230P Search Results

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

Contextual Info: c* SY10EL01 SY100EL01 4-INPUT OR/NOR SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • 230ps propagation delay The SY10/100EL01 are 4-input OR/NOR gates. These devices are functionally equivalent to the E101 devices, with higher performance capabilities. With propagation

RJ11 plug dimension

Abstract: excelsus z-230pj Z-230PJ EX110 Pots schematic VOICE RECORDER schematic
Contextual Info: Z-BLOCKER Z-230PJ xDSL over POTS In-Line Filter Description The Z-230PJ is a small in-line filter designed to expedite the service delivery and improve the performance of digital subscriber line DSL and home phoneline network (HPN) services. This model filters all telephone sets, facsimile machines,

100EL01

Abstract: SY100EL01 SY100EL01ZC SY10EL01 SY10EL01ZC SY10EL01ZCTR
Contextual Info: 4-INPUT OR/NOR FEATURES • ■ ■ ■ SY10EL01 SY100EL01 DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These devices are functionally equivalent to the E101 devices,

1800 ldmos

Abstract: SOT539A
Contextual Info: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

SY10EP01V

Abstract: SY10EP01VKC SY10EP01VKCTR SY10EP01VZC SY10EP01VZCTR
Contextual Info: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ PRELIMINARY SY10EP01V DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open

Contextual Info: « SY10EL58 SY100EL58 2:1 MULTIPLEXER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 230ps propagation delay The S Y 1 0 /1 0 0 E L 5 8 are 2:1 m u ltip le xe rs. T hese devices are functionally equivalent to the E158 devices, with higher perform ance capabilities. W ith propagation

Contextual Info: *SYNERGY PRELIMINARY SY10EL58 SY100EL58 2:1 MULTIPLEXER SEMICONDUCTOR FEATURES DESCRIPTION 230ps propagation delay The SY10EL/100EL58 are 2:1 multiplexers. These devices are functionally equivalent to the E158 devices, with higher performance capabilities. With propagation

Contextual Info: 230ps propagation delay High bandwidth output transitions internal 75Kii input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package PIN CONFIGURATION/BLOCK DiAGRAM The SY10/100EL01 are 4-input OR/NOR gates. These devices are functionally equivalent to the E101 devices,

BLF6G20(S)-45

Contextual Info: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

Contextual Info: • ■ ■ ■ ■ 230ps propagation delay High bandwidth output transitions Internal 75KÎ 2 input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The SY10/100EL58 are 2:1 m ultiplexers. These devices are functionally equivalent to the E158 devices,

230P

Abstract: 1M-04 2s-20
Contextual Info: V C C 3 _A U X O - Ul PW RSW 16 32 O F F # CAPS# S C R O L L# CDACT# LID #_ BROW SER# E§ — Jfi P O W E R SW IT C H & LE D _C O N 04 Z O IO fr; 1M 1PI COVER C LO SE INTMIC - O VC C 3 _A U X & C101 I/2 2 0 P INTMICJjND C11 I I / 230P~OP 1IC_CO v Modify2

Contextual Info: * SY10EL01 SY100EL01 4-INPUT OR/NOR SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 230ps propagation delay High bandwidth output transitions Internal 75KÎ2 input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These

AZ100EL58

Abstract: AZ100EL58D AZ100EL58DR1 AZ100EL58DR2 AZ10EL58 AZ10EL58D AZ10EL58DR1 AZ10EL58DR2 AZ10EL58T MC100EL58
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL58 AZ100EL58 ECL/PECL 2:1 Multiplexer FEATURES PACKAGE AVAILABILITY • • • • 230ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL58 & MC100EL58

Contextual Info: vkiyjxuM 19-0154: Rev 1:3/9 6 N o n v o l a t i l e RAM C o n t r o l l e r _ A p p l i c a t i o n s Systems Features ♦ Battery Ba c ku p ♦ M e m o ry Write Protection ♦ 230pA O p e ra tin g -M o d e Q u ie s c e n t C u r re n t

E158

Abstract: SY100EL58 SY100EL58ZC SY10EL58 SY10EL58ZC
Contextual Info: *SYNERGY PRELIMINARY SY10EL58 SY100EL58 2:1 MULTIPLEXER SEM ICONDUCTOR FEATURES DESCRIPTION 230ps propagation delay High bandwidth output transitions The SY10EL/100EL58 are 2:1 multiplexers. These devices are functionally equivalent to the E158 devices, with higher performance capabilities. With propagation

SY100EL01

Abstract: SY100EL01ZC SY100EL01ZCTR SY10EL01 SY10EL01ZC SY10EL01ZCTR
Contextual Info: SY10EL01 SY100EL01 4-IN P U T O R/NO R SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION 230ps propagation delay The SY10/100EL01 are 4-input O R/NO R gates. These devices are fu n ction a lly equivalent to the E101 devices, w ith higher perform ance capabilities. W ith propagation

Contextual Info: #TDG_4_ElectronicFuse.fm Page 9 Sunday, July 31, 2005 8:33 AM 229P / 230P Series 2AG Slo-Blo Fuse RoHS Pb UL ¨ ¨ The fuses combine conventional overcurrent protection with the ability to withstand high-current, short-duration pulses. They meet demanding

E158

Abstract: SY100EL58 SY100EL58ZC SY10EL58 SY10EL58ZC SY10EL58ZCTR
Contextual Info: SY10EL58 SY100EL58 FINAL 2:1 MULTIPLEXER FEATURES • ■ ■ ■ DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL58 are 2:1 multiplexers. These devices

K4201

Contextual Info: 3.3V/5V PECL/ECL 3GHz DUAL DIFFERENTIAL 2:1 MULTIPLEXER SY100EP56V FINAL FEATURES • Dual, fully differential 2:1 PECL/ECL multiplexer ■ Guaranteed AC parameters over temperature/ voltage: • > 3GHz fMAX toggle • < 100ps within device skew • < 230ps rise/fall times

Contextual Info: Casing Type Metal box LF Series Screw Terminal Type Model Rated voltage AC/DC V Rated current AC/DC (A) LF-220 LF-230 LF-230FU LF-220N LF-220P LF-230N LF-230P 250 250 250 250 250 250 250 20 30 30 20 20 30 30 TÜV Rheinland Withstanding Insulation resistance Leakage

AZ100EL01

Abstract: AZ100EL01D AZ100EL01T AZ10EL01 AZ10EL01D AZ10EL01T AZTEL01 MC100EL01 MC10EL01
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL01 AZ100EL01 ECL/PECL 4-Input OR/NOR FEATURES • • • • PACKAGE AVAILABILITY 230ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL01 & MC100EL01

Contextual Info: *SYNERGY SY10EL58 SY100EL58 2:1 M U L T I P L E X E R SEMICONDUCTOR FEATURES DESCRIPTION • 230ps propagation delay T h e S Y 1 0 /1 0 0 E L 5 8 are 2:1 m u ltip le x e rs . T he se devices are fu n ction a lly eq u iva le nt to the E158 devices, w ith higher perform ance ca p a bilitie s. W ith propagation

TC180G21

Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­