230PS Search Results

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

Contextual Info: c* SY10EL01 SY100EL01 4-INPUT OR/NOR SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • 230ps propagation delay The SY10/100EL01 are 4-input OR/NOR gates. These devices are functionally equivalent to the E101 devices, with higher performance capabilities. With propagation

100EL01

Abstract: SY100EL01 SY100EL01ZC SY10EL01 SY10EL01ZC SY10EL01ZCTR
Contextual Info: 4-INPUT OR/NOR FEATURES • ■ ■ ■ SY10EL01 SY100EL01 DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These devices are functionally equivalent to the E101 devices,

SY10EP01V

Abstract: SY10EP01VKC SY10EP01VKCTR SY10EP01VZC SY10EP01VZCTR
Contextual Info: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ PRELIMINARY SY10EP01V DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open

Contextual Info: « SY10EL58 SY100EL58 2:1 MULTIPLEXER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 230ps propagation delay The S Y 1 0 /1 0 0 E L 5 8 are 2:1 m u ltip le xe rs. T hese devices are functionally equivalent to the E158 devices, with higher perform ance capabilities. W ith propagation

Contextual Info: *SYNERGY PRELIMINARY SY10EL58 SY100EL58 2:1 MULTIPLEXER SEMICONDUCTOR FEATURES DESCRIPTION 230ps propagation delay The SY10EL/100EL58 are 2:1 multiplexers. These devices are functionally equivalent to the E158 devices, with higher performance capabilities. With propagation

Contextual Info: 230ps propagation delay High bandwidth output transitions internal 75Kii input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package PIN CONFIGURATION/BLOCK DiAGRAM The SY10/100EL01 are 4-input OR/NOR gates. These devices are functionally equivalent to the E101 devices,

Contextual Info: • ■ ■ ■ ■ 230ps propagation delay High bandwidth output transitions Internal 75KÎ 2 input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The SY10/100EL58 are 2:1 m ultiplexers. These devices are functionally equivalent to the E158 devices,

Contextual Info: * SY10EL01 SY100EL01 4-INPUT OR/NOR SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 230ps propagation delay High bandwidth output transitions Internal 75KÎ2 input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These

AZ100EL58

Abstract: AZ100EL58D AZ100EL58DR1 AZ100EL58DR2 AZ10EL58 AZ10EL58D AZ10EL58DR1 AZ10EL58DR2 AZ10EL58T MC100EL58
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL58 AZ100EL58 ECL/PECL 2:1 Multiplexer FEATURES PACKAGE AVAILABILITY • • • • 230ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL58 & MC100EL58

HEL58

Abstract: SY10EL58ZG E158 SY100EL58 SY100EL58ZC SY100EL58ZCTR SY10EL58 SY10EL58ZC SY10EL58ZCTR XEL58
Contextual Info: Micrel, Inc. 2:1 MULTIPLEXER FEATURES • ■ ■ ■ SY10EL58 SY100EL58 SY10EL58 SY100EL58 DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL58 are 2:1 multiplexers. These devices

E158

Abstract: SY100EL58 SY100EL58ZC SY10EL58 SY10EL58ZC
Contextual Info: *SYNERGY PRELIMINARY SY10EL58 SY100EL58 2:1 MULTIPLEXER SEM ICONDUCTOR FEATURES DESCRIPTION 230ps propagation delay High bandwidth output transitions The SY10EL/100EL58 are 2:1 multiplexers. These devices are functionally equivalent to the E158 devices, with higher performance capabilities. With propagation

SY100EL01

Abstract: SY100EL01ZC SY100EL01ZCTR SY10EL01 SY10EL01ZC SY10EL01ZCTR
Contextual Info: SY10EL01 SY100EL01 4-IN P U T O R/NO R SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION 230ps propagation delay The SY10/100EL01 are 4-input O R/NO R gates. These devices are fu n ction a lly equivalent to the E101 devices, w ith higher perform ance capabilities. W ith propagation

E158

Abstract: SY100EL58 SY100EL58ZC SY10EL58 SY10EL58ZC SY10EL58ZCTR
Contextual Info: SY10EL58 SY100EL58 FINAL 2:1 MULTIPLEXER FEATURES • ■ ■ ■ DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL58 are 2:1 multiplexers. These devices

AZ100EL01

Abstract: AZ100EL01D AZ100EL01T AZ10EL01 AZ10EL01D AZ10EL01T AZTEL01 MC100EL01 MC10EL01
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL01 AZ100EL01 ECL/PECL 4-Input OR/NOR FEATURES • • • • PACKAGE AVAILABILITY 230ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL01 & MC100EL01

Contextual Info: *SYNERGY SY10EL58 SY100EL58 2:1 M U L T I P L E X E R SEMICONDUCTOR FEATURES DESCRIPTION • 230ps propagation delay T h e S Y 1 0 /1 0 0 E L 5 8 are 2:1 m u ltip le x e rs . T he se devices are fu n ction a lly eq u iva le nt to the E158 devices, w ith higher perform ance ca p a bilitie s. W ith propagation

TC180G21

Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

TC180G21

Abstract: TC180G TC160G single port RAM TC180 0724 XBRL16 toshiba ASIC
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3.3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

Contextual Info: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ PRELIMINARY SY10EP01V DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz. 75kΩ internal input pulldown resistors Q output will default LOW with inputs open

HEL01

Abstract: XEL01 SY100EL01 SY100EL01ZC SY100EL01ZCTR SY10EL01 SY10EL01ZC SY10EL01ZCTR
Contextual Info: Micrel, Inc. 4-INPUT OR/NOR FEATURES • ■ ■ ■ SY10EL01 SY100EL01 SY10EL01 SY100EL01 DESCRIPTION 230ps propagation delay High bandwidth output transitions Internal 75KΩ input pull-down resistors Available in 8-pin SOIC package The SY10/100EL01 are 4-input OR/NOR gates. These

Contextual Info: ECL Pro ECLSY10EP01V Pro™ SY10EP01V FINAL 5V/3.3V 4-INPUT OR/NOR Micrel FEATURES • ■ ■ ■ ■ ■ 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open

TOSHIBA GATE ARRAY

Abstract: TC183e Rambus ASIC Cell tc183
Contextual Info: TOSHIBA TC183G/E CMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3.3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the pow er savings of a 3V core

SY10EP01VZCTR

Abstract: SY10EP01V SY10EP01VKC SY10EP01VKCTR SY10EP01VZC
Contextual Info: 5V/3.3V 4-INPUT OR/NOR FEATURES • ■ ■ ■ ■ ■ SY10EP01V FINAL DESCRIPTION 3.3V and 5V power supply options 230ps typical propagation delay High bandwidth to 3GHz 75kΩ internal input pulldown resistors Q output will default LOW with inputs open

Contextual Info: * SY10EL58 SY100EL58 2:1 MULTIPLEXER SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES 230ps propagation delay The S Y 1 0 /1 0 0 E L 5 8 are 2:1 m u ltip le xe rs. T hese devices are functionally equivalent to the E158 devices, with higher perform ance capabilities. W ith propagation