2314 MOSFET Search Results

IRFD110

Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
Contextual Info: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

2314 sot-23

Abstract: 2314 mosfet APM2314A STD-020C T-23 APM2314 m14x
Contextual Info: APM2314A N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/2.8A , D RDS ON =45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • • • G Super High Dense Cell Design S Reliable and Rugged Top View of SOT-23 Lead Free Available (RoHS Compliant)

Mosfet

Abstract: SSF2314
Contextual Info: SSF2314 20V N-Channel MOSFET D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application.

2314 sot-23

Abstract: 2314 mosfet ANPEC A102 APM2314 J-STD-020A
Contextual Info: APM2314 N-Channel Enhancement Mode MOSFET Features • Pin Description D 20V/2.8A , RDS ON =45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged G SOT-23 Package S Top View of SOT-23

VK200 INDUCTOR

Abstract: inductor vk200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

UFN742

Abstract: N-Channel mosfet 400v to220 2314Y UFN741
Contextual Info: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

90G001

Abstract: omap 4460
Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

CSD17559Q5

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

Contextual Info: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd

g598

Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Contextual Info: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International

TEA5712T

Abstract: dts circuit board
Contextual Info: Product specification Philips Semiconductors TEA5712; TEA5712T AM/FM stereo DTS radio circuit • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM

variable coils toko s18

Abstract: murata cda murata sfe FMRF dts circuit board
Contextual Info: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM

TEA5712

Abstract: dts circuit board variable capacitors am/fm FM radio CIRcuit DIAGRAM ift variable for radio FM stereo MPX Decoder A2701 AM FM radio CDA 10.7 MC 40 Pin diode G4S
Contextual Info: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Designed for simple and reliable printed-circuit board layout • Low current consumption: 16 mA at AM, 17 mA at FM

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

593D

Abstract: HIP6028 HIP6028CB HIP6028EVAL1 ATI 2313 AN9833
Contextual Info: HIP6028 Data Sheet May 1998 Advanced PWM and Dual Linear Power Control with Integrated ACPI Support Interface The HIP6028 provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM

Contextual Info: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~

R5F61663N50FPV

Abstract: R5F61668RN50FPV HD64F2378RVFQ HD64F2378BVFQ R4F2117LP hd64p2128ps 3 phase dc converter afe circuit diagram igbt R5S61651CN50FPV R5F61657CN35FTV H8S/2116
Contextual Info: 2008.03 Renesas MCUs H8S Family H8SX Family www.renesas.com Learn why Renesas MCUs are preferred. Speedy + Standard + Special + Select + Safety Inheriting the world-renowned H8 architecture, and evolving it even further. This 16-bit/32-bit CISC architecture creates

RM35JA32

Abstract: Square D Relay Class 8501 Type X 4 Pole CA2-KN22 PLC Ladder diagram in Soft Drink Vending Machine schneider sr2b121bd CA2KN22 ZELIO RM35JA32MW RE48A RSZE-1S48M CA2KN31
Contextual Info: Table of Contents Section 23 Relays and Timers General Purpose Relays New! RXM, p. 23-6 RSL, p. 23-45 Zelio Plug-in Relays Square D® Plug-in Square D® Alternating Plug-in Square D® Miniature Plug-in Square D® Sockets Square D® Power 23-2 23-9 23-10

car Speed Sensor

Abstract: 3 phase dc converter afe circuit diagram igbt LQFP1414-120 yokogawa 2655 LEARN ELECTRONIC ECU CAR BLOCK HD64F2639F AIRBAG EMULATION RESISTORS HD64F2378RVFQ R5F61663N50FPV 2314F
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LP 1610

Abstract: SCHEMATIC VGA board
Contextual Info: LH7A400 User’s Guide 2007 August 27 Content Revisions This document contains the following changes to content, causing it to differ from previous versions. Minor typographical changes, where they do not affect content, are not tracked here. Record of Revisions

Contextual Info: IMPORTANT NOTICE Dear customer, As from June 1st, 2007 NXP Semiconductors has acquired the LH7xxx ARM Microcontrollers from Sharp Microelectronics. The following changes are applicable to the attached data sheet. In data sheets where the previous Sharp or Sharp Corporation references remain, please use the new