230V NPN 1A Search Results

2SC6141

Abstract: a1288 2SA222 2SA2221 2SC614 2SA22 A1288-1 230v to 5v dc circuit diagrams
Contextual Info: 2SA2221/2SC6141 Ordering number : ENA1288 SANYO Semiconductors DATA SHEET 2SA2221/2SC6141 Applications • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications 230V / 15A, AF100W output applications.

Contextual Info: NTE2648 Silicon NPN Transistor General Purpose Amp Features: D High Transition Frequency Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V

NTE2647

Abstract: NTE2648 NTE2747 NTE2748 230V npn 1A 20W
Contextual Info: NTE2647 PNP & NTE2648 (NPN) Silicon Complementary Transistors General Purpose Amp Features: D High Transition Frequency Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V

NPN Transistor 2sc5242

Abstract: transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION •High Collector Breakdown Voltage: V BR CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications

power amplifier 2sc5200 2sa1943 TRANSISTOR

Abstract: transistor 2sc5200 2sC5200, 2SA1943 transistor npn 100w amplifier 2sc5200 transistor 2sc5200 amplifier circuit 2SC5200 2sa1943 transistor 2SC5200 2sc5200 amplifier DATA SHEET TRANSISTOR 2SC5200
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS

2SC5242

Abstract: 2SA1962 230V npn 1A
Contextual Info: SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity

2SC5669

Abstract: AF100W 2SA20 2SA2031 D1503 2SA203
Contextual Info: 2SA2031 / 2SC5669 Ordering number : ENN6586A 2SA2031 / 2SC5669 Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications Large current capacitance. Wide ASO and high durability against breakdown.

KTA1962

Abstract: KTC5242
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC5242 TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Breakdown Voltage : VcEO=230V Min. • Complementary to KTA1962. • Recommended for 80W High Fidelity Audio Frequency

schematic diagram AUDIO power amplifier

Abstract: 2STC5200
Contextual Info: 2STC5200 High Power NPN epitaxial planar bipolar transistor PRELIMINARY DATA Features • High breakdown voltage VCEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching speed ■ Typical fT= 30MHz ■ In compliance with the 2002/93/EC European directive

2SA2031

Abstract: 2SC5669 65863 AF100W IC3100
Contextual Info: Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features • • • Package Dimensions Large current capacitance. Wide ASO and high durability against breakdown.

NTE2654

Contextual Info: NTE2654 Silicon NPN Transistor Audio Power Amp Output Features: D High Collector Breakdown Voltage D Suitable for use in 80W High Fidelity Audio Amplifier Output Stage Absolute Maximum Ratings: TC = +25°C unles otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V

NPN Transistor 2sc5242

Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: 2-21F1A 2SA1987 2SC5359 tr 2sA1987
Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 53.3 ±0.2 20.5MAX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

transistor 2SC5359

Abstract: tr 2sA1987 2SC5359 power amplifier 2sc5359 2sa1987 TRANSISTOR 2-21F1A 2SA1987 2SA1987 2SC5359
Contextual Info: TO SH IBA 2SC5359 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5359 Unit in mm 20.5M AX. • • • High Collector Voltage : VCEO- 230V Min. Complementary to 2SA1987 Recommend for 100W High Fidelity Audio Frequency Amplifier

KTC5242A

Abstract: KTA1962A
Contextual Info: SEMICONDUCTOR KTC5242A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

Contextual Info: SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E ・High Collector Voltage : VCEO=230V Min. C ・Complementary to KTA1962. J H ・Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

Contextual Info: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

Contextual Info: SEMICONDUCTOR KTC5242A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. Q B K F A I FEATURES E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962A. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

KSC5242

Abstract: KSA1962
Contextual Info: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

KSA1962

Abstract: KSC5242
Contextual Info: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=10A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

Contextual Info: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=15A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 1 1.Base TO-3P 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

KTA1962

Abstract: KTC5242 CE1210
Contextual Info: SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q K I F FEATURES B E High Collector Voltage : VCEO=230V Min. C Complementary to KTA1962. J H Recommended for 80W High Fidelity Audio Frequency G Amplifier Output Stage.

Contextual Info: KSC5242 KSC5242 Audio Power Amplifier • • • • • High Current Capability : IC=10A High Collector Breakdown Voltage : VCEO=230V Min. High Power Dissipation Wide S.O.A Complement to KSA1962 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.