 123456 +/A*03A+*/1 23467891 13 1BDE1

Contextual Info: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 23456789ABCDC1EFF3A41   1111 !" "12# 123314567891A758BCD814E1F3D167D1F1C5A36 $1%&&'13 1 7 * &+,-./1(7)'1F9%2A019'11 &+,"1 " 

Contextual Info: 5mm T-1 3/4 Ambient Light Sensor 1 1 1 1 1 1 1 1 23456789ABC5CD1 1 1 1 Features ‧Excellent IR-Cut performance ‧Close responsively to the human eye spectrum ‧Light to Current, analog output ‧Good output linearity across wide illumination range ‧Low sensitivity variation across various light sources

Contextual Info: 12341567689A58BC4DE5 1 5 EC9F3FF512E568958E9FA55 B1FC4A5539F8512355 55 5 1 1 23456789ABCDCEFE 5 5 2 1 1 1 1 1 1 1 1 

667 ecb

Abstract: verilog code for implementation of des verilog code for des tsmc sram
Contextual Info: FIPS 46-3 Standard Compliant Encryption/Decryption performed in 48 cycles ECB mode DES3 Up to 168 bits of security Triple Data Encryption Standard Core Verilog IP Core The DES3 core implements the Triple Data Encryption Standard (DES3) documented in the U.S. Government publication FIPS 46-3.

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4

A1833

Contextual Info: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4

Contextual Info: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07

MT46H64M16

Abstract: 6S55 MT46H64M16LF
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

s11 stopping compound

Abstract: DEF01
Contextual Info: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double

circuit diagram of ddr ram

Abstract: HYB18M1G320BF
Contextual Info: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00

ELPIDA lpddr

Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double

lg crt monitor circuit diagram

Abstract: LBIT 204 NS32081 NS32CG160 barrel shifter block diagram VCT 492 x LM 3558 symbol
Contextual Info: NOV 1 1 1991 PRELIMINARY July 1991 NS32CG160-15/NS32CG160-20/NSC32CG160-25 32-Bit Integrated System Processor General Description Features The N S32C G 160 is a highly-integrated m em ber of th e Se­ ries 3 2 0 0 0 /E P tm fam ily o f N atio n a l's Em bedded System

Contextual Info: Preliminary‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Am29BDD160GB64C

Contextual Info: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

am29f date code markings

Abstract: am29lv date code markings Am29BDD160GB64C
Contextual Info: ADVANCED INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: 512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

T67M

Abstract: ELPIDA mobile dram LPDDR2
Contextual Info: 512Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double