23 505 TRANSISTOR Search Results

Q62702-C2354

Abstract: 505 transistor XWs transistor
Contextual Info: BCR 505 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=10kΩ Type Marking Ordering Code Pin Configuration BCR 505 XWs 1=B Q62702-C2354 Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: STETCO INC 43E D •I 01,51425 □ □ □ 3 23 3 505 ■ STCO LED O N A CERAMIC SUBSTRATE . MAY BE ATTACHED BY ALL CUSTOMARY TECHNIQUES’ CONDUCTIVE EPOXY, R ER O W SOLDERING, VAPOR PHASE, A N D WAVE SOLDERING. ’ CATHODE FOR ALL EXCEPT: A NO DE FOR CRIOSR, COLLECTOR FOR CRIOTE.

varistor 511K

Contextual Info:  Data Sheet Customer： Product : Metal Oxide Varistor - VD Series Size: 05 / 07 / 10 / 14 / 20 Issued Date: 14-Feb-12 Edition : REV.A1 VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司

2SB1166

Abstract: 2SD1723 d1723
Contextual Info: O rdering num ber: EN2021A SANYO » li 2SB1166/2SD1723 N 0 .2 0 2 1 A PNP/NPN Epitaxial Planar Silicon Transistors 50V/8A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage

NI00

Contextual Info: • 4flS5452 001bl4fl 2b^ ■ INR Insulated Gate Bipolar Transistor other Products From IR r INTERNATIONAL RECTIFIER bSE D Fast-Speed IGBT Modules Part Num ber B V C ES Collector to Em itter Breakdown Voltage V IR G T I0 6 5 F 0 6 IR G T I1 2 0 F 0 6 IR G T I1 6 5 F 0 6

tf5r21zz

Contextual Info: Audio I DO-T Transistor Transformers L o c a t in g L in e Type No. M IL P a rt N o . 1 D 0 -T 4 4 M 2 7 /1 7 2 01 ? D O -T 2 9 M 2 7 /1 7 2 - 0 2 3 D 0 -T 1 2 4 D 0 -T 1 3 P r l. Im p . O 8 0 CT UNIT LOCATION KEY Located Type No. on Line D O -T 1 D O -T 2

Contextual Info: 19-0021; Rev 2; 1/94 >i/i>jxiyi/i Quad 8-B it DACs w ith Rail-to-R ail Voltage Outputs _ F e a tu re s ♦ ♦ ♦ ♦ Operate from Single +5V Supply or Dual ±5V Supplies Output Buffer Amplifiers Swing Rail-to-Rail Reference Input Range Includes Both Supply Rails

Contextual Info: MAXIM INTEGRATED PRODUCTS b4E » • SfiTbhSl D D G Û 4 7 3 bTQ ■ MXM 1 9-0021; R e v 1; 4 /9 3 / i / i y j x i y u i Quad 8-B it DACs w ith R ail to-R ail Voitage O utputs _ Features The MAX505 and MAX506 are CMOS, quad, 8-bit voltageoutput digital-to-analog converters DACs . The parts

diode t25 4 HO

Contextual Info: 3GE 1 ' D • 7 ^ 2 3 7 OOB'Hö? SCS-THO M SO N ;ILII gW BB(Si b ■ s6 SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP358 • • • • Voss 50 V ^ D S (o n 0.3 n 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING

Contextual Info: Ordering number: EN 1857B 2SA 1438 N 0.1857B I PN P Epitaxial P lanar Silicon Transistor SA I YO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: 19-0021; Rev 1:4/93 / i / i / j x i y i / i The MAX505 and MAX506 are CMOS, quad, 8-bit voltageoutput digital-to-analog converters DACs . The parts operate with a single +5V supply or dual ±5V supplies. Internal, precision output buffers swing rail-to-rall. The

TU 55x

Contextual Info: G 7. SGS'THOMSON SD1563 RiilO iS lilL§ TIM!ID©i RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ 1O^SEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250|iSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

TNR9G471K

Abstract: TNR G Series TNR23G471K tnr15g621 TNR15G241K
Contextual Info: MARCON AMERICA CORP ESE D • 5763311 0000713 6 ■ METAL OXIDE VARISTORS T '-ll-JL S- TNR Marcon TN R Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

MAX505-MAX506

Contextual Info: /l/l/JX I/l/l 19-0021; RevO; 6/92 Q uad 8-B it DACs w ith R ail-to-R ail Voltage Outputs _ Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Offset, gain, and linearity are factory calibrated to provide 1LSB total unadjusted error TUE over the full operating

14d 431K varistor

Abstract: 14D 391K 20d 391K varistor 10d 471k 14D 471K 13007D 14D 561K 10d 431K Varistor VARISTOR MVR 431K20D
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

Varistor 7D 471K

Abstract: 14d 431K varistor transistor TPV 3100 14d 151K varistor 10d 471k 431K20D 7d 241k 14n 221k VARISTOR MVR 14D 391K
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

cd40107be

Abstract: texas instruments transistor manual cd40107b
Contextual Info: Data sheet acquired from Harris Semiconductor SCHS098B – Revised April 2002 The CD40107B is a dual 2-input NAND buffer/driver containing two independent 2-input NAND buffers with open-drain single n-channel transistor outputs. This device features a wired-OR capability and high output

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

sot-363 702

Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm