2310 TRANSISTOR Search Results

transistor prc 406

Abstract: molex junction box TX-508 YAGEO TYPE CR25
Contextual Info: 300 MHz to 2310 MHz I/Q Modulator with Integrated Fractional-N PLL and VCO Preliminary Technical Data ADRF6755 FEATURES GENERAL DESCRIPTION I/Q modulator with integrated fractional-N PLL and VCO Gain control span: 47 dB in 1 dB steps Output frequency range: 300 MHz to 2310 MHz

Contextual Info: 300 MHz to 2310 MHz I/Q Modulator with Integrated Fractional-N PLL and VCO Preliminary Technical Data ADRF6755 FEATURES GENERAL DESCRIPTION I/Q modulator with integrated fractional-N PLL and VCO Gain control span: 47 dB in 1 dB steps Output frequency range: 300 MHz to 2310 MHz

relay finder 45.61

Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
Contextual Info: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

NIPPON CAPACITORS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies

j686

Abstract: FERRITE BEAD 1000 OHM 0805 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S231100H Rev. 0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 456 mhz Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to

nippon capacitors

Abstract: MRF6S23140H j727
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

J673

Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to

nippon capacitors

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies

seagate hard drive CIRCUIT diagram

Abstract: SIS M661MX sis 302elv M661MX lcd acer monitor circuit diagram 952023CG acer adapter circuit diagram PA-1650-02 TS-L532A NS0013
Contextual Info: Chapter 1 System Introduction Features This computer was designed with the user in mind. Here are just a few of its many features: Platform T Intel Celeron® M 350/360/370 processor 512 KB L2 cache, 1.3/1.4/1.5 GHz, 400 MHz FSB T Intel® Pentium® M 715 processor (2MB L2 Cache, 1.5 GHz, 400 MHz FSB)

CRC120610R0FKEA

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

250GX-0300-55-22

Abstract: AN1955 JESD22-A114 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to

ldr 10k

Abstract: LDR 24v LDR 20K ldr 100k ldr datasheet ldr resistor 1SS250 CF8140A SM8140A SM8140AM
Contextual Info: DISCONTINUED PRODUCT SM8140A EL Driver IC NIPPON PRECISION CIRCUITS INC. OVERVIEW PIN OUT The SM8140A is designed for using as EL Electronic Luminescence sheet driver require very low external parts counts, this result that very compact and thin EL driver units can be made.

465B

Abstract: A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3 J733
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to

ldr 10k

Abstract: 3 pins LDR ldr datasheet LDR 03 ldr resistor 3 pins LDR Datasheet Circuit diagram of LDR LDR 20K ldr block diagram simple data sheet ldr
Contextual Info: SM8140A EL Driver IC NIPPON PRECISION CIRCUITS INC. OVERVIEW PIN OUT The SM8140A is designed for using as EL Electronic Luminescence sheet driver require very low external parts counts, this result that very compact and thin EL driver units can be made.

TIC 2460

Abstract: bts 2140 S11 zener diode ALM-31222 tic 2160 tic 2360 Avago MGA-30216 app note 2305 transistor BTS 3900 a BTS 3900
Contextual Info: ALM-31222 1Watt, 1.7GHz to 2.7GHz Driver Amplifier Design for Base Transceiver Station Application Application Note 5388 Introduction Avago Technologies ALM-31222 is a high linearity 1W Power Amplifier PA with good OIP3 and PAE at 1dB GainCompression point, are designed to operate from 1.7GHz

Z9982

Abstract: bux14
Contextual Info: BUX14 File N um ber Silicon N-P-N Switching Transistor 1203 TERM INAL DESIGNATIONS c FLANGE For High-Voltage Switching and Amplifier Applications in Industrial and Commercial Equipment Features: • Vceo - 400V m l cc — 10 A m P T - 150 W POWER TRANSISTORS

Contextual Info: BUX14 HARRIS SEMICOND SECTOR 1203 43GEE71 DOHOTET 3RE * H A S File Number SbE » 7 Silicon N-P-N Switching Transistor TERMINAL DESIGNATIONS C E For High-Voltage Switching and Amplifier Applications in Industrial and Commercial Equipment FLAN G E Features:

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218